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Journal of Applied Physics, ISSN 0021-8979, 02/2016, Volume 119, Issue 7
The 8-band kp Hamiltonian is applied to calculate electronic band structure and material gain in III-V-Bi quantum wells (QWs) grown on GaSb substrates. We... 
Quantum confinement | Band structure | Red shift | Deformation | Gallium antimonides | Quantum wells | Ternary alloys | Infrared spectra | Valence band | Substrates | Lattice matching | Compressive properties | Band structure of solids | Mathematical analysis
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2015, Volume 118, Issue 5
The electronic band structure and material gain have been calculated for GaAsBi/GaAs quantum wells (QWs) with various bismuth concentrations (Bi ≤ 15%) within... 
Band structure | Parameters | Gallium arsenide | Quantum wells | Valence band | Substrates | Energy gap | Dilution | Compressive properties | Band structure of solids | Lasers | Indium phosphides | Bismuth | Mathematical models | Carrier density
Journal Article
physica status solidi (b), ISSN 0370-1972, 07/2010, Volume 247, Issue 7, pp. 1616 - 1621
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2018, Volume 8, Issue 1, pp. 1 - 10
We report high-pressure Raman-scattering measurements on the transition-metal dichalcogenide (TMDC) compound HfS2. The aim of this work is twofold: (i) to... 
OPTICAL-PROPERTIES | MONOLAYER | SPECTRUM | MULTIDISCIPLINARY SCIENCES | Compression | Compressibility | Molybdenum disulfide | Pressure | Metalls de transició | Transition metals | Espectroscòpia Raman | Raman spectroscopy
Journal Article
Journal Article
Review of Scientific Instruments, ISSN 0034-6748, 2009, Volume 80, Issue 9, p. 096103
Experimental setup for measurements of photoreflectance (PR) and contactless electroreflectance (CER) spectra in bright and dark configurations is described in... 
SPECTROSCOPY | INSTRUMENTS & INSTRUMENTATION | PHYSICS, APPLIED
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2007, Volume 101, Issue 2
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2010, Volume 312, Issue 18, pp. 2499 - 2502
In this paper we present progress made recently in the development of the growth of truly bulk GaN crystals by the ammonothermal method in basic environment.... 
A2. Metalorganic vapor phase epitaxy | A2. Growth from solutions | B1. Nitrides | B2. Semiconducting III-V materials | Semiconducting III-V materials | Nitrides | AMMONOTHERMAL GAN | PRESSURE | HVPE | Growth from solutions | PLANE | Metalorganic vapor phase epitaxy | CRYSTALLOGRAPHY | LAYERS | Epitaxy | Methods
Journal Article
Scientific Reports, ISSN 2045-2322, 05/2016, Volume 6, Issue 1, p. 26663
The electronic band structure of MoS2, MoSe2, WS2, and WSe2, crystals has been studied at various hydrostatic pressures experimentally by photoreflectance (PR)... 
PHOTOREFLECTANCE | DENSITY | ELECTRONIC-PROPERTIES | SPECTROSCOPY | SINGLE-LAYER | MULTIDISCIPLINARY SCIENCES | DICHALCOGENIDES | Spectroscopy | Pressure | Spectrum analysis | Crystals | Computer applications
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 01/2007, Volume 101, Issue 2, p. 23522
It has been shown that the band gap energy of dilute nitride ternary alloys (Ga1-yInyNxAs1-x in this case) can be predicted by knowing the band gap energy for... 
ANTICROSSING MODEL | PHYSICS, APPLIED | QUANTUM-WELL STRUCTURES | SEMICONDUCTORS | NITROGEN | OPTICAL-TRANSITIONS | N-CONTENT | ELECTRONIC-STRUCTURE | DEPENDENCE | GAINNAS | LAYERS
Journal Article
Scientific Reports, ISSN 2045-2322, 2017, Volume 7, Issue 1, p. 41877
The Fermi level position in (Ga,Mn)N has been determined from the period-analysis of GaN-related Franz-Keldysh oscillation obtained by contactless... 
ORIGIN | CONTACTLESS ELECTROREFLECTANCE | SPECTROSCOPY | GAN | MN ACCEPTOR | MULTIDISCIPLINARY SCIENCES | FERROMAGNETISM | SURFACE | MAGNETIC SEMICONDUCTORS | OPTICAL-TRANSITIONS | LAYERS | Band gap | Electrons | Manganese | Physics - Materials Science
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 02/2018, Volume 33, Issue 3, p. 35007
Photoacoustic (PA) measurements have been performed on a series of InxGa1-xN thin films grown with x > 50%. In order to illustrate the usefulness of this... 
InGaN | contactless electroreflectance | photoacoustic spectroscopy | photothermal spectroscopy | bowing parameter | PHYSICS, CONDENSED MATTER | HETEROSTRUCTURES | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | INN | ENGINEERING, ELECTRICAL & ELECTRONIC | LIGHT-EMITTING-DIODES | IN1-XGAXN ALLOYS | OPTICAL-ABSORPTION
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2019, Volume 126, Issue 14, p. 141102
The electronic band structure of highly mismatched alloys (HMAs) was very successfully explored using electromodulation (EM) spectroscopy, i.e.,... 
PHOTOREFLECTANCE SPECTROSCOPY | PHYSICS, APPLIED | SEMICONDUCTOR HETEROSTRUCTURES | CONTACTLESS ELECTROREFLECTANCE | MODULATION SPECTROSCOPY | TEMPERATURE-DEPENDENCE | ELECTRON EFFECTIVE-MASS | GAINNAS/GAAS QUANTUM-WELLS | FRANZ-KELDYSH OSCILLATIONS | OPTICAL-TRANSITIONS | BAND-GAP
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2011, Volume 109, Issue 6, pp. 063528 - 063528-6
Room temperature contactless electroreflectance (CER) has been applied to study optical transitions and the distribution of the built-in electric field in... 
QUANTUM-WELL | 2-DIMENSIONAL ELECTRON-GAS | PHYSICS, APPLIED | MOBILITY TRANSISTOR STRUCTURES | MODULATION SPECTROSCOPY | Thermal properties | Aluminum compounds | Structure | Gallium nitrate | Optical properties | Electric properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2019, Volume 126, Issue 17
The electronic band structure of Ga(PAsN) with a few percent of nitrogen is calculated in the whole composition range of Ga(PAs) host using density functional... 
Solar cells | Conduction bands | Energy gap | Dilution | Band structure of solids | Photovoltaic cells | Brillouin zones | Banded structure | Optoelectronic devices | Emitters | Localization | Nitrogen
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 02/2012, Volume 27, Issue 2, p. 024007
In this paper we review the developments of producing non-polar (i.e. m-plane and a-plane) and semi-polar (i.e. (20.1)-plane) wafers by ammonothermal method.... 
III-NITRIDES | PHYSICS, CONDENSED MATTER | CONTACTLESS ELECTROREFLECTANCE | SPECTROSCOPY | CRYSTAL-GROWTH | BULK GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | 2-DIMENSIONAL ELECTRON-GAS | SUPERCRITICAL AMMONIA | ALGAN/GAN HETEROSTRUCTURES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
physica status solidi (b), ISSN 0370-1972, 05/2015, Volume 252, Issue 5, pp. 1038 - 1042
Contactless electroreflectance spectroscopy has been applied to study the surface potential barrier in AlxGa1−xN/n‐AlxGa1−xN structures with 0 ≤ x ≤ 0.25 grown... 
modulation spectroscopy | surface potential | Fermi level | electroreflectance | AlGaN | Electroreflectance | Modulation spectroscopy | Surface potential | GA-FACE | PHYSICS, CONDENSED MATTER | HETEROSTRUCTURES | 2-DIMENSIONAL ELECTRON GASES | Vapor phase epitaxy | Aluminum | Mathematical analysis | Gallium nitrides | Solid state physics | Aluminum gallium nitrides | Electric fields | Potential barriers
Journal Article
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, ISSN 1077-260X, 11/2019, Volume 25, Issue 6
Material gain is calculated for polar staggered AlxGa1-xNAlN quantum wells (QWs) of various architectures: i) with a step-like AlyGa1-yN barrier grown prior... 
LIGHT-EMITTING-DIODES | INACTIVATION | QUANTUM SCIENCE & TECHNOLOGY | PHYSICS, APPLIED | modeling | ENHANCEMENT | OPTICAL GAIN | OPTICS | Gain | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2019, Volume 125, Issue 20
In this work, we present a detailed investigation of the low temperature emission properties of ZnSeO alloys by means of photoluminescence,... 
Trapping | Excitons | Emission analysis | Photoluminescence | Oxygen content
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2014, Volume 116, Issue 23, p. 233508
Band gap alignment in GaAs1-xBix/GaAs quantum wells (QWs) was studied experimentally by photoreflectance (PR) and theoretically, ab initio, within the density... 
PHOTOREFLECTANCE SPECTROSCOPY | PSEUDOPOTENTIALS | STATES | PHYSICS, APPLIED | ALLOYS | SEMICONDUCTORS | MOLECULAR-BEAM EPITAXY | GROWTH | OFFSET
Journal Article
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