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IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 212 - 215
Depletion-mode field-plated Ga 2 O 3 metal-oxide-semiconductor field-effect transistors were demonstrated for the first time. Substantial enhancement in... 
Logic gates | MOSFET | Electric breakdown | Dielectrics | Object recognition | Electric fields | FILMS | field plate | current collapse | BETA-GA2O3 | breakdown | Ga2O3 | power device | dispersion | high temperature | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 01/2012, Volume 100, Issue 1, p. 13504
We report a demonstration of single-crystal gallium oxide (Ga2O3) metal-semiconductor field-effect transistors (MESFETs). A Sn-doped Ga2O3 layer was grown on a... 
GAN | PHYSICS, APPLIED | GROWTH
Journal Article
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 21 - 26
Gallium oxide (Ga2O3) is a strong contender for power electronic devices. The material possesses excellent properties such as a large bandgap of 4.7-4.9eV for... 
field‐effect transistors | molecular beam epitaxy | Schottky barrier diodes | MESFET | power devices | field-effect transistors | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Ga2O3 | GAN | GROWTH | BETA-GA2O3 SINGLE-CRYSTALS | EDGE | Single crystals | Gallium oxides | Electronic devices | Semiconductors | Epitaxy | Breakdown | Molecular beam epitaxy | MESFETs
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 10/2018, Volume 51, Issue 5, pp. 1372 - 1377
Planar defects in ‐oriented β‐Ga 2 O 3 wafers were studied using X‐ray topography. These planar defects were rectangular with dimensions of 50–150 µm, and the... 
X‐ray topography | slip planes | stacking faults | partial dislocations | Partial dislocations | Stacking faults | Slip planes | X-ray topography | SLIP | CRYSTALLOGRAPHY | CHEMISTRY, MULTIDISCIPLINARY | Crystal growth | Gallium oxides | Crystal defects | Stacking | Topography | Elastic recovery | Crystals | Elastic instability | Dislocation loops | Crystal structure | Dislocation
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 07/2017, Volume 50, Issue 33, p. 333002
Gallium oxide (Ga2O3) has gained increased attention for power devices due to its superior material properties and the availability of economical... 
gallium oxide | field effect transistor | power device | Schottky barrier diode | THIN-FILMS | VAPOR-PHASE EPITAXY | PHYSICS, APPLIED | MOLECULAR-BEAM EPITAXY | MOVPE | LAYERS | CZOCHRALSKI METHOD | GAN | GROWTH | BETA-GA2O3 SINGLE-CRYSTALS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 103506
Ga2O3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n(-)-Ga2O3 drift layer grown by halide vapor phase epitaxy on a Sn-doped... 
ALGAN/GAN HEMTS | VOLTAGE | PHYSICS, APPLIED
Journal Article
Journal of applied crystallography, ISSN 0021-8898, 10/2018, Volume 51, Issue Pt 5, p. 1372
Planar defects in -oriented β-Ga O wafers were studied using X-ray topography. These planar defects were rectangular with dimensions of 50-150 µm, and the... 
Journal Article
Journal of Applied Crystallography, ISSN 0021-8898, 10/2018, Volume 51, Issue 5, p. 1372
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2012, Volume 100, Issue 1
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2015, Volume 106, Issue 11, p. 111909
The thermal conductivities of beta-Ga2O3 single crystals along four different crystal directions were measured in the temperature range of 80-495K using the... 
GAN | PHYSICS, APPLIED | BETA-GA2O3 | Single crystals | First principles | Gallium oxides | Anisotropy | Crystals | Time domain analysis | Conductivity | Thermal conductivity | Heat conductivity | Heat transfer | Physics - Materials Science
Journal Article
Proceedings of the National Academy of Sciences of the United States of America, ISSN 0027-8424, 11/2012, Volume 109, Issue 47, pp. 19166 - 19171
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2013, Volume 378, pp. 591 - 595
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 01/2016, Volume 31, Issue 3
This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices. Ga2O3 possesses... 
gallium oxide | molecular beam epitaxy | edge-defined film-fed growth | power devices | halide vapor phase epitaxy | THIN-FILMS | PHYSICS, CONDENSED MATTER | CHEMICAL-VAPOR-DEPOSITION | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | Ga2O3 | ENGINEERING, ELECTRICAL & ELECTRONIC | GAN | GROWTH | BETA-GA2O3 SINGLE-CRYSTALS | ABSORPTION | EDGE
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 12/2016, Volume 55, Issue 12
beta-Ga2O3 bulk crystals were grown by the edge-defined film-fed growth (EFG) process and the floating zone process. Semiconductor substrates containing no... 
THIN-FILMS | GALLIUM OXIDE | PHYSICS, APPLIED | CONDUCTIVITY | GA2O3 | SENSORS | TRANSPARENT
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2014, Volume 104, Issue 19, p. 192104
The band alignment of Al2O3/n-Ga2O3 was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8+/-0.2 eV measured for Al2O3, the... 
PHYSICS, APPLIED | FILMS | BORDER TRAPS | GROWTH | DEVICES | BETA-GA2O3 SINGLE-CRYSTALS | EDGE | Conduction bands | Electrical properties | Valence band | Hysteresis loops | Offsets | Aluminum oxide | Metal oxides | Gallium oxides | Alignment | Organic light emitting diodes | Heterojunctions | X ray photoelectron spectroscopy | X ray spectra | Electrons
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2017, Volume 38, Issue 6, pp. 783 - 785
We developed β-Ga 2 O 3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy... 
Schottky diodes | Ga₂O | Trench MOS | Schottky barriers | Crystals | Leakage currents | Schottky barrier diode | Anodes | Substrates | TRANSISTORS | BETA-GA2O3 | CRYSTALS | Ga2O3 | DEVICES | EDGE | ENGINEERING, ELECTRICAL & ELECTRONIC | Single crystals | Vapor phase epitaxy | Gallium oxides | Barriers | Organic light emitting diodes | Hafnium oxide | Leakage current | Epitaxial growth | Photolithography | Crystal structure
Journal Article
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