X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
electricity (37) 37
basic electric elements (31) 31
ingaas (31) 31
electric solid state devices not otherwise provided for (29) 29
semiconductor devices (29) 29
dark current (22) 22
general tagging of cross-sectional technologies spanning over several sections of the ipc (18) 18
general tagging of new technological developments (18) 18
technical subjects covered by former uspc cross-reference art collections [xracs] and digests (18) 18
technologies or applications for mitigation or adaptation againstclimate change (18) 18
climate change mitigation technologies in the production orprocessing of goods (16) 16
physics (16) 16
physics, applied (14) 14
measuring (12) 12
testing (12) 12
extended wavelength (11) 11
index medicus (11) 11
materials science, multidisciplinary (11) 11
dunkelstrom (10) 10
optics (10) 10
passivation (10) 10
concrete (9) 9
performing operations (9) 9
photodiode (9) 9
transporting (9) 9
analysis (8) 8
chemical vapor deposition (8) 8
engineering, electrical & electronic (8) 8
instruments & instrumentation (8) 8
detectors (7) 7
photodiodes (7) 7
spannung (7) 7
wellenlänge (7) 7
china (6) 6
female (6) 6
indium-gallium-arsenid (6) 6
male (6) 6
risk (6) 6
tuberculosis (6) 6
adolescent (5) 5
adult (5) 5
bias (5) 5
humans (5) 5
indium gallium arsenides (5) 5
infections (5) 5
machine tools (5) 5
metal-working not otherwise provided for (5) 5
noise (5) 5
power demand (5) 5
relays (5) 5
resource management (5) 5
temperature (5) 5
throughput (5) 5
young adult (5) 5
aged (4) 4
arrays (4) 4
ceramics (4) 4
chemistry (4) 4
china - epidemiology (4) 4
decode-and-forward (4) 4
gaas (4) 4
green communication (4) 4
human necessities (4) 4
icpcvd (4) 4
induktiv gekoppeltes plasma (4) 4
infrared (4) 4
infrared detector (4) 4
ingaas detector (4) 4
integrated circuit modeling (4) 4
interferon (4) 4
investigating or analysing materials by determining theirchemical or physical properties (4) 4
leakage current (4) 4
mathematical models (4) 4
measuring electric variables (4) 4
measuring magnetic variables (4) 4
metallurgy (4) 4
middle aged (4) 4
ohmic contact (4) 4
optimal power allocation (4) 4
passivierung (4) 4
physics, condensed matter (4) 4
prevalence (4) 4
throughput maximization (4) 4
water resources (4) 4
artificial stone (3) 3
bandwidth (3) 3
barriers (3) 3
cements (3) 3
chemisches aufdampfen (3) 3
child (3) 3
child, preschool (3) 3
colorimetry (3) 3
compositions thereof, e.g. mortars, concrete or like buildingmaterials (3) 3
crosstalk (3) 3
density (3) 3
devices (3) 3
diagnosis (3) 3
diodes (3) 3
electric communication technique (3) 3
electric potential (3) 3
more...
Library Location Library Location
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


IEEE Transactions on Wireless Communications, ISSN 1536-1276, 09/2017, Volume 16, Issue 9, pp. 6091 - 6104
Journal Article
日语学习与研究, ISSN 1002-4395, 2017, Issue 2, pp. 112 - 119
Journal Article
日本问题研究, ISSN 1004-2458, 2015, Volume 29, Issue 6, pp. 28 - 36
Journal Article
PLoS ONE, ISSN 1932-6203, 04/2017, Volume 12, Issue 4, p. e0175183
Journal Article
by Ji, XL and Liu, BQ and Xu, Y and Tang, HJ and Li, X and Gong, HM and Shen, B and Yang, XL and Han, P and Yan, F
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 12/2013, Volume 114, Issue 22, p. 224502
The dark current mechanism of extended wavelength InxGa1-xAs photo-detectors is still a debated issue. In this paper, the deep-level transient spectroscopy... 
PHYSICS, APPLIED | FE ACCEPTOR LEVEL | BUFFER | INGAAS | LAYERS | Dark current | Sensors | Current voltage characteristics | Deep level transient spectroscopy | Bias | Photometers
Journal Article
AIP Advances, ISSN 2158-3226, 2014, Volume 4, Issue 8, pp. 87135 - 087135-7
We fabricate 2.6 μm InGaAs photodetectors by MBE technology and study its dark current mechanisms. Deep-level transient spectroscopy (DLTS) demonstrates a... 
Computer simulation | Dark current | Deep level transient spectroscopy
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2015, Volume 118, Issue 3, p. 34507
We investigate surface passivation effects of SiNx films deposited by inductive coupled plasma chemical vapor deposition (ICPCVD) and plasma enhanced chemical... 
DENSITY | SILICON-NITRIDE | PHYSICS, APPLIED | PHOTODETECTORS | TEMPERATURE | GAP | SEMICONDUCTOR-INSULATOR INTERFACES | PHOTODIODES | LAYERS | Aluminum compounds | Indium | Gallium arsenide | Chemical vapor deposition | Analysis | Electric properties
Journal Article
2017 IEEE Wireless Communications and Networking Conference (WCNC), ISSN 1525-3511, 03/2017, pp. 1 - 6
This paper studies the throughput maximization problem for a three-node relay channel with direct link and non-ideal circuit power. The relay operates in a... 
Power demand | Green products | Throughput | Resource management | Relays | Integrated circuit modeling | Optimization
Conference Proceeding
by Gao, Qiaofen and Gao, Lei and Li, Yanfen and Li, Zhen and Li, Xiangwei and Li, Ping and Li, Xianmin and Li, Mufei and Li, Yanhong and Li, Junlian and Li, Junwen and Li, Xiangmei and Li, Jing and Li, Jianli and Li, Lin and Li, Xiaohong and Li, Wenhong and Li, Hengjing and Li, Honghua and Li, Qing and Li, Yan and Li, Xiaolong and Li, Ying and Liu, Ning and Liu, Weiguo and Liu, Chunli and Liu, Binbin and Liu, Yinbiao and Liu, Wantong and Liu, Xinhao and Liu, Zisen and Liu, Wenxin and Liu, Decheng and Liu, Liqin and Liu, Jianmin and Liu, Shuli and Liu, Zhaoguo and Liu, Ying and Liu, Changshui and Liu, Baoxia and Liu, Wenbin and Liu, Haixia and Liu, Xinyu and Wang, Wei and Wang, Wen and Wang, Yuejin and Wang, Zhigang and Wang, Jing and Wang, Yongming and Wang, Bo and Wang, Mingming and Wang, Xinhua and Wang, Yu and Wang, Weizhong and Wang, Kun and Wang, Wuying and Wang, Hao and Wang, Yongfu and Wang, Tao and Wang, Han and Wang, Xiaoling and Wang, Hebin and Wang, Jianguo and Wang, Dakuan and Wang, Jintao and Wang, Zhijian and Lu, Yanan and Lu, Qifeng and Lu, Wei and Bai, Liqiong and Xin, Henan and Zhang, Fude and Zhang, Dongmei and Zhang, Suiqiang and Zhang, Weixing and Zhang, Jingge and Zhang, Fang and Zhang, Guoxian and Zhang, Jie and Zhang, Z huo and Zhang, Xiaozhong and Zhang, Xiaoping and Zhang, Xiaobing and Zhang, Yaping and Zhang, Zongde and Zhang, Songqing and Zhang, Lijuan and Zhang, Shunsheng and Zhang, Zhanjiang and Zhang, Zhanjun and Zhang, Can and Zhang, Hui and Zhang, Hongxia and Zhang, Haoran and Zhang, Yun and Zhang, Chuanfang and Ma, Jun and Ma, Jiangli and Ma, Ling and Ma, Yu and ... and LATENTTB-NSTM Study Team and LATENTTB-NSTM study team
The Lancet Infectious Diseases, ISSN 1473-3099, 10/2017, Volume 17, Issue 10, pp. 1053 - 1061
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2013, Volume 114, Issue 22
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2017, Volume 7, Issue 1, pp. 4457 - 8
During China's urbanization process, rural labor migrants have been suggested to be one important bridge population to change urban-rural distribution on... 
DIAGNOSIS | SHANGHAI | ASSAY | WORKERS | MULTIDISCIPLINARY SCIENCES | PULMONARY TUBERCULOSIS | RISK | BARRIERS | TARGETS | SMOKING | PREVALENCE | Tuberculosis | BCG | Urbanization | Population studies | Infections | Interferon | Smoking
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 04/2017, Volume 46, Issue 4, p. 2061
  We report measurements of the minority-carrier diffusion length of n-type In0.53Ga0.47As epilayer samples using the surface photovoltage (SPV) method, and... 
Photovoltaic cells | Electronics | Materials science
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 04/2017, Volume 46, Issue 4, p. 2061
To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link: http://dx.doi.org/10.1007/s11664-016-5124-y 
Gallium arsenide | Analysis | Diffusion | Properties
Journal Article
Applied Physics A: Materials Science & Processing, ISSN 0947-8396, 11/2015, Volume 121, Issue 3, p. 1109
To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link: http://dx.doi.org/10.1007/s00339-015-9467-7 
Transmission electron microscopes | Electric properties
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 05/2016, Volume 31, Issue 6, p. 65023
The capacitance-voltage (C-V) and conductance voltage (G/omega-V) characteristics of a TiW/p-InP Schottky barrier diode (SBD) are measured at 310 K in the... 
negative capacitances | InP | anomalous peaks | TiW alloy | CONTACTS | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, MULTIDISCIPLINARY | INTERFACE STATES | NEGATIVE CAPACITANCE | PARAMETERS | HEIGHT | GAAS | DEPENDENCE | ENGINEERING, ELECTRICAL & ELECTRONIC | ORIGIN | PEAK | CURRENT-VOLTAGE CHARACTERISTICS
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2013, Volume 8907
The short wavelength infrared (SWIR) band near 1.0-3.0 mu m plays an important role in many applications such as weather forecast, earth environmental or... 
extended wavelength | InGaAs | dark current | Electric potential | Wavelengths | Bias | Detectors | Voltage | Dark current | Devices | Activation energy
Conference Proceeding
Infrared Physics and Technology, ISSN 1350-4495, 09/2017, Volume 85, pp. 211 - 215
In order to obtain a low-damage recipe in the ICP processing, ICP-induced damage using Cl /CH etch gases in extended wavelength In Ga As detector materials was... 
InGaAs | Cl2/N2 | Cl2/CH4 | Extended wavelength | ICP induced damage
Journal Article
Infrared Physics and Technology, ISSN 1350-4495, 09/2017, Volume 85, pp. 211 - 215
In order to obtain a low-damage recipe in the ICP processing, ICP-induced damage using Cl /CH etch gases in extended wavelength In Ga As detector materials was... 
InGaAs | Extended wavelength | CH | ICP induced damage
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.