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physics (67) 67
apparatus specially adapted therefor (62) 62
cinematography (62) 62
electrography (62) 62
holography (62) 62
materials therefor (62) 62
originals therefor (62) 62
photography (62) 62
photomechanical production of textured or patterned surfaces,e.g. for printing, for processing of semiconductordevices (62) 62
electricity (51) 51
basic electric elements (50) 50
electric solid state devices not otherwise provided for (49) 49
semiconductor devices (49) 49
auxiliary processes in photography (15) 15
photographic processes, e.g. cine, x-ray, colour,stereo-photographic processes (15) 15
photosensitive materials for photographic purposes (15) 15
calculating (7) 7
computing (7) 7
counting (7) 7
electric digital data processing (6) 6
gamma ray or x-ray microscopes (5) 5
general tagging of cross-sectional technologies spanning over several sections of the ipc (5) 5
general tagging of new technological developments (5) 5
irradiation devices (5) 5
measuring (5) 5
nuclear engineering (5) 5
nuclear physics (5) 5
performing operations (5) 5
technical subjects covered by former uspc (5) 5
technical subjects covered by former uspc cross-reference art collections [xracs] and digests (5) 5
technical subjects covered by former uspc cross-reference artcollections [xracs] and digests (5) 5
techniques for handling particles or ionising radiation nototherwise provided for (5) 5
testing (5) 5
transporting (5) 5
manufacture or treatment of nanostructures (4) 4
measurement or analysis of nanostructures (4) 4
nanotechnology (4) 4
specific uses or applications of nanostructures (4) 4
accessories therefor (3) 3
apparatus or arrangements employing analogous techniques usingwaves other than optical waves (3) 3
apparatus or arrangements for taking photographs or forprojecting or viewing them (3) 3
cd control (3) 3
measuring angles (3) 3
measuring areas (3) 3
measuring irregularities of surfaces or contours (3) 3
measuring length, thickness or similar lineardimensions (3) 3
laser spectrum (2) 2
lithography (2) 2
measuring volume, volume flow, mass flow or liquidlevel (2) 2
metering by volume (2) 2
photolithography simulation (2) 2
process window (2) 2
scd (2) 2
193nm dry lithography (1) 1
29nm half-pitch nand flash (1) 1
65nm node and beyond (1) 1
90 nm (1) 1
aapsm (1) 1
accumulators (1) 1
aim (1) 1
alternating phase-shift mask (1) 1
alternating-aperture psm (1) 1
and gray level value (1) 1
and target robustness (1) 1
apc (1) 1
apparatus for applying liquids or other fluent materials tosurfaces, in general (1) 1
apparatus for processing exposed photographic materials (1) 1
applying liquids or other fluent materials to surfaces, in general (1) 1
arf immersion (1) 1
arf lithography (1) 1
bandwidth (1) 1
bandwidth stability (1) 1
beol (1) 1
bib (1) 1
budgeting (1) 1
cd uniformity (1) 1
cd-sem (1) 1
chemical surface treatment (1) 1
chemistry (1) 1
circuits (1) 1
coating by vacuum evaporation, by sputtering, by ion implantationor by chemical vapour deposition, in general (1) 1
coating material with metallic material (1) 1
coating metallic material (1) 1
collectors (1) 1
colorimetry (1) 1
compact disks (1) 1
critical dimension (1) 1
dark voltage contrast (1) 1
debris (1) 1
decision making (1) 1
defectivity (1) 1
development (1) 1
devices (1) 1
dfm (1) 1
diffusion treatment of metallic material (1) 1
dof (1) 1
dual damascene (1) 1
electric discharge tubes or discharge lamps (1) 1
electric techniques not otherwise provided for (1) 1
engineering, electrical & electronic (1) 1
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09/2006
An invention of lithography process using an improved reflection mask is provided for extreme ultraviolet (EUV) lithography. In the process an incident EUV is... 
Patent
Proc. SPIE, ISSN 0277-786X, 02/2005, Volume SPIE-5753, pp. 1158 - 1169
Planarization of gap-filling materials for low-k dual damascene processes is getting more and more important due to the photoresist process window shrinking as... 
Journal Article
04/2006, 7
A novel immersion medium for immersion lithography is provided. The immersion medium is introduced to fill a gap in between a front surface of a projection... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
03/2006
A dual phase shifting mask (PSM)/double exposure lithographic process for manufacturing a shrunk semiconductor device. A semiconductor wafer having a... 
Patent
Proc. SPIE, ISSN 0277-786X, 03/2005, Volume SPIE-5755, pp. 251 - 259
Tight control of critical dimensions (CDs) of integrated circuit (IC) is required to achieve desired circuit performances, and getting more and more important... 
Journal Article
07/2012
A system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer... 
Patent
Proc. SPIE, ISSN 0277-786X, 01/2005, Volume SPIE-5755, pp. 251 - 259
Tight control of critical dimensions (CDs) of integrated circuit (IC) is required to achieve desired circuit performances, and getting more and more important... 
Journal Article
03/2005
A phase shifting mask is disclosed in this present invention. The above-mentioned phase shifting mask comprises a quartz layer and a plurality of transmission... 
Patent
03/2005, 7
A phase shifting mask is disclosed in this present invention. The above-mentioned phase shifting mask comprises a quartz layer and a plurality of transmission... 
ELECTROGRAPHY | PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES | HOLOGRAPHY | MATERIALS THEREFOR | APPARATUS SPECIALLY ADAPTED THEREFOR | PHOTOGRAPHY | CINEMATOGRAPHY | PHYSICS | ORIGINALS THEREFOR
Patent
02/2005
A phase shifting lithographic process capable of creating a shrunk fine line pattern on a photoresist layer coated on a semiconductor wafer is disclosed. A... 
Patent
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2000, Volume 4000
Conference Proceeding
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