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physica status solidi (b), ISSN 0370-1972, 05/2018, Volume 255, Issue 5, pp. 1700498 - n/a
Reflectivity of the plasmon–phonon modes in grating‐coupled AlGaN/GaN heterostructures grown either on GaN or on SiC substrates were studied across the... 
AlN | Fourier transform infrared spectroscopy | SiC | GaN | surface phonon polaritons | AlGaN | PHYSICS, CONDENSED MATTER | Analysis | Liquors | Silicon carbide
Journal Article
physica status solidi (b), ISSN 0370-1972, 05/2018, Volume 255, Issue 5, pp. 1700421 - n/a
In this work terahertz (THz) electroluminescence of shallow impurities in AlGaN/GaN high electron mobility transitor (HEMT) structures are studied at... 
terahertz electroluminescence | AlGaN/GaN HEMT structures | GaN shallow impurities
Journal Article
physica status solidi (b), ISSN 0370-1972, 05/2018, Volume 255, Issue 5, pp. 1870118 - n/a
In article no. 1700498, Janonis et al. discuss the structure design and excitation peculiarities of surface phonon polariton modes in AlGaN/GaN high electron... 
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 04/2019, Volume 93, pp. 280 - 283
Terahertz (THz) electroluminescence of shallow impurities in the AlGaN/GaN HEMT structures grown either on sapphire or silicon carbide substrates were studied... 
Emission | Spectroscopy | HEMT structures | Terahertz | AlGaN/GaN | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENGINEERING, ELECTRICAL & ELECTRONIC | Silicon carbide
Journal Article
LITHUANIAN JOURNAL OF PHYSICS, ISSN 1648-8504, 2018, Volume 58, Issue 2, pp. 188 - 193
This paper reports on the AlGaN/GaN Schottky diodes (SDs) and high-electron-mobility transistors (HEMTs) grown on a semi-insulating SiC substrate. The... 
high electron mobility transistor | PHYSICS, MULTIDISCIPLINARY | SiC | THz detection | GaN | Schottky diode
Journal Article
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, ISSN 0370-1972, 05/2018, Volume 255, Issue 5
In this work terahertz (THz) electroluminescence of shallow impurities in AlGaN/GaN high electron mobility transitor (HEMT) structures are studied at... 
terahertz electroluminescence | PHYSICS, CONDENSED MATTER | GaN shallow impurities | CARBON | GaN HEMT structures | GAN | SILICON | P-TYPE GERMANIUM | QUANTUM-CASCADE LASERS | AlGaN
Journal Article
Business: Theory and Practice, ISSN 1648-0627, 2006, Volume 7, Issue 2, pp. 55 - 72
Journal Article
Engineering, technology & applied science research, ISSN 2241-4487, 02/2018, Volume 8, Issue 1
A method of reducing load oscillations that occur when overhead crane reaches destination position is presented in the article. The use of control drive scheme... 
overhead crane | anti-swing control system | load | Pontryagin’s maximum principle | oscillations
Journal Article
Engineering Economics, ISSN 1392-2785, 2006, Issue 2 (47), pp. 15 - 22
... Results Aleksandras Vytautas Rutkauskas 1 , Vytautas Lukoševičius 2 , Vaidotas Jakštas 1 1 Vilniaus Gedimino technikos universitetas Saulėtekio al. 11, LT-10223... 
Economy
Journal Article
Transport, ISSN 1648-4142, 01/2015, Volume 30, Issue 1, pp. 61 - 68
Overhead cranes are widely used at industrial enterprises for transportation of materials and products. They are successfully adaptable to technological... 
Pontryagin's principle | dynamics | overhead crane | anti-swing system | stability | Overhead crane | Stability | Dynamics | Pontryagin’s principle | Anti-swing system | TRANSPORTATION SCIENCE & TECHNOLOGY | Cranes | Accuracy | Transportation | Swing | Maximum principle | Control systems | Transporting | Mechanical systems
Journal Article
Verslas: teorija ir praktika, ISSN 1648-0627, 2006, Volume 7, Issue 2, pp. 55 - 72
In the article decision management in a global currency market „“FOREX““ model is presented. The model is based on the adequate for investment profit... 
Economy
Journal Article
Lithuanian Journal of Physics, ISSN 1648-8504, 2014, Volume 54, Issue 4, pp. 227 - 232
We report Schottky diodes (SDs) and High Electron Mobility Transistors (HEMTs) fabricated of 2DEG AlGaN/GaN structures grown by Metalorganic Chemical Vapour... 
High electron mobility transistor | GaN | HEMT | AlGaN | Schottky diode | PHYSICS, MULTIDISCIPLINARY | High Electron Mobility Transistor | DC
Journal Article
Solid state phenomena, ISSN 1012-0394, 01/2015, Volume 220-221, pp. 369 - 373
Upon striving to ensure the cargo safety and precizity of its delivery, mechatronic control systems are more and more widely applied in lifting mechanisms.... 
Dynamic load factor | Rope’s elasticity | Lifting equipment
Journal Article
Transport, ISSN 1648-4142, 09/2011, Volume 26, Issue 3, pp. 279 - 283
In the recent period, girder bridge cranes are replaced with double-beam overhead cranes with a rectangular cross-section of the beams. In addition, new... 
overhead crane | time diagram | lifting process | dynamic model | stifness of the rope | PART | TRANSPORTATION SCIENCE & TECHNOLOGY | OPTIMIZATION | MODEL | Cranes | Dynamics | Girder bridges | Mathematical models | Transport | Cross sections | Loads (forces) | Hoisting
Journal Article
Mechanika, ISSN 1392-1207, 2007, Volume 63, Issue 1, pp. 45 - 49
After presentation of the classification of vibration damping devices for rotation systems developed in Vilnius Gediminas technical university, the problems... 
MECHANICS
Journal Article
Condensed matter, ISSN 2410-3896, 02/2019, Volume 4, Issue 1, p. 21
Graphene has shown great potential for ultra-high frequency electronics. However, using graphene in electronic devices creates a requirement for electrodes... 
doping | electric contacts | annealing | graphene
Journal Article
2018 22nd International Microwave and Radar Conference (MIKON), 05/2018, pp. 186 - 189
We report the low frequency noise characteristics of planar AlGaN/GaN bow-tie diodes designed for room temperature terahertz detection. These devices exhibit... 
Temperature measurement | Resistance | Semiconductor device measurement | Temperature | GaN | THz | noise | Semiconductor diodes | trap | Electrical resistance measurement | Gallium nitride | detector
Conference Proceeding
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