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semiconductor devices (40) 40
basic electric elements (39) 39
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electricity (39) 39
switches (22) 22
engineering, electrical & electronic (20) 20
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IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2013, Volume 60, Issue 3, p. 1114
  The endurance/retention performance of [Formula Omitted] cap RRAM devices in a 1T1R configuration shows metal cap dependence. For Hf and Ti caps, owning... 
Motor ability
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2018, Volume 113, Issue 22, p. 222408
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than... 
PHYSICS, APPLIED | DRIVEN | Electric potential | Torque | Computer simulation | Anisotropy | Domain walls | Dependence | Tunnel junctions | Disks | Switching | Physics - Mesoscale and Nanoscale Physics
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 2013, Volume 60, Issue 3, pp. 1114 - 1121
The endurance/retention performance of HfO2/Metal cap RRAM devices in a 1T1R configuration shows metal cap dependence. For Hf and Ti caps, owning strong... 
HfO | quantum point conductance (QPC) | thermodynamics | filament shape | Endurance | resistive switching memory (RRAM) | retention | PHYSICS, APPLIED | HfO2 | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 05/2018, Volume 10, Issue 17, pp. 14835 - 14842
In this paper, we report on the use of CuInX2 (X = Te, Se, S) as a cation supply layer in filamentary switching applications. Being used as absorber layers in... 
CBRAM | AFM | chalcogenide | selector | thermal stability | volatile filament | electrical functionality | conductive bridge random access memory
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2018, Volume 39, Issue 11, pp. 1652 - 1655
Resistive switching memory devices can be categorized into either filamentary or non-filamentary ones depending on the switching mechanisms. Both types have... 
Neurons | filamentary | Switches | RRAM | Pattern recognition | Random telegraph noise | neural network | RTN | Resistance | Training | Ta₂O | Neural networks | TiO | Synapses | TaO | pattern recognition | DEFECTS | BEHAVIOR | Ta2O5 | NONVOLATILE MEMORY | NOISE | ENGINEERING, ELECTRICAL & ELECTRONIC | SYNAPSES | DEVICES | TiO2 | Memory devices | Accuracy | Tantalum | Amplitudes | Electronic devices | Tantalum oxides | Comparative studies | Variations | Switching theory | Titanium dioxide
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2019, Volume 40, Issue 7, pp. 1072 - 1075
We report for the first time, an improvement in post-cycling low resistance state retention of oxide-based resistive RAM devices by injecting copper into the... 
OxRAM | retention after cycling (RAC) | oxygen vacancy | Switches | RRAM | Resistance | CBRAM | Resistive RAM | oxide | Tin | Kinetic theory | Copper | retention | CONDUCTIVE-BRIDGING RAM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2019, Volume 66, Issue 1, pp. 777 - 784
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 955 - 958
Despite the tremendous efforts in the past decade devoted to the development of filamentary resistive-switching devices (RRAM), there is still a lack of... 
random telegraph noise | Switches | defect profile | RRAM | Resistance | Electrodes | HfO | Ta₂O | Neuromorphics | Current measurement | over-reset | Resistive switching | Tin | Hafnium compounds | HfO2 | Ta2O5 | NOISE | MODEL | RESISTIVE SWITCHING MEMORY | ENGINEERING, ELECTRICAL & ELECTRONIC | High resistance | Tantalum | Synapses | Tantalum oxides | Defects
Journal Article
Faraday Discussions, ISSN 1359-6640, 2/2019, Volume 213, pp. 67 - 85
This study is focused on Conductive Bridging Random Access Memory (CBRAM) devices based on chalcogenide electrolyte and Cu-supply materials, and aims at... 
TRANSITION | CHEMISTRY, PHYSICAL | MEMORY | CONDUCTIVE-BRIDGING RAM | Memory devices | Electrical properties | Semiconductor devices | Random access memory | Parameter identification | Thermal stability | Tellurium | Motion stability | Chalcogenides | Organic chemistry | CMOS | Bonding strength | Chemical bonds | Electrolytes | Transistors
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2018, Volume 39, Issue 3, pp. 351 - 354
Non-localized and bipolar switching in vacancy modulated conductive oxide resistive switching devices (TiN/a-Si/TiO x /TiN) is attributed to defect profile... 
Electrodes | modeling | Modulation | polarity inversion | Switches | Programming | RRAM | Kinetic theory | non-localized switching | Reliability | Object recognition | ENGINEERING, ELECTRICAL & ELECTRONIC | Titanium oxides | Switching | Defects
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 07/2019, Volume 215, p. 110990
Random telegraph noise (RTN) signals in Ge Se ovonic threshold switching (OTS) selector have been analysed in this work, both before and after the first-fire... 
RRAM | Filament | Random telegraph noise | OTS | Selector | Defects | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Electric noise | Conductivity | Amplitudes | Statistical analysis | Random access memory | Switching
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2018, Volume 39, Issue 4, pp. 480 - 483
The underlying mechanism causing tail bits in data retention for high resistance state (HRS) of vacancy-modulated conductive oxide resistive RAM, consisting of... 
Resistance | non-filamentary resistive switching | Fluctuations | Fitting | data retention | Switches | Programming | tail bits | RRAM | TiO | Current density | OPERATION | TiO2 | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2019, Volume 40, Issue 8, pp. 1269 - 1272
Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in resistive switching random access memory (RRAM)... 
Extrapolation | GeSe | Pulse measurements | resistive switching random access memory (RRAM) | probability | Switches | Germanium | ovonic threshold switching (OTS) | selector | Weibull distribution | Reliability | resistive switching random access memory (PRAM) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 06/2017, Volume 178, pp. 122 - 124
In this work, we observe the switching mechanisms in non-filamentary resistive switching (RS) devices, investigated through a nanosized conductive tip used as... 
Non-filamentary resistive switching | VMCO | Areal-switching | TiO2 | TiO | PHYSICS, APPLIED | RESISTANCE | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Electrodes | Titanium oxides | Resistance | Vacancies | Spots | Conductivity | Switching
Journal Article
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