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2001, Textbooks in electrical and electronic engineering, ISBN 0198564465, Volume 11, xv, 259
Book
10/2017, ISBN 1107192250, 340
eBook
10/2017, ISBN 1107192250
Discover a fresh approach to efficient and insight-driven analog integrated circuit design in nanoscale-CMOS with this hands-on guide. Expert authors present a... 
eBook
2015 IEEE International Symposium on Circuits and Systems (ISCAS), ISSN 0271-4302, 05/2015, Volume 2015-, pp. 529 - 532
We present analytical expressions for MOSFET distortion as a function of inversion level, represented by g m /I D as a proxy. The expressions are particularly... 
Semiconductor device modeling | MOSFET | MOSFET modeling | nonlinear distortion | harmonic distortion | Distortion | SPICE | Data models | CMOS integrated circuits | Mathematical model | Integrated circuit modeling
Conference Proceeding
2005, 5th ed., McGraw-Hill standard handbooks, ISBN 0071384219, 1 v. (various pagings)
Book
2010, Analog circuits and signal processing series, ISBN 9780387471006, 179
This book provides a comprehensive overview of design methodologies for Analog Circuits. It includes a MATLAB dedicated toolbox, and is the first book to... 
Metal oxide semiconductors, Complementary | Electronics & communications engineering | Computer science | Processor Architectures | Solid State Physics | Engineering | Circuits and Systems | Spectroscopy and Microscopy | Design and construction | Linear integrated circuits | Low voltage integrated circuits
eBook
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 02/1996, Volume 31, Issue 2, pp. 179 - 186
Journal Article
2010, 1. Aufl., ISBN 0387471006
IC designers appraise currently MOS transistor geometries and currents to compromise objectives like gain-bandwidth, slew-rate, dynamic range, noise,... 
eBook
IEEE Conferences, 05/2015, pp. 529 - 532
We present analytical expressions for MOSFET distortion as a function of inversion level, represented by g sub(m)/I sub(D) as a proxy. The expressions are... 
Circuits | Mathematical analysis | Exact solutions | Inversions | Distortion | Nonlinearity | Mathematical models | MOSFETs
Journal Article
2011 Faible Tension Faible Consommation (FTFC), 05/2011, pp. 5 - 8
The g m /I D methodology allows designing Low-Voltage Low-Power CMOS circuits without the need to iterate SPICE simulations. The methodology leads directly to... 
Logic gates | Capacitance | Inverters | CMOS integrated circuits | Transistors | Integrated circuit modeling | Gain
Conference Proceeding
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 06/1990, Volume 25, Issue 3, pp. 748 - 756
A carry-free division algorithm is described. It is based on the properties of redundant signed digit (RSD) arithmetic to avoid carry propagation and uses the... 
Energy consumption | Data security | Laboratories | Power system protection | Public key cryptography | CMOS process | Hardware | Microelectronics | Adders | Arithmetic | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Proceedings of the 18th ACM Great Lakes symposium on vlsi, 05/2008, pp. 445 - 450
Redundancy in the output code, as instrument to reduce the impact of non-idealities in different architectures of two-step A to D converters, is investigated.... 
a/d converter | system-level simulations | A/D converter | System-level simulations
Conference Proceeding
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