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2014, 2013, ISBN 1461480531, Volume 9781461480549, 265
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory,... 
Electronics & communications engineering | Semiconductors | Chemical vapor deposition | Electrochemistry | Electronics and Microelectronics, Instrumentation | Chemistry | Memory Structures | Energy Technology | Atomic layer deposition
eBook
Reports on Progress in Physics, ISSN 0034-4885, 10/2019
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2007, Volume 91, Issue 1
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 03/2015, Volume 25, Issue 10, pp. 1527 - 1534
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 03/2015, Volume 25, Issue 10, pp. 1527 - 1534
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2014, Volume 104, Issue 7
Journal Article
MRS Bulletin, ISSN 0883-7694, 05/2018, Volume 43, Issue 5, pp. 330 - 333
Journal Article
Nanoscale, ISSN 2040-3364, 01/2018, Volume 10, Issue 2, pp. 716 - 725
Hf1−xZrxO2 (x ∼ 0.5–0.7) has been the leading candidate of ferroelectric materials with a fluorite crystal structure showing highly promising compatibility... 
Grain boundaries | Fluorite | Orthorhombic phase | Semiconductor devices | Phase transformations | Crystallization | Hafnium oxide | Phase transitions | MOS devices | Thin films | Diffraction | Ferroelectricity | Metal oxide semiconductors | Ferroelectric materials | Zirconium dioxide | Crystal structure
Journal Article
Applied Surface Science, ISSN 0169-4332, 01/2020, Volume 501, p. 144280
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2007, Volume 90, Issue 24
Journal Article
Nanoscale, ISSN 2040-3364, 02/2011, Volume 3, Issue 2, pp. 490 - 502
Recent advances in information technology require higher-speed and higher-density memory devices. In the past decade, resistance switching memory has emerged... 
THIN-FILMS | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRICAL-PROPERTIES | NANOSCIENCE & NANOTECHNOLOGY | GE2SB2TE5 | CHEMISTRY, MULTIDISCIPLINARY | ATOMIC-FORCE MICROSCOPY | PHASE-CHANGE MATERIALS | RESISTANCE | FIELD OPTICAL MICROSCOPE | AMORPHOUS TE ALLOYS | CHANGE MEDIA | CURRENT-VOLTAGE CHARACTERISTICS
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Advanced Materials, ISSN 0935-9648, 08/2019, Volume 31, Issue 32, pp. e1805266 - n/a
Journal Article
Nanoscale, ISSN 2040-3364, 10/2019, Volume 11, Issue 41, pp. 19477 - 19487
Ferroelectricity in doped HfO2 thin films has attracted increasing attention since 2011. The origin of the unexpected ferroelectric property is now accepted as... 
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2019, Volume 9, Issue 1, pp. 1 - 9
We theoretically investigate the mechanism of ferroelectric switching via interlayer shear in 3R MoS2 using first principles and lattice dynamics calculations.... 
Molybdenum disulfide
Journal Article
Scientific Reports, 2015, Volume 5
Journal Article
ISSN 2050-7526, 9/2017, Volume 5, Issue 36, pp. 945 - 9411
Noble metal oxides, such as RuO 2 , have received attention as capacitor electrodes in dynamic random access memories (DRAMs). Noble metal oxides generally... 
Journal Article
Applied Surface Science, ISSN 0169-4332, 12/2019, Volume 497, p. 143740
Journal Article
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