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Thermal Science, ISSN 0354-9836, 2018, Volume 2018, Issue Suppl. 4, pp. S989 - S1000
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 11/2014, Volume 29, Issue 11, p. 115020
Journal Article
IEEE Transactions on Energy Conversion, ISSN 0885-8969, 09/2016, Volume 31, Issue 3, pp. 821 - 832
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 02/2014, Volume 29, Issue 2, p. 25007
Current collapse due to the trapping/de-trapping of the carriers at the surface and in the bulk of a 0.25 mu m gate length AlGaN/GaN high electron mobility... 
device simulation | current collapse | GaN | high electron mobility transistors (HEMTs) | PHYSICS, CONDENSED MATTER | TRAPS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRON-MOBILITY TRANSISTORS | SIMULATION | HOT | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | ALGAN/GAN HEMTS | TRANSIENT-RESPONSE | DEVICES | STRESS | FETS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2017, Volume 38, Issue 6, pp. 810 - 813
This letter presents a novel device concept of split-current magnetic sensor that is fully compatible with silicon-on-insulator(SOI) FinFETtechnology.The... 
dual gate | Sensitivity | Magnetometers | Magnetic sensors | Current measurement | split-current | FinFET | magnetic sensor | Logic gates | FinFETs | SOI | Magnetic circuits | TRANSISTOR | INVERSION LAYER | ENGINEERING, ELECTRICAL & ELECTRONIC | Integrated circuits | Sensors | Computer simulation | Power integrated circuits
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2017, Volume 38, Issue 6, pp. 810 - 813
Journal Article
IEEE Transactions on Energy Conversion, ISSN 0885-8969, 06/2014, Volume 29, Issue 2, pp. 453 - 462
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 8/2019, pp. 1 - 6
Gallium nitride (GaN) magnetic high electron mobility transistors (MagHEMTs) with different gate lengths intended for integration with magnetic flux... 
Temperature measurement | Sensitivity | Magnetic sensors | Current measurement | gallium nitride (GaN) | magnetic high electron mobility transistors (MagHEMTs) | Logic gates | Concentrator | Gallium nitride
Journal Article
Thermal Science, ISSN 0354-9836, 2018, Volume 22, Issue Suppl. 5, pp. S1613 - S1622
This paper presents some basic urban and architectural requirements regarding the installation of solar panels for electricity production on buildings. These... 
Thermal environment impacts | Construction | Architecture | Solar power plant | Urban planning | solar power plant | THERMODYNAMICS | SOLAR PLANTS | thermal environment impacts | construction | GENERATION | urban planning | architecture | Panels | Thermal environments | Photovoltaic cells | Buildings | Solar energy | Ventilation | Environmental impact | Power plants
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 04/2017, Volume 71, pp. 35 - 40
Cut-off frequency increase from 12.1 GHz to 26.4 GHz, 52.1 GHz and 91.4 GHz is observed when the 1 μm gate length GaN HEMT is laterally scaled down to = 0.5... 
Degradation | Radio frequency | Device modelling | Traps | GaN HEMTs | PHYSICS, APPLIED | PERFORMANCE | NANOSCIENCE & NANOTECHNOLOGY | MODFETS | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | HFETS | ALGAN/GAN HEMTS | Electric fields | Liquors
Journal Article
Thermal Science, ISSN 0354-9836, 2018, Volume 22, Issue Suppl. 4, pp. 1205 - 1216
Solar radiation in Serbia is for about a third higher than in Middle Europe, which represents a very favorable energy potential. Southeast Serbia is a leading... 
Photovoltaic cells | Solar radiation | Inclination | Power plants | photovoltaic modules | solar radiation | renewable energy sources | south Serbia photovoltaic power plants
Journal Article
Journal of the American College of Cardiology, ISSN 0735-1097, 12/2006, Volume 48, Issue 12, pp. 2500 - 2507
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 09/2016, Volume 8, Issue 38, pp. 25631 - 25636
The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or... 
AFM | metal oxide transistors | Kelvin probe | solution processing | SEMICONDUCTOR | In2O3 | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | ELECTRON-MICROSCOPY | NANOSCIENCE & NANOTECHNOLOGY | LOW-TEMPERATURE | FORCE MICROSCOPY | TIP | NANOWIRES | KELVIN PROBE MICROSCOPY
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2018, Volume 39, Issue 5, pp. 746 - 748
This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The... 
HEMT | magnetic sensor | MagFET | Gallium nitride | MODFETs | dual drain | Sensitivity | Magnetic field measurement | Magnetic sensors | split-current | GaN | HEMTs | Magnetic fields | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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