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2016, Lian jing xue shu, ISBN 9789570847352
Book
2015, ISBN 9789866078552
Book
Journal of the American Chemical Society, ISSN 0002-7863, 04/2010, Volume 132, Issue 13, pp. 4766 - 4771
Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates... 
HETEROJUNCTION | ENERGY | SILICON NANOWIRES | GROWTH | DRIVEN | CHEMISTRY, MULTIDISCIPLINARY | ELECTRICITY | Atomic force microscopy | Usage | Sapphires | Zinc oxide | Chemical properties | Gallium compounds | Electric properties
Journal Article
Applied physics letters, ISSN 1077-3118, 2010, Volume 96, Issue 23, pp. 231912 - 231912-3
Nonpolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs) show great promise. However, long wavelength emitters... 
PHYSICS, APPLIED | A-PLANE | DIODES | NITRIDE | NONPOLAR | WURTZITE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2014, Volume 104, Issue 21, p. 212101
Journal Article
physica status solidi (RRL) – Rapid Research Letters, ISSN 1862-6254, 01/2015, Volume 9, Issue 1, pp. 92 - 94
On semipolar GaN(101̄1), epitaxial ZnO grown by chemical vapor deposition consists of two distinct orientations as evidenced by transmission electron microscopy and X‐ray diffraction... 
ZnO | X‐ray diffraction | transmission electron microscopy | GaN | chemical vapor deposition | thin films | Thin films | X-ray diffraction | Transmission electron microscopy | Chemical vapor deposition | Solid state physics | Zinc oxides | Materials science | Diffraction | Gallium nitrides | Coherence | Zinc oxide | Epitaxial growth | Boundaries | Orientation
Journal Article
Physical Chemistry Chemical Physics, ISSN 1463-9076, 2018, Volume 20, Issue 2, pp. 1261 - 1266
The dissociation of water molecules absorbed on a cleaved non-polar GaN(11[combining macron]00) surface was studied primarily with synchrotron-based photoemission spectra and density-functional-theory calculations... 
Water chemistry | Gallium nitrides | Hydrogen atoms | Energy of dissociation | Photoelectric emission | Hydrogen production | Hydroxyl groups
Journal Article
Reports on progress in physics, ISSN 1361-6633, 2016, Volume 79, Issue 5, pp. 056501 - 56545
GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs... 
substrates | nonpolar | crystalline defects | light-emitting diodes | GaN | VAPOR-PHASE EPITAXY | SAPPHIRE SUBSTRATE | GALLIUM-NITRIDE | PHYSICS, MULTIDISCIPLINARY | OPTICAL-PROPERTIES | M-PLANE GAN | P-TYPE GAN | HIGH-POWER | MULTIPLE-QUANTUM WELLS | BUFFER LAYER | HIGH-QUALITY GAN | Sapphire | Gallium nitrides | Low cost | Lattices | Thermal conductivity | Light-emitting diodes | Substrates | Heat transfer
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2010, Volume 97, Issue 7, pp. 073101 - 073101-3
Conventional InGaN/GaN light-emitting diodes based on planar quantum well structures do not allow for efficient long-wavelength operation beyond the blue region due to a strong quantum confined Stark... 
Journal Article
Small, ISSN 1613-6810, 12/2015, Volume 11, Issue 45, pp. 6071 - 6077
.... For the first time, a piezo‐phototronic effect controlled visible light communication (PVLC) system based on InGaN/GaN multiquantum wells nanopillars is demonstrated, in which the information is coded by mechanical straining... 
InGaN/GaN multiquantum well nanopillars | bit error rates | two‐channel mode | visible light communication | piezo‐phototronic effect | two-channel mode | piezo-phototronic effect | SYSTEM | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SINGLE | FIELD | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | PHOTODETECTOR | CHEMISTRY, MULTIDISCIPLINARY | InGaN | GaN multiquantum well nanopillars | EMISSION | Light emitting diodes | Communication
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2015, Volume 426, pp. 168 - 172
Journal Article
Applied physics letters, ISSN 1077-3118, 2010, Volume 96, Issue 15, pp. 151902 - 151902-3
Journal Article
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2010, Volume 97, Issue 7, pp. 073115 - 073115-3
We present the growth, fabrication, and photovoltaic characteristics of In x Ga 1 − x N / GaN ( x ∼ 0.35... 
PHASE-SEPARATION | PHYSICS, APPLIED | ALLOYS | PREDICTION
Journal Article
IEEE transactions on electron devices, ISSN 1557-9646, 2017, Volume 64, Issue 3, pp. 779 - 795
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2016, Volume 456, pp. 121 - 132
Journal Article