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ACM Journal on Emerging Technologies in Computing Systems (JETC), ISSN 1550-4832, 05/2013, Volume 9, Issue 2, pp. 1 - 20
Journal Article
IBM journal of research and development, ISSN 0018-8646, 2008, Volume 52, Issue 4.5, pp. 449 - 464
Journal Article
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, ISSN 1071-1023, 2014, Volume 32, Issue 4
The emergence of new nonvolatile memory (NVM) technologies-such as phase change memory, resistive, and spin-torque-transfer magnetic RAM-has been motivated by... 
PHYSICS, APPLIED | ARRAY | SELECTOR | RESISTANCE | HIGH-CURRENT-DENSITY | NANOSCIENCE & NANOTECHNOLOGY | NONVOLATILE MEMORY | SWITCH | DIODE | ANTIFUSE | BIPOLAR RRAM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Semiconductor science and technology, ISSN 0268-1242, 10/2014, Volume 29, Issue 10, p. 104005
Several attractive applications call for the organization of memristive devices (or other resistive non-volatile memory (NVM)) into large, densely-packed... 
memristive devices | access devices | MIEC | nonvolatile memory | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2011, Volume 110, Issue 5, pp. 054501 - 054501-12
We assess voltage polarity effects in phase-change memory (PCM) devices that contain Ge 2 Sb 2 Te 5 (GST) as the active material through the study of... 
Journal Article
Materials Research Society Symposium Proceedings, ISSN 0272-9172, 2015, Volume 1729, pp. 3 - 14
Conference Proceeding
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 09/2011, Volume 110, Issue 5, p. 54501
We assess voltage polarity effects in phase-change memory (PCM) devices that contain Ge2Sb2Te5 (GST) as the active material through the study of vertically... 
MECHANISM | PHYSICS, APPLIED | RELIABILITY
Journal Article
IEEE Journal on Emerging and Selected Topics in Circuits and Systems, ISSN 2156-3357, 09/2016, Volume 6, Issue 3, pp. 330 - 338
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 09/2015, Volume 3, Issue 5, pp. 423 - 434
Large-scale 3-D crossbar arrays offer a path to both high-density storage class memory and novel non-Von Neumann computation. However, such arrays require each... 
Resistance | Power demand | Nonvolatile memory | Switches | IEEE Electron Devices Society | SPICE | Integrated circuit modeling | 1AD1R | 1S1R | access device | circuit simulation | non-volatile memory | selector | crossbar memory | MIEC | SYSTEM | ENGINEERING, ELECTRICAL & ELECTRONIC | DATA-STORAGE | MEMORY | POINT
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2002, Volume 4904, pp. 80 - 87
Conference Proceeding
Macromolecules, ISSN 0024-9297, 04/1997, Volume 30, Issue 7, pp. 1929 - 1934
The autopolymerization of styrene, styrenic derivatives, and styrene/(meth)acrylate comonomer mixtures in the presence of stable nitroxide free radicals has... 
POLYMERS | POLYMER SCIENCE | K UY POLYMER SCIENCE | STAR | RESINS
Journal Article
07/2009
A read sensor for a magneto resistive head is formed through the use of a bilayer lift-off mask. According to one embodiment, a release layer is formed on top... 
Patent
05/2007
A process to reduce step heights in planarization of thin film carriers in an encapsulation system. The improvements include using an adhesive tape having a... 
Patent
05/2007
A process to reduce step heights in planarization of thin film carriers in an encapsulation system. The improvements include using an adhesive tape having a... 
INFORMATION STORAGE | PRODUCING DECORATIVE EFFECTS | TARSIA WORK | TRANSPORTING | DECORATIVE ARTS | PAPERHANGING | MOSAICS | PHYSICS | PERFORMING OPERATIONS | INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER
Patent
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