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Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 265 - 268
Depth profiling of the ambipolar carrier lifetime was performed in n-type, 140mm thick silicon carbide (SiC) epilayer using excitation by two-photon absorption... 
Silicon Carbide | Carrier lifetime profiling | Photon absorption | Depth profiling | Carrier lifetime
Journal Article
Applied Optics, ISSN 1559-128X, 05/2010, Volume 49, Issue 13, pp. C58 - C66
A kinetic model to predict the relative intensities of the atomic C/H/N/O emission lines in laser-induced breakdown spectroscopy (LIBS) has been developed for... 
EXCITATION | AMBIENT AIR | ABLATION | PLASMA EXPANSION | METALLIC LEAD | PLUME | OPTICS | LINES | Optics | Usage | Research | Methods | Laser spectroscopy
Journal Article
ECS transactions, ISSN 1938-6737, 01/2017, Volume 75, Issue 40, pp. 13 - 20
Journal Article
ECS Journal of Solid State Science and Technology, ISSN 2162-8769, 2017, Volume 6, Issue 11, pp. S3099 - S3102
High voltage (>4000 V) GaN lateral photoconductive semiconductor switches (PCSSs) were developed and characterized. The epitaxial structure consisted of 1.4 mu... 
DOPED SEMIINSULATING GAN | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2014, Volume 61, Issue 6, pp. 3088 - 3094
Journal Article
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 03/2017, Volume 64, Issue 3, pp. 1006 - 1013
Simplified analytic expressions are presented for calculating pulsed-laser induced charge generation in devices with collection volumes of any size. The... 
Limiting | optical Kerr effect | Laser excitation | Laser beams | Photodiodes | single-event upset (SEU) | CMOS | Absorption | silicon | free-carrier absorption | Measurement by laser beam | single-event effect (SEE) | two-photon absorption | free-carrier refraction | Nonlinear optics | nonlinear optics | SOI (semiconductors) | Silicon | Lasers | Random access memory
Journal Article
Applied physics letters, ISSN 0003-6951, 11/2017, Volume 111, Issue 22
Carrier lifetime control in thick silicon carbide (SiC) epilayers is essential for fabricating >10 kV devices. Lifetime depth profiles were investigated in... 
Carriers | Silicon wafers | Carrier recombination | Silicon carbide | Carrier lifetime | Decay | Photoluminescence | Photon absorption | Service life assessment
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2014, Volume 61, Issue 6, pp. 3416 - 3423
Journal Article
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