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IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 7, pp. 831 - 833
Journal Article
Nano Letters, ISSN 1530-6984, 08/2013, Volume 13, Issue 8, pp. 3783 - 3790
We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge1-xSnx). We address the challenges in... 
dry etch | Germanium | nanostructure | germanium-tin | direct band gap | selective etch | PHYSICS, CONDENSED MATTER | LOW-TEMPERATURE GROWTH | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | BAND-GAP | LAYERS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2012, Volume 101, Issue 18, p. 182105
We report low resistance Ohmic contacts on n-Ge using a thin ZnO interfacial layer (IL) capped with Ti. A 350 degrees C post metallization anneal is used to... 
PHYSICS, APPLIED | Thin films | Electrical resistivity | Barriers | Titanium | Germanium | Zinc oxide | Conduction band | Current density
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 02/2019, Volume 27, Issue 4, pp. 5798 - 5813
We report high-speed photo detection at two-micron-wavelength achieved by a GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode, exhibiting a 3-dB bandwidth... 
I-N PHOTODETECTOR | LASERS | OPTICS | GERMANIUM-TIN | EFFICIENCY | DARK CURRENT
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 6
The development of a precise micromachining process for Ge1– x Sn x has the potential to enable both the fabrication and optimization of Ge1− x Sn x -based... 
Journal Article
Nano Letters, ISSN 1530-6984, 08/2013, Volume 13, Issue 8, pp. 3783 - 3790-3783-3790
We present a new etch chemistry that enables highly selective dry etching of germanium over its alloy with tin (Ge sub(1-x)Sn sub(x)). We address the... 
Thin films | Synthesis | Semiconductors | Germanium | Etching | Nanostructure | Tin base alloys | Drying
Journal Article
Optics Express, ISSN 1094-4087, 04/2018, Volume 26, Issue 8, pp. 10305 - 10314
We report the first demonstration of high-performance GeSn metal-semiconductor-metal (MSM) photodetector and GeSn p-type fin field-effect transistor (pFinFET)... 
MATRIX | DARK-CURRENT | DETECTOR | SILICON | I-N PHOTODETECTOR | PHOTODIODES | WAVE-GUIDE | OPTICS | LAYER | SI3N4 LINER STRESSOR
Journal Article
Optics Express, ISSN 1094-4087, 06/2018, Volume 26, Issue 13, pp. 17312 - 17320
We report the first experimental demonstration of germanium-tin (GeSn) lateral p-i-n photodetector on a novel GeSn-on-insulator (GeSn01) substrate. The GeSnOI... 
TEMPERATURE | GERMANIUM-TIN | SUPERLATTICES | PASSIVATION | SILICON | GROWTH | OPTICS | MU-M | SUPPRESSION | DARK CURRENT
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2017, Volume 110, Issue 9, p. 91109
We study the effect of surface passivation on pseudomorphic multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors. A combination of ozone oxidation to... 
PHYSICS, APPLIED | Temperature dependence | Bias | Quantum wells | Photometers | Ozone | Passivity | Aluminum oxide | Atomic layer deposition | Dark current | Organic light emitting diodes | Oxidation | Germanium oxides | Activation energy
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2017, Volume 64, Issue 6, pp. 2498 - 2504
The high peak mobility of 509 cm 2 /V · s of the chemical vapor deposition -grown GeSn pMOSFETs is obtained using 1-nm Ge cap. The Ge cap on GeSn can reduce... 
strain | MOSFET | Cap thickness dependent of mobility | Scattering | Logic gates | GeSn | Silicon | Surface roughness | Rough surfaces | Low-frequency noise | low-frequency (LF) noise | PHYSICS, APPLIED | PASSIVATION | SEGREGATION | 1/F NOISE | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | DENSITY | METAL GATE | HOLE MOBILITY | GERMANIUM | LOW-FREQUENCY NOISE | TECHNOLOGY
Journal Article
ECS Transactions, ISSN 1938-5862, 2016, Volume 75, Issue 8, pp. 399 - 406
Conference Proceeding
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, ISSN 2166-2746, 11/2014, Volume 32, Issue 6
The characterization of the optical properties of pseudomorphic Ge1-xSnx/Ge/Si (x = 0 to 0.11) alloys from the IR to UV is presented. The Ge1-xSnx alloys were... 
INTERBAND-TRANSITIONS | CVD | PHYSICS, APPLIED | SEMICONDUCTORS | SILICON | GESN | NANOSCIENCE & NANOTECHNOLOGY | CRITICAL-POINTS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 6, p. 63110
The development of a precise micromachining process for Ge1-xSnx has the potential to enable both the fabrication and optimization of Ge1-xSnx-based devices in... 
IRRADIATION | PHYSICS, APPLIED | CHLORINE ADSORPTION | GERMANIUM | SILICON | FABRICATION | GAAS | Microelectromechanical systems | Control surfaces | Micromachining | Surface properties | Etching | Surface roughness | Sputtering | Photonics
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2013, Volume 34, Issue 7, pp. 831 - 833
Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole... 
Germanium tin (GeSn) | hole mobility | pMOSFET
Journal Article
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