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Photochemical & Photobiological Sciences, ISSN 1474-905X, 07/2002, Volume 1, Issue 7, pp. 459 - 467
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, pp. 310 - 313
Journal Article
Liver International, ISSN 1478-3223, 05/2017, Volume 37, Issue 5, pp. 678 - 683
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 05/2019, Volume 37, Issue 10, pp. 2311 - 2316
Journal Article
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, p. 310
  In this letter, we identified a dominant buffer trapping causing a bias-dependent dynamic [Formula Omitted] for AlGaN/GaN Schottky barrier diodes (SBDs)... 
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, pp. 310 - 313
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2016, Volume 37, Issue 3, pp. 310 - 313
In this letter, we identified a dominant buffer trapping causing a bias-dependent dynamic R ON for AlGaN/GaN Schottky barrier diodes (SBDs) fabricated on a... 
Schottky diodes | current collapse | dynamic RON | Time-domain analysis | Time-varying systems | AlGaN/GaN | Electron traps | SBD | TLM | buffer trapping | Wide band gap semiconductors | trap spectra | Aluminum gallium nitride | HEMTS | dynamic R-ON | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
by Di Maio, Velia C and Cento, Valeria and Lenci, Ilaria and Aragri, Marianna and Rossi, Piera and Barbaliscia, Silvia and Melis, Michela and Verucchi, Gabriella and Magni, Carlo F and Teti, Elisabetta and Bertoli, Ada and Antonucci, FrancescoPaolo and Bellocchi, Maria C and Micheli, Valeria and Masetti, Chiara and Landonio, Simona and Francioso, Simona and Santopaolo, Francesco and Pellicelli, Adriano M and Calvaruso, Vincenza and Gianserra, Laura and Siciliano, Massimo and Romagnoli, Dante and Cozzolongo, Raffaele and Grieco, Antonio and Vecchiet, Jacopo and Morisco, Filomena and Merli, Manuela and Brancaccio, Giuseppina and Di Biagio, Antonio and Loggi, Elisabetta and Mastroianni, Claudio M and Pace Palitti, Valeria and Tarquini, Pierluigi and Puoti, Massimo and Taliani, Gloria and Sarmati, Loredana and Picciotto, Antonino and Vullo, Vincenzo and Caporaso, Nicola and Paoloni, Maurizio and Pasquazzi, Caterina and Rizzardini, Giuliano and Parruti, Giustino and Craxì, Antonio and Babudieri, Sergio and Andreoni, Massimo and Angelico, Mario and Perno, Carlo F and Ceccherini‐Silberstein, Francesca and Mariani, R and Iapadre, N and Grimaldi, A and Cozzolongo, R and Andreone, P and Verucchi, G and Menzaghi, B and Quirino, T and Pisani, V and Torti, C and Vecchiet, J and Bruzzone, B and De Maria, A and Marenco, S and Nicolini, L.A and Viscoli, C and Casinelli, K and Delle Monache, M and Lichtner, M and Aghemo, A and Boccaccio, V and Bruno, S and Cerrone, M and Colombo, M and D'Arminio Monforte, A and Danieli, E and Donato, F and Gubertini, G and Lleo, A and Magni, C.F and Mancon, A and Monico, S and Niero, F and Russo, M.L and Gnocchi, M and Orro, A and Milanesi, L and Baldelli, E and Bertolotti, M and Borghi, V and Mussini, C and Brancaccio, G and Gaeta, G.B and Lembo, V and Sangiovanni, V and Di Marco, V and Mazzola, A and Petta, S and D'Amico, E and Cacciatore, P and ... and HCV Italian Resistance Network Stu and HCV Italian Resistance Network Study Group and the HCV Italian Resistance Network Study Group
Liver International, ISSN 1478-3223, 04/2017, Volume 37, Issue 4, pp. 514 - 528
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 8, pp. 1035 - 1037
High-performance AlGaN/GaN diodes are realized on 8-in Si wafers with Au-free CMOS-compatible technology. The diodes are cointegrated on the same substrate... 
edge termination | AlGaN/GaN Schottky diode | power rectifier | Au-free GaN-on-Si | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
physica status solidi (c), ISSN 1862-6351, 04/2014, Volume 11, Issue 3‐4, pp. 862 - 865
AlGaN/GaN Schottky barrier diodes (SBDs) have been fabricated on GaN‐on‐Si wafers (8‐inch) with Au‐free CMOS compatible technology. Two types of Edge... 
edge termination | leakage current | forward voltage | Schottky barrier diode | AlGaN/GaN‐on‐Si | Leakage current | Edge termination | AlGaN/GaN-on-Si | Forward voltage | Terminations | Electric potential | Reduction | Gallium nitrides | Wafers | Aluminum gallium nitrides | Anodes
Journal Article
BMC nephrology, ISSN 1471-2369, 2018, Volume 19, Issue 1, pp. 260 - 9
Journal Article
by Di Maio, Velia Chiara and Cento, Valeria and Aragri, Marianna and Paolucci, Stefania and Pollicino, Teresa and Coppola, Nicola and Bruzzone, Bianca and Ghisetti, Valeria and Zazzi, Maurizio and Brunetto, Maurizia and Bertoli, Ada and Barbaliscia, Silvia and Galli, Silvia and Gennari, William and Baldanti, Fausto and Raimondo, Giovanni and Perno, Carlo Federico and Ceccherini-Silberstein, Francesca and Andreone, Pietro and Andreoni, Massimo and Angelico, Mario and Babudieri, Sergio and Barbarini, Giorgio and Boccaccio, Vincenzo and Boglione, Lucio and Bolis, Matteo and Bonora, Stefano and Borghi, Vanni and Brancaccio, Giuseppina and Bruno, Savino and Cacciatore, Pierluigi and Calvaruso, Vincenza and Caporaso, Nicola and Ciaccio, Antonio and Ciancio, Alessia and Colombatto, Piero and Cozzolongo, Raffaele and Craxì, Antonio and D'Ambrosio, Cecilia and D'Ettorre, Gabriella and De Luca, Andrea and Di Biagio, Antonio and Di Perri, Giovanni and Francioso, Simona and Gaeta, Giovanni Battista and Giorgini, Alessia and Grieco, Antonio and Gubertini, Guido and Gulminetti, Roberto and Lambiase, Lara and Lenci, Ilaria and Lichtner, Miriam and Maida, Ivana and Marenco, Simona and Marinaro, Letizia and Maserati, Renato and Masetti, Chiara and Melis, Michela and Meregalli, Elisa and Micheli, Valeria and Morisco, Filomena and Niero, Fosca and Nicolini, Laura Ambra and Palitti, Valeria Pace and Paoloni, Maurizio and Parruti, Giustino and Pasquazzi, Caterina and Pellicelli, Adriano and Polilli, Ennio and Ponti, Maria Laura and Puoti, Massimo and Rendina, Maria and Rizzardini, Giuliano and Rossetti, Barbara and Ruggiero, Tina and Sangiovanni, Vincenzo and Starace, Mario and Sticchi, Laura and Tarquini, Pierluigi and Toniutto, Pierluigi and Vullo, Vincenzo and HCV Virology Italian Resistance Network (VIRONET-C)
Journal of Hepatology, ISSN 0168-8278, 03/2018, Volume 68, Issue 3, pp. 597 - 600
Journal Article
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, ISSN 0953-4075, 04/2019, Volume 52, Issue 8, p. 85002
The use of electromagnetically induced absorption (EIA) in sensing and metrology has been thus far hindered by saturation effects, which severely degrade its... 
Zeeman effect | INDUCED TRANSPARENCY | line shapes and shifts | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | electromagnetically induced absorption | COHERENT | Ramsey fringes | TRANSITIONS | OPTICS | RESONANCES
Journal Article
physica status solidi (a), ISSN 1862-6300, 05/2016, Volume 213, Issue 5, pp. 1229 - 1235
We investigate the DC and dynamic characteristics of AlGaN/GaN Schottky barrier diodes (SBDs) and the diodes with a gated edge termination (GET‐SBD) fabricated... 
doping | buffer layers | current transient spectroscopy | Schottky diodes | GaN | Charge trapping | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | charge trapping | Circuit components | Leakage | Degradation | Trapping | Gallium nitrides | Aluminum gallium nitrides | Buffers | Diodes
Journal Article