X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (5360) 5360
Patent (721) 721
Publication (216) 216
Conference Proceeding (182) 182
Book Chapter (40) 40
Book / eBook (34) 34
Dissertation (21) 21
Book Review (8) 8
Report (4) 4
Paper (3) 3
Magazine Article (2) 2
Newspaper Article (2) 2
Data Set (1) 1
Technical Report (1) 1
Web Resource (1) 1
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
humans (1326) 1326
male (1054) 1054
index medicus (951) 951
female (861) 861
animals (722) 722
middle aged (645) 645
aged (521) 521
adult (498) 498
electricity (370) 370
mice (337) 337
physics (303) 303
chemistry (284) 284
analysis (282) 282
basic electric elements (253) 253
metallurgy (229) 229
rats (228) 228
oncology (224) 224
semiconductor devices (221) 221
electric solid state devices not otherwise provided for (217) 217
surgery (192) 192
research (191) 191
expression (182) 182
aged, 80 and over (173) 173
pharmacology & pharmacy (173) 173
neurosciences (170) 170
medicine & public health (169) 169
biochemistry & molecular biology (161) 161
physics, applied (159) 159
japan (151) 151
respiratory system (149) 149
cancer (141) 141
treatment outcome (137) 137
cell biology (135) 135
time factors (125) 125
risk factors (120) 120
retrospective studies (118) 118
adolescent (116) 116
care and treatment (116) 116
proteins (116) 116
medicine (115) 115
chemistry, physical (111) 111
prognosis (111) 111
rats, wistar (110) 110
mutation (108) 108
chemotherapy (105) 105
cells, cultured (104) 104
general tagging of cross-sectional technologies spanning over several sections of the ipc (103) 103
general tagging of new technological developments (103) 103
technical subjects covered by former uspc cross-reference art collections [xracs] and digests (102) 102
chemistry, multidisciplinary (101) 101
information storage (101) 101
cardiac & cardiovascular systems (100) 100
information storage based on relative movement between recordcarrier and transducer (99) 99
multidisciplinary sciences (98) 98
health aspects (97) 97
performing operations (96) 96
research article (96) 96
cells (95) 95
transporting (95) 95
materials science, multidisciplinary (92) 92
compositions based thereon (90) 90
disease (90) 90
gene expression (90) 90
organic macromolecular compounds (89) 89
their preparation or chemical working-up (89) 89
immunohistochemistry (88) 88
clinical neurology (86) 86
pathology (86) 86
young adult (85) 85
disease models, animal (84) 84
patients (83) 83
dose-response relationship, drug (81) 81
electric communication technique (81) 81
child (79) 79
molecular sequence data (79) 79
article (78) 78
genetic aspects (78) 78
inflammation (78) 78
activation (77) 77
biophysics (77) 77
follow-up studies (76) 76
tomography, x-ray computed (76) 76
therapy (75) 75
engineering, electrical & electronic (74) 74
mice, inbred c57bl (74) 74
pictorial communication, e.g. television (74) 74
hematology (73) 73
usage (73) 73
immunology (72) 72
physiological aspects (72) 72
medical colleges (71) 71
apoptosis (70) 70
organic chemistry (70) 70
physiology (69) 69
tumors (69) 69
science (68) 68
survival (68) 68
alloys (67) 67
asthma (67) 67
physics, particles & fields (67) 67
more...
Library Location Library Location
Library Location Library Location
X
Sort by Item Count (A-Z)
Filter by Count
Robarts - Stacks (13) 13
UTL at Downsview - May be requested (11) 11
UofT at Scarborough - Stacks (6) 6
East Asian (Cheng Yu Tung) - Stacks (5) 5
St. Michael's College (John M. Kelly) - 2nd Floor (4) 4
Gerstein Science - Stacks (3) 3
Online Resources - Online (2) 2
UofT at Mississauga - Stacks (2) 2
Engineering & Comp. Sci. - Stacks (1) 1
Trinity College (John W Graham) - Stacks (1) 1
University College (Laidlaw) - Stacks (1) 1
UofT Schools - Stacks (1) 1
Victoria University E.J. Pratt - Storage (1) 1
more...
Language Language
Language Language
X
Sort by Item Count (A-Z)
Filter by Count
English (5945) 5945
Japanese (305) 305
French (136) 136
German (63) 63
Chinese (30) 30
Portuguese (26) 26
Korean (6) 6
Spanish (6) 6
Russian (1) 1
more...
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Nuclear Inst. and Methods in Physics Research, B, ISSN 0168-583X, 12/2015, Volume 365, pp. 168 - 170
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2015, Volume 36, Issue 11, pp. 1180 - 1182
Vertical structured GaN power devices have recently been attracting a great interest because of their potential on extremely high-power conversion efficiency.... 
Schottky diodes | Breakdown voltage | power semiconductor devices | Silicon | Gallium nitride | Electric fields | Substrates | P-n junctions | gallium nitride | VAPOR-PHASE EPITAXY | VOID-ASSISTED SEPARATION | ENGINEERING, ELECTRICAL & ELECTRONIC | Electric potential | Vapor phase epitaxy | Gallium nitrides | Voltage | Breakdown | Drift | Diodes
Journal Article
Journal of Physical Organic Chemistry, ISSN 0894-3230, 02/2013, Volume 26, Issue 2, pp. 171 - 181
Basicities of a number of ring‐substituted N,N‐dimethylanilines (DMA) and some related bases in water, acetonitrile, and THF and in the gas phase have been... 
basicity | N,N‐dimethylaniline | THF | protonation site | gas phase | acetonitrile | water | B3LYP 6‐311+G | G3(MP2) | N,N-dimethylaniline | B3LYP 6-311+G | N-dimethylaniline | SITE | CHEMISTRY, ORGANIC | CHEMISTRY, PHYSICAL | PHOSPHAZENES | PROTON AFFINITIES | NONPOLAR MEDIA | RESONANCE | ACID-BASE EQUILIBRIA | ANILINIUM IONS | SCALE | Hydrogen-ion concentration | Nitriles
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 2/2013, Volume 52, Issue 2, pp. 028007 - 028007-3
In this letter, we describe the characteristics of Gallium Nitride (GaN) p--n junction diodes fabricated on free-standing GaN substrates with low specific... 
PHYSICS, APPLIED | Electric potential | Gallium nitrides | Voltage | Breakdown | Leakage current | Filled plastics | Diodes | P-n junctions
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 04/2018, Volume 57, Issue 4, p. 4
A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guardring structures.... 
WAFERS | VAPOR-PHASE EPITAXY | PHYSICS, APPLIED | SUBSTRATE
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 06/2019, Volume 58, Issue SC, p. SCCD03
In order to avoid sudden catastrophic hard breakdown in high breakdown voltage vertical GaN p-n junction diodes, punch-through induced breakdown structures... 
PHYSICS, APPLIED | SUBSTRATE | POWER DIODES | Electric potential | Gallium nitrides | Avalanche diodes | Organic light emitting diodes | Breakdown | Junction diodes | Substrates | Repair & maintenance | P-n junctions
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 161 - 164
We report vertical GaN-on-GaN p-n diodes with a breakdown voltage (BV) of 1.7 kV and a low differential specific ON-resistance R-ON of 0.55 m Omega . cm(2)... 
p-n junction diodes | FREESTANDING GAN | bulk gallium nitride (GaN) | high breakdown voltage | PIN RECTIFIERS | avalanche breakdown | specific on-resistance | ideality factor | JUNCTION DIODES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
physica status solidi (a), ISSN 1862-6300, 07/2011, Volume 208, Issue 7, pp. 1535 - 1537
This report describes the fabrication and characteristics of GaN p–n junction diodes on free‐standing GaN substrates with low dislocation density. We have... 
high breakdown voltage | p–n diodes | free‐standing GaN substrates | GaN | free-standing GaN substrates | p-n diodes | VAPOR-PHASE EPITAXY | PHYSICS, CONDENSED MATTER | VOLTAGE | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | VOID-ASSISTED SEPARATION | RECTIFIERS
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 06/2019, Volume 58, Issue SC, p. SCCD05
Pulsed photo-electrochemical (PEC) etching was performed to fabricate mesa-structure vertical GaN p-n junction diodes without process damages which are... 
PHYSICS, APPLIED | SUBSTRATE | POWER DIODES | Electronic devices | Gallium nitrides | Photoluminescence | Breakdown | Organic light emitting diodes | Etching | Junction diodes | Impact damage | Repair & maintenance | P-n junctions
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 161 - 164
Journal Article
physica status solidi (a), ISSN 1862-6300, 05/2018, Volume 215, Issue 9, pp. 1700501 - n/a
This paper presents electroluminescence intensity mapping on a p–n junction plane of vertical GaN diodes under forward‐biased conditions for the first time. By... 
junction diodes | GaN | electroluminescence | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | BULK GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | Circuit components | Liquors | Epitaxial layers | Gallium nitrides | Organic light emitting diodes | Mapping | Electroluminescence | Epitaxial growth | Junction diodes | Substrates | Crowding | P-n junctions
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 06/2017, Volume 56, Issue 6, p. 61001
In the mass production of GaN-on-GaN vertical power devices, a nondestructive simple inspection of the net donor concentration (N-D - N-A) of the n(-)-drift... 
VAPOR-PHASE EPITAXY | DEVICES | PHYSICS, APPLIED | BULK GAN | VOID-ASSISTED SEPARATION
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 11/2017, Volume 70, pp. 86 - 91
Nitrogen-ion-implantation damage on SiC has been clearly imaged using scanning internal photoemission microscopy (SIPM). Ni Schottky contacts were formed on... 
Ion implantation | Scanning internal photoemission microscopy | Schottky contact | SiC | Damage characterization | PHOSPHORUS | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRICAL-PROPERTIES | ENGINEERING, ELECTRICAL & ELECTRONIC | Microscope and microscopy | Silicon carbide
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 04/2018, Volume 57, Issue 4
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 12/2011, Volume 32, Issue 12, pp. 1674 - 1676
This letter describes a new two-step electrode process on p-GaN and characteristics of GaN p-n junction diodes on free-standing GaN substrates with low... 
Breakdown voltage | VAPOR-PHASE EPITAXY | VOID-ASSISTED SEPARATION | PLASMA DAMAGE | power semiconductor devices | gallium nitride | RECTIFIERS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 06/2019, Volume 58, Issue SC, p. SCCD02
We applied scanning internal photoemission microscopy (SIPM) to characterize the degradation of GaN Schottky contacts formed on a thick n-GaN layer grown on a... 
VAPOR-PHASE EPITAXY | PHYSICS, APPLIED | MAPPING EVALUATION | HEMT | VOID-ASSISTED SEPARATION | Degradation | Electric potential | Photoelectric effect | Ultraviolet lasers | Microscopy | Gallium nitrides | Bias | Current distribution | Silicon | Photoelectric emission | Substrates
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.