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2016, 1, Devices, circuits, and systems, ISBN 9781482255881, xvi, 304
Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one... 
Integrated circuits | Semiconductors | Protection | Electric discharges | Electromagnetics & Microwaves | Circuits & Devices | Nanoscience & Nanotechnology
Book
IEEE Electron Device Letters, ISSN 0741-3106, 10/2016, Volume 37, Issue 10, pp. 1311 - 1313
While silicon controlled rectifiers (SCRs) are highly robust electrostatic discharge (ESD) protection devices, they typically are not suited for high-voltage... 
Thyristors | Voltage measurement | dual directional silicon controlled rectifier (DDSCR) | high holding voltage | Electrostatic discharge (ESD) | Electrostatic discharges | Robustness | Topology | Current density | segmented technique | ESD PROTECTION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2019, Volume 66, Issue 4, pp. 2044 - 2048
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2010, Volume 31, Issue 8, pp. 845 - 847
Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While... 
Thyristors | silicon-controlled rectifier (SCR) | Stacking | high holding voltage | Electrostatic discharge | latchup | Clamps | Computer science | Low voltage | Rectifiers | MOSFET circuits | Electrostatic discharge (ESD) | Robustness | Protection | SCR | ENGINEERING, ELECTRICAL & ELECTRONIC | Electric potential | Power supplies | Voltage | Electrostatic discharges | Devices | Acceptability
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2015, Volume 36, Issue 2, pp. 108 - 110
In this letter, a new compact model for the AlGaN/GaN high-electron mobility transistors developed based on explicit solutions to the Fermi level and the... 
Analytical models | AlGaN/GaN high-electron mobility transistor (HEMT) | compact model | HEMTs | Numerical models | drain current | Mathematical model | self-heating effect | MODFETs | Gallium nitride | Aluminum gallium nitride | DEVICES | MODFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2010, Volume 57, Issue 9, pp. 2296 - 2305
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2013, Volume 34, Issue 2, pp. 178 - 180
A high-robustness and low-capacitance clamp for on-chip electrostatic discharge (ESD) protection is developed. The low capacitance is obtained by mitigating... 
Radio frequency | Thyristors | Voltage measurement | silicon-controlled rectifier (SCR) | Electrostatic discharge (ESD) | Electrostatic discharges | Transmission line measurements | Parasitic capacitance | parasitic capacitance | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2019, Volume 40, Issue 9, pp. 1491 - 1494
Gate-grounded n-channel MOSFET (GGNMOS) has been widely used in electrostatic discharge (ESD) protection applications. In this letter, an enhanced GGNMOS,... 
segmentation topology | MOSFET | Voltage measurement | silicon-controlled rectifier (SCR) | Electrostatic discharges | Topology | gategrounded NMOSFET (GGNMOS) | Substrates | failure current | Layout | Electrostatic discharge (ESD) | 3-D TCAD simulation | Robustness | gate-grounded NMOSFET (GGNMOS) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2010, Volume 57, Issue 10, pp. 2736 - 2743
Transient behaviors of poly-bound diodes subject to pulses generated by the very fast transmission line pulsing (VFTLP) tester are characterized for fast ESD... 
Resistance | transient behavior | VFTLP | Electrostatic discharge | ESD | Transient analysis | Anodes | Diodes | Stress | Testing | Cathodes | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Measurement | Usage | Semiconductor lasers | Innovations | Voltage | Polysilicon | Simulation methods | Electric properties | Electric potential | Charging | Correlation | Transmission lines | Mathematical models | Devices | Failure
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2012, Volume 33, Issue 6, pp. 893 - 895
The diode-triggered silicon-controlled rectifier (DTSCR) is frequently used for low-voltage electrostatic discharge (ESD) protection applications, but such a... 
Thyristors | silicon-controlled rectifier (SCR) | Layout | Logic gates | Electrostatic discharges | Silicon | CMOS integrated circuits | electrostatic discharge (ESD) | Delay | Diode trigger | ENGINEERING, ELECTRICAL & ELECTRONIC | Electric potential | Devices | Rectifiers | Voltage
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2011, Volume 32, Issue 9, pp. 1200 - 1202
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2015, Volume 36, Issue 5, pp. 424 - 426
An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode gate-cathode gate directly connected silicon-controlled... 
direct-connected | Thyristors | SCR | Stacking | ESD | Logic gates | Electrostatic discharges | Transmission line measurements | CMOS integrated circuits | Leakage currents | overshoot | stacking | SPEED | DESIGN | ESD PROTECTION | SCR-BASED DEVICES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2012, Volume 33, Issue 5, pp. 640 - 642
Journal Article
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