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Russian Physics Journal, ISSN 1064-8887, 7/2018, Volume 61, Issue 3, pp. 491 - 497
Journal Article
Semiconductors, ISSN 1063-7826, 03/2008, Volume 42, Issue 3, pp. 370 - 374
The results of studying the diffusion of Cr impurity in GaAs according to electrical measurements are reported. Dependences of the diffusion coefficient and... 
VAPORS | CRYSTALS | GALLIUM ARSENIDES | VACANCIES | DIFFUSION | MATERIALS SCIENCE | CHROMIUM | IMPURITIES | CRYSTAL LATTICES | SOLUBILITY
Journal Article
Russian Physics Journal, ISSN 1064-8887, 4/2018, Volume 60, Issue 12, pp. 2177 - 2185
Journal Article
Semiconductors, ISSN 1063-7826, 10/2013, Volume 47, Issue 10, pp. 1382 - 1386
Journal Article
Journal Article
Russian Physics Journal, ISSN 1064-8887, 12/2013, Volume 56, Issue 7, pp. 757 - 759
In the present work, the external quantum efficiency of the blue LED- structures based on InGaN/GaN is studied as a function of the current density (or... 
Light-Emitting Diodes (LED) | heterostructures | luminescence | quantum efficiency | quantum wells | PHYSICS, MULTIDISCIPLINARY | Light-emitting diodes | Quantum wells | Liquors
Journal Article
Russian Physics Journal, ISSN 1064-8887, 1/2014, Volume 56, Issue 9, pp. 997 - 1006
Journal Article
Russian Physics Journal, ISSN 1064-8887, 4/2014, Volume 56, Issue 12, pp. 1435 - 1438
Electrical characteristics of GaAs doped with Fe in the diffusion process are studied. It is shown that as in the case of the single-crystal GaAs doped with Fe... 
Condensed Matter Physics | Optics, Optoelectronics, Plasmonics and Optical Devices | Nuclear Physics, Heavy Ions, Hadrons | electrical properties | Theoretical, Mathematical and Computational Physics | Physics, general | iron impurity | GaAs | Physics | PHYSICS, MULTIDISCIPLINARY | Annealing | Iron | Gallium arsenide | Epitaxy | Electric properties
Journal Article
Instruments and Experimental Techniques, ISSN 0020-4412, 3/2009, Volume 52, Issue 2, pp. 212 - 216
The characteristics of switching diodes based on GaAs with deep impurity centers are considered. Structures of semiconductor devices are formed during... 
Measurement Science, Instrumentation | Physical Chemistry | Physics | Electrical Engineering | INSTRUMENTS & INSTRUMENTATION | ENGINEERING, MULTIDISCIPLINARY | Circuit components
Journal Article
Inorganic Materials, ISSN 0020-1685, 2/2012, Volume 48, Issue 2, pp. 93 - 95
The decomposition of a solid solution of iron in gallium arsenide at 900°C has been studied by magnetic force microscopy and transmission electron microscopy.... 
Chemistry | Inorganic Chemistry | Industrial Chemistry/Chemical Engineering | Materials Science, general | Ferromagnetism | Electron microscopy | Magnetic fields | Gallium arsenide | Arsenic compounds
Journal Article
Russian Physics Journal, ISSN 1064-8887, 07/2009, Volume 52, Issue 2, pp. 163 - 169
The effect of base thickness (pi-layer thickness d(pi)) on the reverse current-voltage characteristic and the switching voltage U-sw in a diffusion avalanche... 
S-diode | Avalanche breakdown | Gallium arsenide | Current-voltage characteristic | gallium arsenide | current-voltage characteristic | PHYSICS, MULTIDISCIPLINARY | avalanche breakdown
Journal Article
Instruments and Experimental Techniques, ISSN 0020-4412, 7/2010, Volume 53, Issue 4, pp. 530 - 535
Results of studying volt-ampere characteristics of switching avalanche S-diodes are presented. It is shown that, for S-diodes based on structures obtained by... 
Measurement Science and Instrumentation | Physical Chemistry | Physics | Electrical Engineering | INSTRUMENTS & INSTRUMENTATION | ENGINEERING, MULTIDISCIPLINARY | Avalanches
Journal Article
Instruments and Experimental Techniques, ISSN 0020-4412, 7/2011, Volume 54, Issue 4, pp. 521 - 523
Results of studying avalanche S-diodes in a circuit with pulse optical drives are presented. The experimental delay time dependences of the S-diode switching... 
Measurement Science and Instrumentation | Physical Chemistry | Physics | Electrical Engineering | INSTRUMENTS & INSTRUMENTATION | ENGINEERING, MULTIDISCIPLINARY | Avalanches
Journal Article
Russian Physics Journal, ISSN 1064-8887, 11/2008, Volume 51, Issue 11, pp. 1157 - 1160
Journal Article
Semiconductors, ISSN 1063-7826, 8/2006, Volume 40, Issue 8, pp. 869 - 874
Diffusion of impurities of transition metals Fe, Cu, and Cr in heavily doped p +-, n +-, and intrinsic (at diffusion temperature) GaAs is studied. A technique... 
Physics | Magnetism, Magnetic Materials | Electromagnetism, Optics and Lasers | PHYSICS, CONDENSED MATTER | GALLIUM-ARSENIDE | SOLUBILITY | EQUILIBRIUM | GALLIUM ARSENIDES | HOLES | INTERSTITIALS | COPPER | DIFFUSION | IRON | MATERIALS SCIENCE | DOPED MATERIALS | CHROMIUM | IMPURITIES | SEMICONDUCTOR MATERIALS
Journal Article
Inorganic Materials, ISSN 0020-1685, 9/2008, Volume 44, Issue 9, pp. 918 - 921
We have studied chromium diffusion from a surface layer produced by thermal evaporation into n-type GaAs in a flowing inert-reducing atmosphere. The... 
Chemistry | Materials Science | Inorganic Chemistry | Industrial Chemistry/Chemical Engineering | GALLIUM-ARSENIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | Gallium arsenide | Gallium arsenides | Mathematical analysis | Solubility | Chromium | Evaporation | Diffusion | Diffusivity
Journal Article
Semiconductors, ISSN 1063-7826, 9/2006, Volume 40, Issue 9, pp. 999 - 1001
The diffusion of chromium in GaAs is studied under equilibrium arsenic-vapor pressure. The temperature dependences of chromium diffusivity and solubility in... 
Physics | Magnetism, Magnetic Materials | Electromagnetism, Optics and Lasers | PHYSICS, CONDENSED MATTER | GALLIUM-ARSENIDE
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 2001, Volume 466, Issue 1, pp. 25 - 32
A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer... 
SI-GaAs | Deep impurities | Ionizing detectors | X-rays | CHARGE-COLLECTION | ionizing detectors | INSTRUMENTS & INSTRUMENTATION | SPECTROSCOPY | NUCLEAR SCIENCE & TECHNOLOGY | SEMIINSULATING GAAS | deep impurities | PHYSICS, PARTICLES & FIELDS
Journal Article
Semiconductors, ISSN 1063-7826, 3/2004, Volume 38, Issue 3, pp. 262 - 265
Chromium diffusion in GaAs was studied by measuring the thickness of high-resistivity layers formed during diffusion of chromium (a deep acceptor) in n-GaAs.... 
Physics | Magnetism, Magnetic Materials | Electromagnetism, Optics and Lasers | PHYSICS, CONDENSED MATTER | DETECTORS | COPPER | SOLUBILITY
Journal Article
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