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Journal of Crystal Growth, ISSN 0022-0248, 2004, Volume 262, Issue 1, pp. 290 - 294
Uniform rod-like and multi-pod-like ZnO whiskers were synthesized by a simple hydrothermal process. The precursor used in the hydrothermal process is a mixture... 
A2. Growth from solutions | B1. Oxides | B2. Semiconducting materials | A1. Crystal morphology
Journal Article
Nature Genetics, ISSN 1061-4036, 2014, Volume 46, Issue 3, pp. 253 - 260
Journal Article
Solid State Communications, ISSN 0038-1098, 2004, Volume 132, Issue 3, pp. 269 - 271
Single-crystalline ZnO nanowires were synthesized by a simple hydrothermal process. The as-synthesized ZnO nanowires have diameters of 50–80 nm and lengths of... 
B. Nanowires | A. Nanostructures | C. Transmission electron microscopy | PHYSICS, CONDENSED MATTER | NANORODS | transmission electron microscopy | nanowires | nanostructures
Journal Article
Nature Genetics, ISSN 1061-4036, 04/2019, Volume 51, Issue 4, pp. 739 - 748
Journal Article
Nature Communications, ISSN 2041-1723, 2014, Volume 5, Issue 1, p. 4943
Eusocial insects have evolved the capacity to generate adults with distinct morphological, reproductive and behavioural phenotypes from the same genome. Recent... 
CIRCADIAN CLOCK | SEQ DATA | EVOLUTION | TRANSCRIPTOME | CAMPONOTUS-FLORIDANUS | BEHAVIOR | MULTIDISCIPLINARY SCIENCES | HARPEGNATHOS-SALTATOR | GENOME-WIDE ANALYSIS | GENE-EXPRESSION | DROSOPHILA | Ants - metabolism | Animals | Ants - genetics | Species Specificity | RNA Editing | Base Sequence | Molecular Sequence Data | Ants - classification | Male | Phylogeny | RNA - genetics | RNA - metabolism
Journal Article
physica status solidi (c), ISSN 1862-6351, 05/2016, Volume 13, Issue 5‐6, pp. 307 - 310
A high‐resistance buffer layer is critical for GaN‐based high electron mobility transistors (HEMTs) to suppress the drain leakage current and pre‐mature device... 
III‐nitrides | polarization doping method | metal organic chemical vapor deposition | high resistance | Metal organic chemical vapor deposition | High resistance | Polarization doping method | III-nitrides | Buffer layers | Polarization | Impurities | Semiconductor devices | Drains | Doping | Leakage current | High electron mobility transistors
Journal Article
Journal Article