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Applied Physics Letters, ISSN 0003-6951, 10/2011, Volume 99, Issue 18
Journal Article
2003, 3rd ed., ISBN 0471428779, xviii, 528
Book
Applied Physics Letters, ISSN 0003-6951, 03/2012, Volume 100, Issue 10
Journal Article
1988, Kluwer international series in engineering and computer science, ISBN 0898382599, Volume SECS 45, xii, 290
Book
1986, 2nd ed. --, ISBN 9780471887584, xx, 524
Book
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 10/2011, Volume 99, Issue 18, p. 181125
We synthesized up to Ge0.914Sn0.086 alloys on (100) GaAs/InyGa1-yAs buffer layers using molecular beam epitaxy. The buffer layers enable engineered control of... 
PHYSICS, APPLIED | BUFFER LAYERS
Journal Article
Nature Photonics, ISSN 1749-4885, 06/2012, Volume 6, Issue 6, pp. 391 - 397
Retinal degenerative diseases lead to blindness due to loss of the 'image capturing' photoreceptors, while neurons in the 'image-processing' inner retinal... 
MORPHOMETRIC ANALYSIS | SYSTEM | CHARGE-INJECTION | PHYSICS, APPLIED | PRIMATE RETINA | ELECTRICAL-STIMULATION | GANGLION-CELLS | ELECTRODES | MACULAR DEGENERATION | OPTICS | RETINITIS-PIGMENTOSA | NEURAL STIMULATION | Solar cells | Surgical implants | Photovoltaic cells | Neurons | Images | Density | Pixels | Prosthetics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2012, Volume 100, Issue 14
Journal Article
Nanotechnology, ISSN 0957-4484, 02/2011, Volume 22, Issue 6
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2011, Volume 98, Issue 26, p. 261917
The Ge-Ge longitudinal optical Raman peak has been measured in strained Ge1-xSnx alloy layers grown on top of relaxed InyGa1-yAs buffer layers on GaAs... 
PHYSICS, APPLIED | LAW
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2011, Volume 98, Issue 1, pp. 011111 - 011111-3
Highly tensile-strained layers of Ge were grown via molecular beam epitaxy using step-graded In x Ga 1 − x As buffer layers on (100) GaAs. These layers have... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | BAND | GAP
Journal Article
Nano Letters, ISSN 1530-6984, 09/2006, Volume 6, Issue 9, pp. 2140 - 2144
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 03/2012, Volume 100, Issue 10, p. 102109
Unstrained and compressive-strained Ge1-xSnx alloys were grown on InGaAs buffer layers by molecular beam epitaxy. Photoreflectance at room temperature... 
PHYSICS, APPLIED
Journal Article
Thin Solid Films, ISSN 0040-6090, 03/2012, Volume 520, Issue 11, pp. 3927 - 3930
High-quality Ge Sn thin films on InGaAs buffer layers have been demonstrated using low-temperature growth by molecular beam epitaxy. X-ray diffraction and... 
GeSn alloy | Structural characterization | Molecular beam epitaxy | Epitaxial growth | Strain
Journal Article
Nature, ISSN 0028-0836, 10/2005, Volume 437, Issue 7063, pp. 1334 - 1336
Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications... 
BAND PARAMETERS | SHIFT | SIGE | ALLOYS | MULTIDISCIPLINARY SCIENCES | ELECTROABSORPTION MODULATORS | TECHNOLOGY | OPTICAL INTERCONNECTS | Electronics | Silicon | Semiconductors | Quantum theory
Journal Article
Nature Communications, ISSN 2041-1723, 12/2017, Volume 8, Issue 1, pp. 628 - 628
Silicon single-photon avalanche detectors are becoming increasingly significant in research and in practical applications due to their high signal-to-noise... 
DETECTORS | SOLAR-CELLS | MULTIDISCIPLINARY SCIENCES | DEVICES | PHOTODIODES | SENSORS | EFFICIENCY | Timing jitter | Vibration | Metals | Photomultiplier tubes | Photons | Time measurement | Devices | Photon avalanches | Sensor arrays | Metal oxides | Photomultipliers | CMOS | Trapping | Efficiency | Tradeoffs | Avalanche diodes | Detectors | Organic light emitting diodes | Performance enhancement | Silicon | Sensors | Compatibility
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2011, Volume 98, Issue 15
Journal Article
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