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1984, Topics in applied physics, ISBN 0387128085, Volume 55-56, 2 v.
Book
Solid State Electronics, ISSN 0038-1101, 05/2013, Volume 83, pp. 30 - 36
► Spectroscopic detection of MRO. ► Vacated O-site defect description. ► Spectroscopic detection of vacated site defects. Three inter-related topics are... 
Remote plasma processing | SiO2 and GeO2 | Medium range order | Pre-existing defects | Band edge electronic structure | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | X-RAY-ABSORPTION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Physical review letters, ISSN 0031-9007, 2007, Volume 98, Issue 19, p. 196802
As discovered by Ohtomo and Hwang, a large sheet charge density with high mobility exists at the interface between SrTiO3 and LaAlO3. Based on transport,... 
IR-59119 | METIS-242616 | PHYSICS, MULTIDISCIPLINARY | MOBILITY | LANTHANUM OXIDES | Other,SYNCHRAD | CHARGE DENSITY | ANNEALING | STRONTIUM OXIDES | MATHEMATICAL MODELS | CARRIER MOBILITY | TITANIUM OXIDES | CARRIER DENSITY | INTERFACES | MATERIALS SCIENCE | ALUMINIUM OXIDES
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 4/2013, Volume 52, Issue 4, pp. 04CH10 - 04CH10-6
The following topics are addressed: (i) X-ray absorption spectroscopy (XAS) studies of plasma deposited non-crystalline (nc-) SiO 2 and GeO 2 emphasizing (a)... 
PHYSICS, APPLIED | SILICA
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 12/2004, Volume 85, Issue 24, pp. 5917 - 5919
The electron energy band alignment between (100)Si and several complex transition/rare earth (RE) metal oxides (LaScO3, GdScO3, DyScO3, and LaAlO3, all in... 
THIN-FILMS | TRANSISTORS | PHYSICS, APPLIED | DIELECTRICS | LAALO3 | TRANSITION-METAL | PHOTOEMISSION | EDGE | DEPENDENCE | SIO2
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 4/2011, Volume 50, Issue 4, pp. 04DC09 - 04DC09-7
This article, the second of a two-part sequence, combines X-ray absorption spectroscopy (XAS) and many-electron theory to develop a model for intrinsic bonding... 
LEVEL CONTROLLED INCORPORATION | PHYSICS, APPLIED | INTERFACES | AMORPHOUS SIO2 | SILICON DIOXIDE | ABSORPTION | ELEMENTAL OXIDES | STRESS | CAPACITORS | ELECTRONIC-STRUCTURE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2002, Volume 91, Issue 7, pp. 4500 - 4505
A far ultraviolet (UV) spectroscopic ellipsometer system working up to 9 eV has been developed, and applied to characterize high-K-dielectric materials. These... 
PHYSICS, APPLIED | GATE DIELECTRICS | SILICON | GAP | EDGE | PRECISION | SIO2 | Ultraviolet radiation | Research | Quantum theory | Ellipsometry
Journal Article
physica status solidi (a), ISSN 1862-6300, 03/2010, Volume 207, Issue 3, pp. 631 - 634
This article identifies a length scale for spinodal decomposition of Hf and Zr silicate alloys. This has provided important insights into chemical bonding... 
61.05.jp | 64.75.Lm | 61.43.Dq | 61.05.cp | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | SIO2
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2000, Volume 77, Issue 18, pp. 2912 - 2914
Dielectric constants, k, of Zr(Hf) silicate alloy gate dielectrics obtained from analysis of capacitance-voltage curves of metal-oxide-semiconductor capacitors... 
PHYSICS, APPLIED | GATE DIELECTRICS
Journal Article
IBM Journal of Research and Development, ISSN 0018-8646, 05/1999, Volume 43, Issue 3, pp. 301 - 326
Journal Article
physica status solidi (a), ISSN 1862-6300, 05/2009, Volume 206, Issue 5, pp. 915 - 918
There are many applications for nanocrystalline thin films in optical devices that require isotropic optical properties. A novel way to obtain these isotropic... 
61.05.cj | 64.60.ah | 64.60.aq | 61.43.Dq | 61.72.Mm | THIN-FILMS | PHYSICS, CONDENSED MATTER | DEFECTS | STATES | PHYSICS, APPLIED | MEMORY | ALLOYS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ALTERNATIVE GATE DIELECTRICS | ELEMENTAL OXIDES
Journal Article
Journal of Non-Crystalline Solids, ISSN 0022-3093, 05/2002, Volume 303, Issue 1, pp. 40 - 49
This paper develops a classification scheme for non-crystalline dielectrics that separates them into three groups with different amorphous morphologies, and... 
TOPOLOGY | MATERIALS SCIENCE, MULTIDISCIPLINARY | RANGE ORDER | CHALCOGENIDE ALLOYS | NON-CRYSTALLINE SOLIDS | OXIDES | MATERIALS SCIENCE, CERAMICS | SILICATE
Journal Article
Applied Physics A: Materials Science and Processing, ISSN 0947-8396, 03/2004, Volume 78, Issue 4, pp. 453 - 459
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2004, Volume 85, Issue 24, pp. 5917 - 5919
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 2003, Volume 43, Issue 9, pp. 1417 - 1426
Spectroscopic studies of transition metal (Tm) and rare earth (Re) oxides, combined with ab initio theory identify the band edge electronic structure of high-K... 
PHYSICS, APPLIED | OXIDE | FILMS | GAP | SILICATE | PHOTOELECTRON-SPECTROSCOPY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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