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2013, ISBN 9787553801216, 1 v.
Book
Journal of Luminescence, ISSN 0022-2313, 06/2019, Volume 210, pp. 169 - 174
Radiation effects of 10 MeV electrons on blue-lighting InGaN/GaN multiple quantum wells (MQWs) and ultraviolet-lighting GaN/AlGaN MQWs were investigated and... 
Radiation effect | Exciton localization energy | GaN/AlGaN | Non-radiation recombination centers | InGaN/GaN | Internal quantum efficiency | PHOTOLUMINESCENCE | OPTICS | Comparative analysis | Hardness | Quantum wells | Electrons
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 03/2018, Volume 51, Issue 16, p. 163001
Gallium nitride 9GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based... 
GaN-on-Si | power circuits | GaN | PHYSICS, APPLIED | FIELD | MODE | GATE | BREAKDOWN VOLTAGE | TRANSISTORS | ALGAN/GAN HEMTS | SUBSTRATE | MIS | THRESHOLD VOLTAGE
Journal Article
1975, Tai 1 ban., Zhongguo fang zhi cong shu. Hua zhong di fang, Volume di 282 hao, 6 v. (2112 p.)
Book
2002, Di 1 ban., ISBN 9787105048434, 3, 4, 313
Book
2000, Beijing di 1 ban., Gao liang qiang cong shu, ISBN 7506318318, 3, 349
Book
Journal of Alloys and Compounds, ISSN 0925-8388, 10/2019, Volume 804, pp. 435 - 440
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 11/2011, Volume 50, Issue 11, pp. 110202 - 110202-3
The threshold voltage ($V_{\text{th}}$) instability in GaN-based metal--insulator--semiconductor high-electron mobility transistors (MIS-HEMTs) with 15-nm... 
PHYSICS, APPLIED
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 12, pp. 1497 - 1499
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2018, Volume 113, Issue 23, p. 233502
To mimic selective-area doping, p-GaN was regrown on an etched GaN surface on GaN substrates by metalorganic chemical vapor deposition. Vertical GaN-on-GaN p-n... 
YELLOW LUMINESCENCE | DOPED GAN | PHYSICS, APPLIED | DISLOCATION | ENGINEERING
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 04/2010, Volume 132, Issue 13, pp. 4766 - 4771
Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross... 
HETEROJUNCTION | ENERGY | SILICON NANOWIRES | GROWTH | DRIVEN | CHEMISTRY, MULTIDISCIPLINARY | ELECTRICITY | Atomic force microscopy | Usage | Sapphires | Zinc oxide | Chemical properties | Gallium compounds | Electric properties
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2019, Volume 40, Issue 3, pp. 375 - 378
Journal Article
physica status solidi (a), ISSN 1862-6300, 12/2016, Volume 213, Issue 12, pp. 3130 - 3135
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2006, Volume 27, Issue 10, pp. 796 - 798
We report on the demonstration of enhancement-mode n-channel GaN high-voltage MOSFET realized on both p and n-GaN epilayer on sapphire substrates. These... 
MOSFET | Annealing | Dielectric substrates | Gallium nitride | MODFETs | MOSFETs | Fabrication | Silicon carbide | Voltage | HEMTs | Thermal conductivity | Enhancement-mode | high field-effect mobility | High field-effect mobility | MOS CAPACITORS | gallium nitride | enhancement-mode | ENGINEERING, ELECTRICAL & ELECTRONIC | Devices | Direct current | Gallium nitrides | Sapphire | Gates
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 09/2015, Volume 85, pp. 798 - 805
GaN-based LEDs with different thickness of n-GaN have been grown on 4-in. Si(1 1 1) substrate by metal–organic chemical vapor deposition. Quality of GaN... 
XRD | Raman scattering | GaN-LEDs | Strain | HIGH-PERFORMANCE | THIN-FILMS | SAPPHIRE | PHYSICS, CONDENSED MATTER | CHEMICAL-VAPOR-DEPOSITION | BLUE | SILICON | LIGHT-EMITTING DIODES | NITRIDE | HETEROSTRUCTURE | STRESS | Circuit components | Liquors | Light-emitting diodes | Optoelectronics industry | Optical properties
Journal Article
New Journal of Physics, ISSN 1367-2630, 11/2014, Volume 16, Issue 11, p. 113065
The problem of achieving high light extraction efficiency in Al-rich AlxGa\(_{1-x}\)N is of paramount importance for the realization of AlGaN-based deep... 
Spin-orbit coupling | Electronic structure | First-principles calculation | Valence band inversion | Optical property | Electronics | Efficiency | Light
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2014, Volume 104, Issue 21, p. 212101
Journal Article
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