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IEEE Electron Device Letters, ISSN 0741-3106, 04/2013, Volume 34, Issue 4, pp. 502 - 504
In this letter, we presented that the charge quantity is the critical factor for forming process. Forming is a pivotal process in resistance random access... 
Resistance | Electrodes | Forming process | resistance switching | Switches | Tin | Educational institutions | Silicon | Hafnium compounds | hafnium oxide ( \hbox{HfO}_{2}) | nonvolatile memory | ) | hafnium oxide ( HfO | MEMORY | hafnium oxide (HfO2) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2013, Volume 34, Issue 3, pp. 399 - 401
Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide... 
Resistance | Electrodes | resistive switch | Filament | Switches | Tin | Zinc oxide | silicon oxide | Silicon | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Materials Today, ISSN 1369-7021, 06/2016, Volume 19, Issue 5, pp. 254 - 264
Non-volatile memory (NVM) will play a decisive role in the development of the next-generation of electronic products. Therefore, the development of... 
ELECTROLYTE-BASED RERAM | HFO2-BASED RRAM | INDIUM-TIN-OXIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | THIN-FILM TRANSISTORS | RESISTIVE SWITCHING CHARACTERISTICS | DEVICES | NONVOLATILE MEMORY | CO2 FLUID TREATMENT | CONDUCTIVE FILAMENTS | METAL-OXIDES | Electrical engineering | Energy conservation | Flash memory | Electric properties
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2012, Volume 33, Issue 12, pp. 1696 - 1698
In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped... 
Resistance | Nonvolatile memory | Doping | Tin | silicon oxide | Nickel | Silicon | Dielectrics | Nonvolatile memory (NVM) | resistive switching | nickel | RRAM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2015, Volume 36, Issue 12, pp. 1321 - 1324
We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive switching memory. Because of the different chemical activities between... 
Electrodes | Resistance | Silver | Galvanic effect | Gold alloys | Random access memory | RRAM | Ag-Au electrode | RRAM DEVICES | INDIUM-TIN-OXIDE | RETENTION | MEMRISTOR | ENGINEERING, ELECTRICAL & ELECTRONIC | OXYGEN | RANDOM-ACCESS MEMORY | HYDROGEN | RESISTANCE | IMPROVEMENT | SUPERCRITICAL CO2 FLUID
Journal Article
Nano Letters, ISSN 1530-6984, 02/2014, Volume 14, Issue 2, pp. 813 - 818
We report on a highly compact, one diode–one resistor (1D–1R) nanopillar device architecture for SiO x -based ReRAM fabricated using nanosphere lithography... 
SiO | 1D-1R | ReRAM | Nanosphere Lithography | nanopillar
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2014, Volume 35, Issue 6, pp. 630 - 632
In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO 2 ) resistance... 
Electrodes | Resistance | Indium tin oxide | Schottky emission | Switches | Tin | Educational institutions | Silicon | RRAM | Oxygen accumulation | indium tin oxide | RESISTIVE SWITCHING MEMORIES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2014, Volume 104, Issue 10, p. 103501
This study investigates the electrical instability under negative gate bias stress (NGBS) induced by surface hydrolysis effect. Electrical characteristics... 
PHYSICS, APPLIED | NONVOLATILE MEMORY | OXIDE | LAYER | Semiconductor devices | Computer simulation | Bias | Thin film transistors | Hydrolysis | Degradation | Indium gallium zinc oxide | Partial pressure | Hydrogen ions | Computer aided design--CAD | Zinc oxide | Surface stability | Transistors
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2013, Volume 102, Issue 17, p. 172903
In this study, we have observed dynamic switching behaviors in a memristive device. There are only a few atoms in the resistive switching reaction which... 
PHYSICS, APPLIED | RRAM | MEMORY | CO2 FLUID TREATMENT
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2012, Volume 33, Issue 4, pp. 540 - 542
Journal Article
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2013, Volume 34, Issue 5, pp. 677 - 679
In this letter, a double-active-layer (Zr:SiO x /C:SiO x ) resistive switching memory device with a high on/off resistance ratio and small working current... 
Resistance | Electrodes | Conduction | graphene oxide | Nonvolatile memory | Graphene | redox reaction | Switches | Tin | resistance random access memory (RRAM) | Silicon | hopping | conduction | RRAM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2012, Volume 33, Issue 12, pp. 1693 - 1695
In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical... 
resistance random access memory (RRAM) | hydration-dehydration reaction | supercritical fluid | Hopping conduction | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 217 - 219
In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more... 
Resistance | Hydrogen | tri-resistive states | Switches | Educational institutions | Ions | Silicon | RRAM | Plasmas | resistive switching | hydrogen | ORIGIN | HOPPING CONDUCTION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article