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Applied Physics Letters, ISSN 0003-6951, 06/2011, Volume 98, Issue 26, p. 261917
The Ge-Ge longitudinal optical Raman peak has been measured in strained Ge1-xSnx alloy layers grown on top of relaxed InyGa1-yAs buffer layers on GaAs... 
PHYSICS, APPLIED | LAW
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 03/2012, Volume 100, Issue 10, p. 102109
Unstrained and compressive-strained Ge1-xSnx alloys were grown on InGaAs buffer layers by molecular beam epitaxy. Photoreflectance at room temperature... 
PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2012, Volume 100, Issue 14
Journal Article
Nanotechnology, ISSN 0957-4484, 02/2011, Volume 22, Issue 6
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2017, Volume 111, Issue 8, p. 81109
Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping... 
Timing jitter | Ultraviolet radiation | Boron | Vibration | Avalanche diodes | Doping | Photometers | Collection | Photodiodes | Electric fields | Penetration depth | Atomic and Nuclear Physics | MATERIALS SCIENCE | ENGINEERING
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2015, Volume 106, Issue 10, p. 101111
An integrated Ge photodetector of very low dark current density is demonstrated in an optoelectronic integrated circuit label-free biosensing system. The... 
PHYSICS, APPLIED | BIOSENSORS | LABEL-FREE DETECTION | SILICON | Integrated circuits | Organic chemistry | Chemical sensors | Optoelectronics | Circuits | Photometers | Dark current | Optical communication | Sensors | Signal to noise ratio
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 6, p. 63110
The development of a precise micromachining process for Ge1-xSnx has the potential to enable both the fabrication and optimization of Ge1-xSnx-based devices in... 
IRRADIATION | PHYSICS, APPLIED | CHLORINE ADSORPTION | GERMANIUM | SILICON | FABRICATION | GAAS | Microelectromechanical systems | Control surfaces | Micromachining | Surface properties | Etching | Surface roughness | Sputtering | Photonics
Journal Article
Nano Letters, ISSN 1530-6984, 09/2006, Volume 6, Issue 9, pp. 2140 - 2144
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2011, Volume 98, Issue 21, pp. 211101 - 211101-3
We electrically and optically characterize a germanium resonator diode on silicon fabricated by integrating a germanium light emitting diode with a microdisk... 
ROOM-TEMPERATURE | PHYSICS, APPLIED
Journal Article
Nature, ISSN 0028-0836, 10/2005, Volume 437, Issue 7063, pp. 1334 - 1336
Silicon is the dominant semiconductor for electronics, but there is now a growing need to integrate such components with optoelectronics for telecommunications... 
BAND PARAMETERS | SHIFT | SIGE | ALLOYS | MULTIDISCIPLINARY SCIENCES | ELECTROABSORPTION MODULATORS | TECHNOLOGY | OPTICAL INTERCONNECTS | Electronics | Silicon | Semiconductors | Quantum theory
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2007, Volume 102, Issue 4, pp. 044311 - 044311-5
Si nanowires were grown horizontally using the vapor-liquid-solid method from vertical {111} surfaces etched into a (110) Si substrate. The nanowires were... 
Journal Article
Nano Letters, ISSN 1530-6984, 12/2008, Volume 8, Issue 12, pp. 4410 - 4414
We report a structure to control nanowire location and growth direction and demonstrate top-gated, metal-oxide-semiconductor, field-effect transistors... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON NANOWIRES | GROWTH | CHEMISTRY, PHYSICAL | DEVICES | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | INTERCONNECTION
Journal Article
Thin Solid Films, ISSN 0040-6090, 03/2012, Volume 520, Issue 11, pp. 3927 - 3930
High-quality Ge Sn thin films on InGaAs buffer layers have been demonstrated using low-temperature growth by molecular beam epitaxy. X-ray diffraction and... 
GeSn alloy | Structural characterization | Molecular beam epitaxy | Epitaxial growth | Strain
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2011, Volume 98, Issue 15
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 02/2012, Volume 48, Issue 2, pp. 187 - 197
Journal Article
Journal of neural engineering, ISSN 1741-2560, 07/2019
Retinal prostheses aim to restore sight by electrically stimulating the surviving retinal neurons. In clinical trials of the current retinal implants,... 
Index Medicus
Journal Article
Optics Express, ISSN 1094-4087, 04/2007, Volume 15, Issue 9, pp. 5851 - 5859
We demonstrate an electroabsorption modulator on a silicon substrate based on the quantum confined Stark effect in strained germanium quantum wells with... 
ELECTROABSORPTION MODULATORS | INTERCONNECTS | QUALITY | OPTICS
Journal Article
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