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Materials Science Forum, ISSN 1662-9752, 07/2019, Volume 963, pp. 451 - 455
A thickness of Ba-introduced gate oxide was controlled with the oxygen concentration and a barrier layer thickness at a post-deposition annealing. The... 
Thickness | Conduction bands | Silicon | Barrier layers | Oxidation rate | Electrons
Journal Article
Journal Article
Reproductive Medicine and Biology, ISSN 1445-5781, 01/2018, Volume 17, Issue 1, pp. 20 - 28
The Japan Society of Obstetrics and Gynecology (JSOG) implemented an assisted reproductive technology (ART) registry system in 1986. Here are reported the... 
in vitro fertilization | single embryo transfer | assisted reproductive technology | The Japan Society of Obstetrics and Gynecology | intracytoplasmic sperm injection
Journal Article
Journal of Vision, ISSN 1534-7362, 07/2019, Volume 19, Issue 8, p. 65
Journal Article
American Journal of Gastroenterology, ISSN 0002-9270, 12/2016, Volume 111, Issue 12, pp. 1750 - 1758
Journal Article
日本産科婦人科學會雜誌, ISSN 0300-9165, 02/2016, Volume 68
Journal Article
Materials Science Forum, ISSN 0255-5476, 2018, Volume 924, pp. 477 - 481
A correlation between field effect mobility and an accumulation conductance has been investigated at 4H-SiC MOS interface with barium. 4H-SiC n-channel MOSFETs... 
Barium | Conductance | 4H-SiC | MOSFETs | MOS capacitor | Resistance
Conference Proceeding
Materials Science Forum, ISSN 1662-9752, 07/2019, Volume 963, pp. 613 - 616
Submicron 4H-SiC MOSFETs are attractive for high frequency operation of 4H-SiC integrated circuits. However, the short channel effects, such as threshold... 
Integrated circuits | Threshold voltage | MOSFETs
Journal Article
Materials Science Forum, ISSN 1662-9752, 07/2019, Volume 963, pp. 498 - 501
Low specific contact resistivity and high-temperature reliability of the Ni (x)/Nb (100-x) (where x = 25, 50, 75 nm) ohmic contact to 4H-SiC were investigated.... 
Silicides | Electrical resistivity | Contact resistance | Nickel | High temperature | High temperature environments | Reliability | Two dimensional analysis | Carbon | Niobium | Optimization
Journal Article
European Radiology, ISSN 0938-7994, 10/2018, Volume 28, Issue 10, pp. 4296 - 4305
Journal Article
Materials Science Forum, ISSN 1662-9752, 07/2019, Volume 963, pp. 837 - 840
Low-parasitic-capacitance 4H-SiC pMOSFETs using pseudo-self-aligned process were demonstrated for high-frequency CMOS inverters. In these pMOSFETs, device... 
CMOS | Capacitance | Inverters | Self alignment
Journal Article
Journal of Epidemiology, ISSN 0917-5040, 03/2017, Volume 27, Issue 3, pp. 123 - 129
Journal Article