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Materials Science Forum, ISSN 1662-9752, 07/2019, Volume 963, pp. 709 - 713
We demonstrated that silicon vacancy (VSi) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance.... 
Magnetic resonance | Organic light emitting diodes | Junction diodes | Color centers | Quantum sensors | P-n junctions | Proton beams
Journal Article
Journal of Materials Research, ISSN 0884-2914, 10/2018, Volume 33, Issue 20, pp. 3355 - 3361
Journal Article
by Chris J, Allender and Jenna L, Bowen and Widatella, Awadalla and Iason, Kyriazis and Nikolaos, Tsopanoglou and Panagiotis, Kallidonis and Odysseas, Andrikopoulos and Despoina, Liourdi and Helen, Papadaki and Konstantina, Geronatsiou and Nicolas, Haseke and Sebastian, Walther and Christan, Gratzke and Christain G, Stief and Ronald, Sroka and Ephrem O, Olweny and Stephen, Faddegon and Stacey, McLeroy and Raul, Fernandez and Bruce E, Gnade and Heather E, Beardsley and Margaret S, Pearle and Jeffrey A, Cadeddu and Jeffrey A, Cadeddu and Tatsuo, Igarashi and Takuro, Ishii and Satoki, Zenbutsu and Yukio, Naya and Nuzhath, Khan and Deirdre, Anderson and Jonathan, Watkiss and Ben, Challacombe and Mohammed Shamim, Khan and Prokar, Dasgupta and Declan, Cahill and Nuzhath, Khan and Deirdre, Anderson and Faria, Khan and Jonathan, Watkiss and Ben, Challacombe and Mohammed Shamim, Khan and Prokar, Dasgupta and Declan, Cahill and Nieroshan, Rajarubendra and Ping Han, Chia and Aasheen, Munshey and Shomik, Sengupta and Damien, Bolton and Oneel, Patel and Lin, Xiao and Joseph, Ischia and Graham, Baldwin and Arthur, Schulkes and Payal, Kapur and Yung K, Tan and Samuel K, Park and Mehrad, Adibi and Sara L, Best and Jeffrey A, Cadeddu and Daniel M, de Bruin and Dirk J, Faber and Ton G, van Leeuwen and Jean J, de la Rosette and Pilar, Laguna and Shubha, De and Leah, Grossman and Niels, Johnsen and Greg, Mitchell and Ted, Klein and Benjamin, Lee and Panagiotis, Kitrou and Dimitrios, Karnabatidis and Christina, Kalogeropoulou and Athanasios, Tsamandas and Theofanis, Vrettos and Ioannis, Georgiopoulos and Aarond D, Benson and Bradley F, Schwartz and Kristina L, Penniston and Lauren, Iwicki and Ibrahim, Saeed and Thomas D, Crenshaw and Stephen Y, Nakada and Vivek, Joshi and Sushil, Karia and Sudhir, Sheth and Jitendra, Amlani and Sunil, Moteria and Mohammad Reza, Darabi mahboub and Eugene, Fuchs and Michael, Conlin and Hassan, Razvi and John D, Denstedt and Linda, Nott and Ad, Hendrikx and Michael, Luke and S.K, Pal and Jean, de la Rosette and Sunil, M and Maria Chiara, Sighinolfi and ...
Journal of Endourology, ISSN 0892-7790, 11/2011, Volume 25, Issue S1, pp. P1 - A373
Journal Article
RADIOISOTOPES, ISSN 0033-8303, 06/2019, Volume 68, Issue 6, pp. 423 - 431
Journal Article
PLoS ONE, ISSN 1932-6203, 05/2019, Volume 14, Issue 5, pp. e0217522 - e0217522
Journal Article
KAGAKU TO SEIBUTSU, ISSN 0453-073X, 03/2018, Volume 56, Issue 4, pp. 279 - 286
Journal Article
PLoS ONE, ISSN 1932-6203, 07/2015, Volume 10, Issue 7, pp. e0130472 - e0130472
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 02/2017, Volume 64, Issue 2, pp. 852 - 858
Journal Article
Polymer Degradation and Stability, ISSN 0141-3910, 08/2019, Volume 166, pp. 219 - 229
Tin whisker growth, which may lead to short circuits and current leakage, is a serious issue in electronics components. Polyurethane-based conformal coatings... 
Electron beam irradiation | Conformal coatings | Polyurethane | Acrylate | Tin whiskers | Adhesion | Silane | SPONTANEOUS GROWTH | POLYMER SCIENCE | MECHANICAL-PROPERTIES | Coatings | Polyurethanes | Analysis | Radiation | Polyurethane resins | Short circuits | Current leakage | Moisture | Mechanical properties | Effects | High temperature | Degradation | Electron beams | Coating effects | Electron irradiation | Protective coatings
Journal Article
Materials Science Forum, ISSN 1662-9752, 07/2019, Volume 963, pp. 726 - 729
4H-SiC and SOI substrates were bonded by SiO2-SiO2 direct bonding method with diluted HF solution (0.5 wt.%). After the bonding process, the handle layer and... 
Radiation hardening | Thickness | Silicon carbide | Silicon substrates | Silicon | Sensors | Photodiodes | Bonding | Silicon dioxide
Journal Article
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2018, Volume 112, Issue 2, p. 23503
The effects of ionizing radiation on β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated. A gamma-ray tolerance as high as... 
SINGLE-CRYSTALS | ELECTRON | PHYSICS, APPLIED | DISPLACEMENT THRESHOLD ENERGY | PERFORMANCE | GENERATION | DAMAGE | CHARGE | INDUCED LEAKAGE CURRENT | Radiation effects | Semiconductor devices | Field effect transistors | Current leakage | Hardness | Silicon dioxide | MOSFETs | Radiation dosage | Metal oxides | Gamma rays | Gallium oxides | Ionizing radiation | Threshold voltage | Transistors | Radiation damage | Gates
Journal Article
by Yamagami, Keitaro and Kurogi, Ryota and Kurogi, Ai and Nishimura, Kunihiro and Onozuka, Daisuke and Ren, Nice and Kada, Akiko and Nishimura, Ataru and Arimura, Koichi and Ido, Keisuke and Mizoguchi, Masahiro and Sakamoto, Tetsuya and Kayama, Takamasa and Suzuki, Michiyasu and Arai, Hajime and Hagihara, Akihito and Iihara, Koji and Masayoshi, Takigami and Kenji, Kamiyama and Kiyohiro, Houkin and Shougo, Nishi and Tetsuyuki, Yoshimoto and Sadao, Kaneko and Koji, Oka and Hiroshi, Ooyama and Kyousuke, Kamada and Kenichi, Makino and Naoki, Tokumitsu and Kazuhiro, Sako and Susumu, Suzuki and Nozomi, Suzuki and Naoto, Izumi and Kazumi, Nitta and Masahumi, Ootaki and Masanori, Isobe and Mikio, Nishiya and Takaaki, Yamazaki and Syouji, Mabuchi and Kuniaki, Ogasawara and Naohiko, Kubo and Yukihiko, Shimizu and Keiichi, Saito and Tatumi, Yamanome and Atsuo, Yoshino and Mitsuyuki, Fujitsuka and Masaaki, Takami and Hirotoshi, Ohtaka and Teruyuki, Hirano and Yosiaki, Shiokawa and Takaharu, Okada and Ichiro, Suzuki and Michihiro, Kohno and Jou, Haraoka and Yoshinori, Arai and Noriyoshi, Kawamura and Akira, Isoshima and Masaharu, Yasue and Mitsuhiko, Hokari and Takayoshi, Kobayashi and Kensuke, Kawai and Taketoshi, Maehara and Hajime, Arai and Makoto, Noguchi and Haruhiko, Hoshino and Hirofumi, Hiyama and Kensaku, Yoshida and Osamu, Utsugi and Yasuaki, Takeda and Kouichi, Tamaki and Hirohide, Karasudani and Takao, Urabe and Shiro, Kobayashi and Michio, Nakamura and Yorio, Koguchi and Junichi, Ono and Sumio, Suda and Hiromu, Hadeishi and Toshio, Fukutake and Kenji, Wakui and Hirokazu, Tanno and Naoki, Ishige and Takashi, Ohasi and Hideki, Sakai and Yasuaki, Nishimura and Takayuki, Watanabe and Takashi, Matsumoto and Naoki, Koketsu and Yuichi, Hirose and Manabu, Doyu and Toshinori, Hasegawa and Naoto, Kuwayama and Shinichi, Terao and Nobuhiko, Mizutani and Noriyuki, Suzaki and Satoshi, Okuda and Keizo, Yasui and Yukio, Seki and Yasuhiro, Hasegawa and Akira, Ikeda and Youtarou, Takeuchi and ... and J-ASPECT Study Collaborators
World Neurosurgery, ISSN 1878-8750, 2019
Background: The epidemiology of patients with traumatic brain injury (TBI) has changed dramatically over recent decades as a result of rapid advances in aging... 
Aging | Hospital mortality | Prognosis | Traumatic brain injury | Subdural hematoma | Index Medicus
Journal Article
Journal Article
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