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physics (67) 67
apparatus specially adapted therefor (62) 62
cinematography (62) 62
electrography (62) 62
holography (62) 62
materials therefor (62) 62
originals therefor (62) 62
photography (62) 62
photomechanical production of textured or patterned surfaces,e.g. for printing, for processing of semiconductordevices (62) 62
electricity (51) 51
basic electric elements (50) 50
electric solid state devices not otherwise provided for (49) 49
semiconductor devices (49) 49
auxiliary processes in photography (15) 15
photographic processes, e.g. cine, x-ray, colour,stereo-photographic processes (15) 15
photosensitive materials for photographic purposes (15) 15
calculating (7) 7
computing (7) 7
counting (7) 7
electric digital data processing (6) 6
gamma ray or x-ray microscopes (5) 5
general tagging of cross-sectional technologies spanning over several sections of the ipc (5) 5
general tagging of new technological developments (5) 5
irradiation devices (5) 5
measuring (5) 5
nuclear engineering (5) 5
nuclear physics (5) 5
performing operations (5) 5
technical subjects covered by former uspc (5) 5
technical subjects covered by former uspc cross-reference art collections [xracs] and digests (5) 5
technical subjects covered by former uspc cross-reference artcollections [xracs] and digests (5) 5
techniques for handling particles or ionising radiation nototherwise provided for (5) 5
testing (5) 5
transporting (5) 5
manufacture or treatment of nanostructures (4) 4
measurement or analysis of nanostructures (4) 4
nanotechnology (4) 4
specific uses or applications of nanostructures (4) 4
accessories therefor (3) 3
apparatus or arrangements employing analogous techniques usingwaves other than optical waves (3) 3
apparatus or arrangements for taking photographs or forprojecting or viewing them (3) 3
cd control (3) 3
measuring angles (3) 3
measuring areas (3) 3
measuring irregularities of surfaces or contours (3) 3
measuring length, thickness or similar lineardimensions (3) 3
laser spectrum (2) 2
lithography (2) 2
measuring volume, volume flow, mass flow or liquidlevel (2) 2
metering by volume (2) 2
photolithography simulation (2) 2
process window (2) 2
scd (2) 2
193nm dry lithography (1) 1
29nm half-pitch nand flash (1) 1
65nm node and beyond (1) 1
90 nm (1) 1
aapsm (1) 1
accumulators (1) 1
aim (1) 1
alternating phase-shift mask (1) 1
alternating-aperture psm (1) 1
and gray level value (1) 1
and target robustness (1) 1
apc (1) 1
apparatus for applying liquids or other fluent materials tosurfaces, in general (1) 1
apparatus for processing exposed photographic materials (1) 1
applying liquids or other fluent materials to surfaces, in general (1) 1
arf immersion (1) 1
arf lithography (1) 1
bandwidth (1) 1
bandwidth stability (1) 1
beol (1) 1
bib (1) 1
budgeting (1) 1
cd uniformity (1) 1
cd-sem (1) 1
chemical surface treatment (1) 1
chemistry (1) 1
circuits (1) 1
coating by vacuum evaporation, by sputtering, by ion implantationor by chemical vapour deposition, in general (1) 1
coating material with metallic material (1) 1
coating metallic material (1) 1
collectors (1) 1
colorimetry (1) 1
compact disks (1) 1
critical dimension (1) 1
dark voltage contrast (1) 1
debris (1) 1
decision making (1) 1
defectivity (1) 1
development (1) 1
devices (1) 1
dfm (1) 1
diffusion treatment of metallic material (1) 1
dof (1) 1
dual damascene (1) 1
electric discharge tubes or discharge lamps (1) 1
electric techniques not otherwise provided for (1) 1
engineering, electrical & electronic (1) 1
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07/2012
A system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer... 
Patent
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2012, Volume 8326
Conference Proceeding
ECS Transactions, ISSN 1938-5862, 2011, Volume 34, Issue 1, pp. 231 - 236
Conference Proceeding
10/2010
An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a... 
Patent
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 03/2010, Volume 7640
Tight circuit CD control in a photolithographic process has become increasingly critical particularly for advanced process nodes below 32nm, not only because... 
Circuits | Lasers | Bandwidth | Budgeting | Compact disks | Devices | Logic | Photolithography
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2010, Volume 7640
Conference Proceeding
ECS Transactions, ISSN 1938-5862, 2010, Volume 27, Issue 1, pp. 461 - 466
Conference Proceeding
12/2009
To avoid the yield of wafers that undergo immersion lithography influencing by delay of post exposure baking (PEB), an operation system adjusts a speed of... 
Patent
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 12/2009, Volume 7520
Extreme ultraviolet (EUV) technology has been recognized as the major lithography technology for 22 nm HP and beyond to fulfill Moore's Law, which predicts... 
Collectors | Multilayers | Patterning | Lithography | Accumulators | Images | Debris | Ultraviolet
Journal Article
01/2009
The present invention provides a method for designing a mask. First, a main pattern including at least a strip pattern is formed on the mask substrate. A shift... 
ELECTROGRAPHY | PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES | HOLOGRAPHY | MATERIALS THEREFOR | APPARATUS SPECIALLY ADAPTED THEREFOR | PHOTOGRAPHY | CINEMATOGRAPHY | PHYSICS | ORIGINALS THEREFOR
Patent
01/2009
The present invention provides a method for designing a mask. First, a main pattern including at least a strip pattern is formed on the mask substrate. A shift... 
Patent
ECS Transactions, ISSN 1938-5862, 2009, Volume 18, Issue 1, pp. 391 - 396
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2009, Volume 7520
Conference Proceeding
07/2008
A method of forming a pattern comprises steps as follow. A substrate comprising a layer to be etched is provided. A first resist layer is formed on the... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
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