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basic electric elements (88) 88
electric solid state devices not otherwise provided for (88) 88
electricity (88) 88
semiconductor devices (88) 88
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crystal growth (81) 81
after-treatment of single crystals or a homogeneouspolycrystalline material with defined structure (74) 74
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production of a homogeneous polycrystalline material withdefined structure (74) 74
refining by zone-melting of material (74) 74
single crystals or homogeneous polycrystalline material withdefined structure (74) 74
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unidirectional solidification of eutectic material orunidirectional demixing of eutectoid material (74) 74
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coating by vacuum evaporation, by sputtering, by ionimplantation or by chemical vapour deposition, in general (59) 59
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epitaxial growth (24) 24
physics, applied (20) 20
epitaxialschicht (13) 13
sic (13) 13
x-ray topography (13) 13
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epitaxialwachstum (8) 8
epitaxy (8) 8
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röntgenstrahltopographie (8) 8
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Japanese Journal of Applied Physics, ISSN 0021-4922, 09/2018, Volume 57, Issue 9, p. 90314
Multiple-beam diffraction X-ray topography was used to determine the Burgers vector b of threading edge dislocations (TEDs) and basal plane dislocations (BPDs)... 
DISLOCATIONS | PHYSICS, APPLIED | DIODES | SUBSTRATE | GROWTH | POWER DEVICES | Diffraction | Edge dislocations | Epitaxial layers | Topography | Crystals | X-ray diffraction | Basal plane | X ray topography | Burgers vector
Journal Article
Materials Science Forum, ISSN 1662-9752, 07/2019, Volume 963, pp. 255 - 258
4H-SiC surfaces before and after epitaxial growth (substrate and epitaxial layer surfaces) were investigated by mirror projection electron microscopy (MPJ) and... 
Atomic force microscopy | Microscopy | Atomic force microscopes | Grooves | Epitaxial growth | Substrates | Dislocations
Journal Article
Materials Science Forum, ISSN 0255-5476, 2018, Volume 924, pp. 180 - 183
Synchrotron X-ray topography was carried out for 4H-SiC crystals grown by high-temperature gas source method, and transmission topography analysis with g= or... 
TED | TSD | High-temperature gas source method | X-ray topography | X ray topography | High temperature gases | Topography | Crystals
Conference Proceeding
Materials Science Forum, ISSN 0255-5476, 2018, Volume 924, pp. 160 - 163
The expansion behavior of double Shockley stacking faults (DSFs) was investigated in heavily nitrogen doped 4H-SiC crystals at high temperatures up to 1350°C.... 
Photoluminescence | Double Shockley stacking fault | Immobilization | Expansion velocity | Synchrotron x-ray topography | Partial dislocation | Thermal annealing | Hall measurement | Stacking faults | Crystals | Electric properties
Conference Proceeding
Physica Status Solidi (B) Basic Research, ISSN 0370-1972, 07/2009, Volume 246, Issue 7, pp. 1553 - 1568
This paper surveys extended defects in 4H-SiC epilayers and reports recent results concerning fast epitaxial growth. Synchrotron X-ray topography, transmission... 
PHYSICS, CONDENSED MATTER | DISLOCATIONS | PRECURSOR | EPILAYERS | MECHANISM | SURFACE-DEFECTS | STACKING-FAULTS | CARROT DEFECTS | X-RAY TOPOGRAPHY | SILICON-CARBIDE EPITAXY | LAYERS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2010, Volume 97, Issue 17, p. 172107
Frank-type defects on the basal plane in thick 4H-SiC epitaxial layers have been characterized by photoluminescence (PL) spectroscopy and a PL imaging... 
PHYSICS, APPLIED | EPITAXIAL-GROWTH | STACKING-FAULTS
Journal Article
Philosophical Magazine, ISSN 1478-6435, 10/2017, Volume 97, Issue 30, pp. 2736 - 2752
Shockley-type stacking faults expanded in 4H-SiC epilayers induced by ultraviolet illumination were investigated using a photoluminescence imaging method, a... 
dislocations | stacking faults | Silicon carbide (SiC) | crystal defects | SIC PIN DIODES | PHYSICS, CONDENSED MATTER | DEFECTS | PHYSICS, APPLIED | BEHAVIOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | I-N-DIODES | GROWTH
Journal Article
Materials Science Forum, ISSN 0255-5476, 2016, Volume 858, pp. 361 - 366
  This paper describes 3D imaging of extended defects in 4H-SiC using optical second-harmonic generation (SHG) and two-photon-exited photoluminescence (2PPL).... 
Multi photon | SHG | Imaging | Topography | Photoluminescence | X-ray | SiC | Extended defects | Dislocations | Three dimensional | Stacking faults | Emission analysis | Images | Emission | Tilt | Defects
Conference Proceeding
Applied Physics Letters, ISSN 0003-6951, 10/2010, Volume 97, Issue 17, pp. 172107 - 172107-3
Frank-type defects on the basal plane in thick 4H-SiC epitaxial layers have been characterized by photoluminescence (PL) spectroscopy and a PL imaging... 
Journal Article
Materials Science Forum, ISSN 0255-5476, 2016, Volume 858, pp. 119 - 124
  This paper reports on recent advances in 4H-SiC epitaxial growth toward high-throughput production of high-quality and uniform 150 mm-diameter 4H-SiC... 
Lifetime | Growth rate | Defect | Stacking fault | Epitaxial growth | Uniformity | Dislocation | Silicon carbide | Vacancies | Reactors | Variability | High speed | Carbon | Defects
Conference Proceeding
Applied Physics Express, ISSN 1882-0778, 12/2014, Volume 7, Issue 12, p. 121303
We demonstrate the three-dimensional imaging of threading screw dislocations (TSDs), threading edge dislocations (TEDs), and basal plane dislocations (BPDs) in... 
EXTENDED DEFECTS | TOPOGRAPHY | PHYSICS, APPLIED | THREADING DISLOCATIONS | EPILAYERS | EPITAXIAL-GROWTH
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 05/2018, Volume 78, pp. 2 - 12
Journal Article
Materials Science Forum, ISSN 0255-5476, 2016, Volume 858, pp. 61 - 64
  This paper investigates the quality of 4H-SiC crystals grown at a very fast growth rate (> 2.5 mm/h) using a high-temperature gas source method. Differences... 
TSD | High-temperature gas source method | Synchrotron X-ray topography | Crystal growth | Synchrotrons | Fluctuation | Crystals | Doping | Formations | Bunching | X-ray topography
Conference Proceeding
Jpn J Appl Phys, ISSN 0021-4922, 4/2013, Volume 52, Issue 4, pp. 04CP09 - 04CP09-4
We performed a plan-view and cross-sectional photoluminescence (PL) imaging and a spectral analysis of threading dislocations in 4H-SiC epilayers in the... 
MICROPIPES | PHYSICS, APPLIED | Edge dislocations | Threading dislocations | Grazing incidence | Imaging | Spots | Photoluminescence | X-ray topography | Cross sections (physics) | Dislocations
Journal Article
Materials Science Forum, ISSN 0255-5476, 2016, Volume 858, pp. 29 - 32
  Limitations in the very fast growth of 4H-SiC crystals are surveyed for a high-temperature gas source method. The evolution of macro-step bunching and void... 
High growth rate | HTCVD | Nitrogen doping | Bulk growth | Crystal growth | Voids | Tradeoffs | Crystals | Evolution | Formations | Nitrogen | Bunching
Conference Proceeding
Materials Science Forum, ISSN 0255-5476, 2016, Volume 858, pp. 23 - 28
  In order to diffuse the use of SiC, mass-production technologies of SiC wafers are needed. It is easy to be understood that high-speed and long-sized growth... 
Gas source growth method | Growth rate | TSD | BPD | High-speed growth | HTCVD | Bulk growth | Dislocation | Seeds | Silicon carbide | Equivalence | Sublimation | High speed | Crystals | Ingots | Density
Conference Proceeding
Journal of Crystal Growth, ISSN 0022-0248, 09/2014, Volume 402, pp. 260 - 266
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2005, Volume 26, Issue 2, pp. 99 - 101
Journal Article
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