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physics (67) 67
apparatus specially adapted therefor (62) 62
cinematography (62) 62
electrography (62) 62
holography (62) 62
materials therefor (62) 62
originals therefor (62) 62
photography (62) 62
photomechanical production of textured or patterned surfaces,e.g. for printing, for processing of semiconductordevices (62) 62
electricity (50) 50
basic electric elements (49) 49
electric solid state devices not otherwise provided for (48) 48
semiconductor devices (48) 48
auxiliary processes in photography (15) 15
photographic processes, e.g. cine, x-ray, colour,stereo-photographic processes (15) 15
photosensitive materials for photographic purposes (15) 15
calculating (7) 7
computing (7) 7
counting (7) 7
electric digital data processing (6) 6
gamma ray or x-ray microscopes (5) 5
irradiation devices (5) 5
measuring (5) 5
nuclear engineering (5) 5
nuclear physics (5) 5
performing operations (5) 5
techniques for handling particles or ionising radiation nototherwise provided for (5) 5
testing (5) 5
transporting (5) 5
general tagging of cross-sectional technologies spanning over several sections of the ipc (4) 4
general tagging of new technological developments (4) 4
manufacture or treatment of nanostructures (4) 4
measurement or analysis of nanostructures (4) 4
nanotechnology (4) 4
specific uses or applications of nanostructures (4) 4
technical subjects covered by former uspc (4) 4
technical subjects covered by former uspc cross-reference art collections [xracs] and digests (4) 4
technical subjects covered by former uspc cross-reference artcollections [xracs] and digests (4) 4
accessories therefor (3) 3
apparatus or arrangements employing analogous techniques usingwaves other than optical waves (3) 3
apparatus or arrangements for taking photographs or forprojecting or viewing them (3) 3
cd control (3) 3
measuring angles (3) 3
measuring areas (3) 3
measuring irregularities of surfaces or contours (3) 3
measuring length, thickness or similar lineardimensions (3) 3
laser spectrum (2) 2
lithography (2) 2
measuring volume, volume flow, mass flow or liquidlevel (2) 2
metering by volume (2) 2
photolithography simulation (2) 2
process window (2) 2
scd (2) 2
193nm dry lithography (1) 1
29nm half-pitch nand flash (1) 1
65nm node and beyond (1) 1
90 nm (1) 1
aapsm (1) 1
accumulators (1) 1
aim (1) 1
alternating phase-shift mask (1) 1
alternating-aperture psm (1) 1
and gray level value (1) 1
and target robustness (1) 1
apc (1) 1
apparatus for applying liquids or other fluent materials tosurfaces, in general (1) 1
apparatus for processing exposed photographic materials (1) 1
applying liquids or other fluent materials to surfaces, in general (1) 1
arf immersion (1) 1
arf lithography (1) 1
bandwidth (1) 1
bandwidth stability (1) 1
beol (1) 1
bib (1) 1
budgeting (1) 1
cd uniformity (1) 1
cd-sem (1) 1
chemical surface treatment (1) 1
chemistry (1) 1
circuits (1) 1
coating by vacuum evaporation, by sputtering, by ion implantationor by chemical vapour deposition, in general (1) 1
coating material with metallic material (1) 1
coating metallic material (1) 1
collectors (1) 1
colorimetry (1) 1
compact disks (1) 1
critical dimension (1) 1
dark voltage contrast (1) 1
debris (1) 1
decision making (1) 1
defectivity (1) 1
development (1) 1
devices (1) 1
dfm (1) 1
diffusion treatment of metallic material (1) 1
dof (1) 1
dual damascene (1) 1
electric discharge tubes or discharge lamps (1) 1
electric techniques not otherwise provided for (1) 1
engineering, electrical & electronic (1) 1
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07/2008
A method of forming a pattern comprises steps as follow. A substrate comprising a layer to be etched is provided. A first resist layer is formed on the... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
10/2007
The invention is directed towards a method for immersion lithography by locally pre-treating the surface of the wafer. The surface of the wafer is treated... 
ELECTROGRAPHY | PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES | HOLOGRAPHY | MATERIALS THEREFOR | APPARATUS SPECIALLY ADAPTED THEREFOR | PHOTOGRAPHY | CINEMATOGRAPHY | PHYSICS | ORIGINALS THEREFOR
Patent
09/2006
A method for fabricating a mask is provided. A patterned sacrificed layer is formed over a mask material layer, and the patterned sacrificed layer has an... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
09/2006
A novel immersion medium for immersion lithography is provided. The immersion medium is introduced to fill a gap in between a front surface of a projection... 
Patent
08/2004
A first phase shift mask is prepared, which comprises thereon a first phase shift clear area, a second phase shift clear area situated adjacent to the first... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
微影製程為進入未來世代技術的關鍵技術,但先進技術機台昂貴售價與開發成本造成進入下一代技術的實質成本快速成長。此外,先進技術的不確定性和多重選擇性,亦造成技術開發成本和時間上昇。因此,如何選擇22nm世代以下先進微影製程技術研發策略,以求降低技術開發成本,快速提供新技術給客戶使用,提升成本競爭力,是為重要關鍵議題。... 
Decision Making | Technology Forcast | 決策 | Lithographic Technology | 技術預測 | 微影技術 | 半導體技術 | I-Ching | 易經 | I-Ching Cube | Semiconductor Technology | 易立方
Dissertation
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2009, Volume 7520
Conference Proceeding
06/2004
A method for shrinking critical dimension of semiconductor devices includes forming a first pattern of a photoresist layer on a semiconductor device layer,... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2012, Volume 8326
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2010, Volume 7640
Conference Proceeding
02/2008
A method of moving bubbles includes utilizing an optical tweezers to form a photo resist brightness area and a photo resist darkness area in the photo resist... 
ELECTROGRAPHY | PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES | HOLOGRAPHY | MATERIALS THEREFOR | APPARATUS SPECIALLY ADAPTED THEREFOR | PHOTOGRAPHY | CINEMATOGRAPHY | PHYSICS | ORIGINALS THEREFOR
Patent
06/2003
First of all, a semiconductor substrate with a photoresist layer thereon is provided. Then a plurality of pattern photoresists with a first line width are... 
Patent
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2008, Volume 7140
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 12/2009, Volume 7520
Extreme ultraviolet (EUV) technology has been recognized as the major lithography technology for 22 nm HP and beyond to fulfill Moore's Law, which predicts... 
Collectors | Multilayers | Patterning | Lithography | Accumulators | Images | Debris | Ultraviolet
Journal Article
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