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Nature Photonics, ISSN 1749-4885, 08/2010, Volume 4, Issue 8, pp. 527 - 534
The past decade has seen rapid progress in research into high-performance Ge-on-Si photodetectors. Owing to their excellent optoelectronic properties, which... 
HIGH-QUALITY GE | WAVE-GUIDE PHOTODETECTORS | AVALANCHE PHOTODIODES | POLYCRYSTALLINE GERMANIUM | PHYSICS, APPLIED | INFRARED DETECTORS | CHEMICAL-VAPOR-DEPOSITION | BUFFER LAYERS | OPTICS | HIGH-SPEED | SURFACE-ROUGHNESS | THREADING-DISLOCATION DENSITIES | Data links | Power consumption | Wavelengths | Circuits | Photodetectors | Epitaxial growth | Devices | Photonics
Journal Article
Nature Photonics, ISSN 1749-4885, 06/2007, Volume 1, Issue 6, pp. 303 - 305
Journal Article
Nature Photonics, ISSN 1749-4885, 12/2011, Volume 5, Issue 12, pp. 758 - 762
Non-reciprocal photonic devices, including optical isolators and circulators, are indispensible components in optical communication systems. However, the... 
CRYSTALS | MAGNETOOPTICAL PROPERTIES | WAVE-GUIDE ISOLATORS | PHYSICS, APPLIED | OPTICS | YTTRIUM-IRON-GARNET | Isolators | Semiconductors | Optical resonators | Footprints | Silicon | Devices | Circulation | Photonics
Journal Article
Nature Photonics, ISSN 1749-4885, 07/2008, Volume 2, Issue 7, pp. 433 - 437
Waveguide-integrated photonic modulators are crucial devices when encoding optical signals for electronic-photonic integration on silicon(1,2). Silicon... 
DESIGN | PHYSICS, APPLIED | SILICON ELECTROOPTIC MODULATOR | GERMANIUM | OPTICS | QUANTUM-WELLS | OPTICAL MODULATOR
Journal Article
JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, ISSN 1047-4838, 02/1995, Volume 47, Issue 2, pp. 74 - 75
Journal Article
Optics Communications, ISSN 0030-4018, 03/2014, Volume 314, pp. 41 - 47
In this paper, we present our efforts on studying light trapping in thin-film silicon solar cells using photonic crystal (PC) based structures. Specifically,... 
Solar cells | Light trapping | Self-assembly | Optimization | Photonic crystals | Thin-film silicon | EMITTING-DIODES | DESIGN | FUNDAMENTAL LIMIT | SILICON | REFLECTORS | POROUS ALUMINA | OPTICS | EFFICIENCY | Thin films | Solar batteries | Analysis | Crystals | Models | Dielectric films | Structure | Design engineering | Trapping | Surface layer | Silicon | Texture | Photonics
Journal Article
Progress in Biomedical Optics and Imaging - Proceedings of SPIE, ISSN 1605-7422, 2017, Volume 10061
Conference Proceeding
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 01/2010, Volume 16, Issue 1, pp. 124 - 131
It has been demonstrated theoretically and experimentally that germanium, with proper strain engineering and n-type doping, can be an efficient light emitter... 
Temperature | Photonic band gap | light emitters | Doping | Light emitting diodes | Capacitive sensors | Laser theory | Integrated optoelectronics | Heterojunctions | Germanium | Silicon | Optical fiber communication | silicon photonics | Silicon photonics | Light emitters | ROOM-TEMPERATURE | FILMS | BAND-GAP SHRINKAGE | OPTICS | GAIN | ENGINEERING, ELECTRICAL & ELECTRONIC | Band theory | Gain | Guidelines | Strain
Journal Article
Optics Express, ISSN 1094-4087, 08/2010, Volume 18, Issue 17, pp. 17631 - 17639
Journal Article
Optics Express, ISSN 1094-4087, 05/2012, Volume 20, Issue 10, pp. 11316 - 11320
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output... 
ROOM-TEMPERATURE | OPTICS | INTEGRATION | GAIN
Journal Article
Optics Letters, ISSN 0146-9592, 03/2010, Volume 35, Issue 5, pp. 679 - 681
Monolithic lasers on Si are ideal for high-volume and large-scale electronic-photonic integration. Ge is an interesting candidate owing to its pseudodirect gap... 
INTEGRATION | SILICON | OPTICAL-PROPERTIES | OPTICS | LIGHT-EMITTING DIODE | ELECTROLUMINESCENCE | GAIN
Journal Article
Optics Express, ISSN 1094-4087, 12/2007, Volume 15, Issue 25, pp. 16986 - 17000
Most photovoltaic (solar) cells are made from crystalline silicon (c-Si), which has an indirect band gap. This gives rise to weak absorption of one-third of... 
GRATINGS | ENHANCEMENT | DIOXIDE | SURFACE | ABSORPTION | OPTICS | LAYER | MAXWELLS EQUATIONS
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 1/2018, Volume 10622, pp. 1062204 - 1062204-7
Frequency comb generation in the mid-infrared (mid-IR)region is attractive recently. Here, we propose the Ge-on-Si microresonator for power-efficient frequency... 
Integrated optics devices | Nonlinear optics | Microcavities
Conference Proceeding
MRS Bulletin, ISSN 0883-7694, 08/2014, Volume 39, Issue 8, pp. 687 - 695
Fundamental latency and energy limitations are driving major changes in communication and computation hardware. Parallel multicore and multiprocessor... 
optoelectronic | packaging | diffusionCVD (deposition) | dislocations | laser | epitaxy | PHYSICS, APPLIED | WAVE-GUIDE | SI | MATERIALS SCIENCE, MULTIDISCIPLINARY | GE | Design engineering | Platforms | Computation | Neural networks | Electronics | Silicon | Density | Photonics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2009, Volume 95, Issue 1, pp. 011911 - 011911-3
Room temperature direct gap photoluminescence (PL) was observed from n -type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n -type... 
PHYSICS, APPLIED | GERMANIUM | TEMPERATURE | INTEGRATION | LASER
Journal Article
Optics Letters, ISSN 0146-9592, 04/2009, Volume 34, Issue 8, pp. 1198 - 1200
We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at... 
1.54 MU-M | FILMS | OPTICS | INTEGRATION | SILICON RAMAN LASER | GAIN
Journal Article
Nanophotonics, ISSN 2192-8606, 12/2017, Volume 7, Issue 2, pp. 393 - 420
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2011, Volume 110, Issue 8
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 09/2012, Volume 27, Issue 9, p. 94006
A silicon-based monolithic laser source has long been envisioned as a key enabling component for large-scale electronic-photonic integration in future... 
RECOMBINATION | PHYSICS, CONDENSED MATTER | INFRARED-ABSORPTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | OPTICAL-PROPERTIES | DOPED N-TYPE | ELECTROLUMINESCENCE | ENGINEERING, ELECTRICAL & ELECTRONIC | EPITAXIAL-FILMS | GERMANIUM | BAND-GAP SHRINKAGE | EMISSION | GAIN
Journal Article
Optics Express, ISSN 1094-4087, 09/2007, Volume 15, Issue 18, pp. 11272 - 11277
We analyze the optical gain of tensile-strained, n-type Ge material for Si-compatible laser applications. The band structure of unstrained Ge exhibits indirect... 
PHOTODETECTORS | INFRARED-ABSORPTION | PERFORMANCE | SILICON | OPTICAL-PROPERTIES | P-TYPE GERMANIUM | OPTICS | BAND-GAP | ELECTROLUMINESCENCE
Journal Article