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ECS Transactions, ISSN 1938-5862, 2006, Volume 3, Issue 4, pp. 299 - 310
Conference Proceeding
Journal of crystal growth, ISSN 0022-0248, 2014, Volume 404, pp. 184 - 191
The growth of bulkx β-Ga2O3 single crystals by the Czochralski method is reported and discussed in terms of crucial growth conditions and correlated with basic... 
A1. Doping | B2. Transparent semiconducting oxide | A1. Characterization | A1. Annealing | A2. Czochralski method | B1. β-Ga2O3 | Annealing | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Doping | ELECTRICAL-PROPERTIES | Czochralski method | FLUX | CRYSTALLOGRAPHY | Characterization | TRANSPORT | BETA-GALLIUM OXIDE | TRANSPARENT | beta-Ga2O3 | Transparent semiconducting oxide
Journal Article
physica status solidi (a), ISSN 1862-6300, 09/2015, Volume 212, Issue 9, pp. 1880 - 1887
The optical absorption edge and near infrared absorption of SrTiO3 were measured at temperatures from 4 to 1703 K. The absorption edge decreases from 3.25 eV... 
SrTiO3 | band gaps | optical absorption | radiation transport | heat radiation | PHYSICS, CONDENSED MATTER | TRANSPORT | PHYSICS, APPLIED | MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | CRYSTALS | Infrared radiation | Temperature
Journal Article
physica status solidi (a), ISSN 1862-6300, 07/2015, Volume 212, Issue 7, pp. 1455 - 1460
Bulk MgGa2O4 single crystals with inverse spinel structure were grown from the melt by different methods. The degree of inversion could be changed by suitable... 
melt growth | optical properties | thermodynamic properties | MgGa2O4 | single crystals | electrical properties | MgGa | Melt growth | Single crystals | Electrical properties | Thermodynamic properties | Optical properties | GALLIUM OXIDE | PHYSICS, CONDENSED MATTER | SPINEL | PHYSICS, APPLIED | BETA-GA2O3 | MATERIALS SCIENCE, MULTIDISCIPLINARY | Epitaxy | Analysis
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2018, Volume 486, pp. 82 - 90
•Bulk β-Ga2O3 crystals grown the Czochralski method are doped with Cr, Ce, and Al.•Segregation phenomena of the dopants are analyzed.•Effective segregation... 
A1. Segregation | A1. Doping with Cr, Ce, Al | A1. Optical properties | A2. Czochralski method | B1. β-Ga2O3 crystal | B1. β-Ga | crystal | PHYSICS, APPLIED | OXIDE | Segregation | SCANDIUM GALLIUM GARNET | MATERIALS SCIENCE, MULTIDISCIPLINARY | Czochralski method | CRYSTALLOGRAPHY | IMPURITIES | ATMOSPHERE | Optical properties | Doping with Cr, Ce, Al | beta-Ga2O3 crystal | DOPED BETA-GA2O3
Journal Article
New Journal of Physics, ISSN 1367-2630, 08/2011, Volume 13
Transparent conducting oxides (TCOs) pose a number of serious challenges. In addition to the pursuit of high-quality single crystals and thin films, their... 
PHYSICS, MULTIDISCIPLINARY
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 66 - 73
SnO2 is a semiconductor with a wide optical bandgap (3.5 eV), which makes it an attractive transparent semiconducting oxide (TSO) for electronic and... 
SnO2 | transparent semiconducting oxides | crystal growth | single crystals | physical vapor transport | SnO | SYSTEM | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | STANNIC OXIDE CRYSTALS | FILMS | TIN OXIDE | ABSORPTION EDGE | VAPOR-PHASE | Epitaxy | Analysis
Journal Article
Radiation measurements, ISSN 1350-4487, 2019, Volume 121, pp. 49 - 53
β-Ga2O3 and β-Ga2O3:Ce crystals have been grown by the Czochralski method and their scintillation properties have been studied by means of pulse height,... 
β-Ga2O3 crystal | Scintillation | Scintillation decay | Ce-doped β-Ga2O3 crystal | Radioluminescence | Ce-doped β-Ga | β-Ga | crystal | SINGLE-CRYSTALS | LUMINESCENCE | YIELD | NUCLEAR SCIENCE & TECHNOLOGY | ULTRA-FAST SCINTILLATION | Ce-doped beta-Ga2O3 crystal | beta-Ga2O3 crystal
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2016, Volume 37, Issue 7, pp. 902 - 905
A Sn-doped (100) β-Ga 2 O 3 epitaxial layer was grown via metal-organic vapor phase epitaxy onto a single-crystal, Mg-doped semi-insulating (100) β-Ga 2 O 3... 
Resistance | MOSFET | Semiconductor device measurement | Epitaxial layers | β-Ga2O3 | Logic gates | Epitaxial growth | Power semiconductor devices | MOVPE | Substrates | MOSFETs | β-Ga | SILICON | MERIT | power semiconductor devices | SCHOTTKY-BARRIER DIODES | FIGURE | beta-Ga2O3 | HIGH-VOLTAGE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Japanese Journal of Applied Physics, ISSN 1347-4065, 2013, Volume 52, Issue 8S, pp. 08JA06 - 08JA06-6
Freestanding AlN single crystals are grown in a RF-heated furnace by physical vapor transport (PVT). Three different growth regimes with growth temperatures... 
SUBLIMATION GROWTH | AIN CRYSTALS | SINGLE-CRYSTALS | BOULES | PHYSICS, APPLIED | EVOLUTION | FABRICATION | PVT | Crystal defects | Nucleation | Furnaces | Crystals | Secondary ion mass spectrometry | Reflection | Density | Aluminum nitride | Crystal structure
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2014, Volume 404, pp. 184 - 191
The growth of bulkx β-Ga O single crystals by the Czochralski method is reported and discussed in terms of crucial growth conditions and correlated with basic... 
A1. Doping | B1. β-Ga | B2. Transparent semiconducting oxide | A1. Annealing | A1. Characterization | A2. Czochralski method
Journal Article
CRYSTENGCOMM, ISSN 1466-8033, 2/2013, Volume 15, Issue 12, pp. 222 - 2226
... Galazka,* Klaus Irmscher, Mike Pietsch, Tobias Schulz, Reinhard Uecker, Detlef Klimm and Roberto Fornari Melt-grown bulk In 2 O 3 single crystals were utilized... 
THIN-FILMS | CRYSTALLOGRAPHY | CHEMISTRY, MULTIDISCIPLINARY | ELECTRICAL-PROPERTIES
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2016, Volume 456, pp. 51 - 57
Journal Article
Interactive CardioVascular and Thoracic Surgery, ISSN 1569-9293, 06/2014, Volume 18, Issue 6, pp. 740 - 747
Journal Article
CrystEngComm, ISSN 1466-8033, 6/2016, Volume 18, Issue 24, pp. 458 - 4586
SrTiO 3 crystals grown by the top-seeded solution growth method in air show different shades of light brown coloration, depending on the growth conditions. In... 
SYSTEM | SINGLE-CRYSTALS | ELECTRON | ABSORBING MEDIUM | HIGH-RESOLUTION | ATOMS | CRYSTALLOGRAPHY | CHEMISTRY, MULTIDISCIPLINARY | SCATTERING
Journal Article
Materials science in semiconductor processing, ISSN 1369-8001, 2015, Volume 39, Issue C, pp. 54 - 60
High-purity germanium crystals approximately 12cm in diameter were grown in a hydrogen atmosphere using the Czochralski method. The dislocation density of the... 
Gamma-ray detector | Czochralski method | Semiconducting germanium | PHYSICS, CONDENSED MATTER | CONTACT | PHYSICS, APPLIED | DISLOCATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | GERMANIUM DETECTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | Detectors
Journal Article
ECS Journal of Solid State Science and Technology, ISSN 2162-8769, 2017, Volume 6, Issue 2, pp. Q3040 - Q3044
We studied the growth of Si-and Sn-doped homoepitaxial beta-Ga2O3 layers on (010)-oriented substrates by metal organic vapor phase epitaxy (MOVPE). At optimal... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | OXIDE | CHEMICAL-VAPOR-DEPOSITION | GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
ECS Journal of Solid State Science and Technology, ISSN 2162-8769, 2017, Volume 6, Issue 2, pp. Q3007 - Q3011
We present a new approach for scaling-up the growth of beta-Ga2O3 single crystals grown from the melt by the Czochralski method, which has also a direct... 
GALLIUM OXIDE | HETEROJUNCTION | PHYSICS, APPLIED | OXIDE THIN-FILMS | MATERIALS SCIENCE, MULTIDISCIPLINARY | HIGH-TEMPERATURE | GROWTH | SOLAR-BLIND PHOTODETECTORS | SENSORS | TRANSPARENT
Journal Article
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