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Journal of Applied Physics, ISSN 0021-8979, 08/2010, Volume 108, Issue 4, pp. 043504 - 043504-7
Al-doped ZnO (AZO) films of ∼ 100   nm thickness with various Al doping were prepared at 150 ° C by atomic layer deposition on quartz substrates. At low Al... 
THIN-FILMS | ALUMINUM | PHYSICS, APPLIED | TRANSPARENT | ZINC-OXIDE | GROWTH | Atomic force microscopy | Evaluation | Usage | Electrical conductivity | Diffraction | Aluminum | Optical properties | Analysis | X-rays | Zinc oxide | Semiconductor doping | Electric properties
Journal Article
Science, ISSN 0036-8075, 4/2014, Volume 344, Issue 6181, pp. 286 - 289
The uniform growth of single-crystal graphene over wafer-scale areas remains a challenge in the commercial-level manufacturability of various electronic,... 
Grain boundaries | Metric photography | Nucleation | Graphene | Raman scattering | Illustration | REPORTS | Images | Electronics | Germanium | Semiconductor wafers | TRANSPORT | EPITAXIAL GRAPHENE | CARBON | MULTIDISCIPLINARY SCIENCES | SILICON | SURFACE | COPPER | LAYERS | Engineering research | Growth | Anisotropy | Research | Properties | Water | Single crystals | Hydrogen | Carbon | Germination
Journal Article
Nature, ISSN 0028-0836, 06/2016, Volume 534, Issue 7608, pp. 553 - 557
Journal Article
Bioresource Technology, ISSN 0960-8524, 2011, Volume 102, Issue 10, pp. 5884 - 5890
Journal Article
International Journal of Thermal Sciences, ISSN 1290-0729, 01/2015, Volume 87, pp. 49 - 67
Journal Article
The New England Journal of Medicine, ISSN 0028-4793, 03/2015, Volume 372, Issue 13, pp. 1204 - 1212
Journal Article