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thyristors (8) 8
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IEEE Electron Device Letters, ISSN 0741-3106, 08/2017, Volume 38, Issue 8, pp. 1063 - 1066
In this letter, we present the "anode-side" SuperJunction trench field stop+ IGBT concept with drift region SuperJunction pillars placed at the anode side of... 
Insulated gate bipolar transistors | Performance evaluation | Fabrication | field stop | point injection | Insulated gate bipolar transistor | SuperJunction (SJ) | Switches | Anodes | Electric fields | Cathodes | BIPOLAR-TRANSISTOR | ENGINEERING, ELECTRICAL & ELECTRONIC | Decoupling | Steering | Voltage drop | Breakdown | Pillars | Drift | Switching
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2019, Volume 66, Issue 7, pp. 3066 - 3072
Journal Article
IEEE Transactions on Industry Applications, ISSN 0093-9994, 07/2019, Volume 55, Issue 4, pp. 3501 - 3511
This paper offers a reliable solution to the detection of broken rotor bars in induction machines with a novel methodology, which is based on the fact that the... 
Time-frequency analysis | Induction motors | Broken bars | induction motor | Rotors | Harmonic analysis | spectral content | Circuit faults | time–frequency (T–F) | stray flux | Stators | frequency extraction | Bars | DIAGNOSIS | FAILURES | time-frequency (T-F) | CAGE ROTOR | SIGNATURE | TRANSIENT ANALYSIS | ENGINEERING, ELECTRICAL & ELECTRONIC | ENGINEERING, MULTIDISCIPLINARY | FAULT-DETECTION | MACHINE
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2015, Volume 62, Issue 7, pp. 2263 - 2269
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2013, Volume 60, Issue 2, pp. 819 - 826
Journal Article
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISSN 1063-6854, 06/2015, Volume 2015-, pp. 109 - 112
Conference Proceeding
Proceedings of the International Symposium on Power Semiconductor Devices and ICs, ISSN 1063-6854, 07/2016, Volume 2016-, pp. 371 - 374
The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In... 
Conduction | Thyristors | Computer simulation | Power semiconductor devices | Devices | Design analysis | Diodes | Gates
Conference Proceeding
IEEE Electron Device Letters, ISSN 0741-3106, 08/2013, Volume 34, Issue 8, pp. 954 - 956
In this letter, we use a novel 3-D model, earlier calibrated with experimental results on standard gate commutated thyristors (GCTs), with the aim to explain... 
safe operating area | maximum controllable current | thyristor | wafer modeling | Gate commutated thyristor | SOA | IGCT | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IET Circuits, Devices and Systems, ISSN 1751-858X, 03/2014, Volume 8, Issue 3, pp. 221 - 221
The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate... 
Thyristors | Dynamics | Segments | Mathematical models | Devices | Dynamical systems | Gates | Optimization
Journal Article
01/2018
Technology computer-aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However, most TCAD tools... 
Technology & Engineering | Circuits | Electronics
Book Chapter
2019 Electric Vehicles International Conference (EV), 10/2019, pp. 1 - 6
This paper examines the evolution of performance degradation through capacity fade in Li-ion cells when subjected to 8 months of automotive drive cycles in... 
Degradation | Temperature | equivalent circuit | simulation | Lithium-ion | Aging | Throughput | model | US Department of Defense | battery cell | Automotive engineering | Testing
Conference Proceeding
Proceedings: IECON 2018 - 44th Annual Conference of the IEEE Industrial Electronics Society, 12/2018, pp. 2044 - 2049
Conference Proceeding
CAS 2011 Proceedings (2011 International Semiconductor Conference), ISSN 1545-827X, 10/2011, Volume 2, pp. 361 - 364
The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The... 
Large Area SOA | Thyristors | Logic gates | Integrated Gate Commutated Turn-off Thyristor | Anodes | Current density | Integrated circuit modeling | Cathodes | Load modeling
Conference Proceeding
12/2018
We disclose a high voltage semiconductor device comprising a semiconductor substrate of a second conductivity type; a semiconductor drift region of the second... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
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