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Sensors (Switzerland), ISSN 1424-8220, 04/2018, Volume 18, Issue 4, p. 1084
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2014, Volume 104, Issue 5, p. 51124
Uncooled photodetectors fabricated from CdSe nanocrystals with an interdigital metallization are investigated in the visible-near-infrared spectral region. A... 
TRANSPORT | PHYSICS, APPLIED | SOLAR-CELLS | PHOTORESPONSE | FILMS | SIZE | MU-M | IN-SITU SYNTHESIS | QUANTUM DOTS | Near infrared radiation | Photoelectric effect | Nanocrystals | Photometers | Photoluminescence | Metallizing | Electronics | Dark current | Silicon | Spectral sensitivity | Infrared spectra | Photoelectric emission
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 4/2017, Volume 28, Issue 7, pp. 5452 - 5459
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2015, Volume 36, Issue 11, pp. 1172 - 1175
A self-powered metal-semiconductor Schottky diode with planar interdigital Au-Ti electrodes was fabricated and characterized for the detection of near-infrared... 
Electrodes | Photovoltaic | near-infrared | Gallium arsenide | Detectors | Schottky junction | Photodetectors | Photoconductivity | Electric fields | Junctions | self-powered | photodetector | DETECTORS | PERFORMANCE | ULTRAVIOLET | JUNCTION | ENGINEERING, ELECTRICAL & ELECTRONIC | Photoelectric effect | Photocurrent | Equivalence | Asymmetry | Bias | Constants | Devices
Journal Article
Nanotechnology, ISSN 0957-4484, 02/2018, Volume 29, Issue 11, p. 115501
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2012, Volume 100, Issue 5, pp. 051907 - 051907-4
Solar cells fabricated from a stack of ten periods of InAs quantum dots sandwiched in a GaAs p-n junction were fabricated and tested. The 300K photoresponse... 
EFFICIENCY | PHYSICS, APPLIED | ENHANCEMENT
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2018, Volume 39, Issue 4, pp. 536 - 539
High efficiency all-inorganic quantum dot light emitting diodes are fabricated with metal oxide charge transport layers. Alloyed CdSe/ZnS quantum dots are used... 
Performance evaluation | II-VI semiconductor materials | Quantum dots | electroluminescence | Zinc oxide | Light emitting diodes | Nickel | Current density | solid-state lighting | Light emitting diode | quantum dots | Lightemitting diode | NANOPARTICLES | HOLE TRANSPORT | DEVICES | BRIGHT | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
2000, ISBN 9780444506306, 463
Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and... 
Nitrides | Semiconductors | Materials | Electric conductivity | Electronics & communications engineering | Nitrites
eBook
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 9/2008, Volume 19, Issue 8, pp. 692 - 698
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2015, Volume 118, Issue 8, p. 84501
Journal Article
Sensors (Switzerland), ISSN 1424-8220, 07/2015, Volume 15, Issue 8, pp. 18714 - 18723
A glucose electrochemical sensor based on zinc oxide (ZnO) nanorods was investigated. The hydrothermal sol-gel growth method was utilized to grow ZnO nanorods... 
Zinc oxide nanorods | Electrode | Glucose | Electrochemical sensor | ELECTROCHEMISTRY | electrode | ZNO NANORODS | CHEMISTRY, ANALYTICAL | glucose | INSTRUMENTS & INSTRUMENTATION | zinc oxide nanorods | electrochemical sensor
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2015, Volume 118, Issue 8
InAs/GaAs quantum dot infrared photodetectors with different doping levels were investigated to understand the effect of quantum dot filling on both intraband... 
Near infrared radiation | Self assembly | Electron states | Quantum dots | Doping | Dark current
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 04/2014, Volume 123, pp. 178 - 182
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2009, Volume 94, Issue 17, p. 171102
Photoresponse from multicolor photodetector was measured in the spectral range of 0.4-6.0 mu m as a function of temperature and bias voltage. Devices were... 
gallium arsenide | photodetectors | PHYSICS, APPLIED | PHOTORESPONSE | INFRARED PHOTODETECTORS | DOTS | TEMPERATURE OPERATION | III-V semiconductors | INGAAS
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 01/2011, Volume 44, Issue 2, pp. 025403 - 025403
The influence of template type and residual strain of the buffer layer on the structural properties of GaN/AlN superlattices (SLs) was studied using high... 
DIFFRACTION | PHYSICS, APPLIED | Thinning | Gallium nitrides | Quantum wells | X-rays | Buffers | Aluminum nitride | Dislocations | Strain
Journal Article
Materials Letters, ISSN 0167-577X, 07/2014, Volume 126, pp. 181 - 184
Poly-sized iron pyrite nanohusks with an average length of ~6nm were synthesized in ethanolamine which acts as a solvent and a surfactant at 210°C in a Schlenk... 
Raman spectra | Nanohusks | Band gap | Iron pyrite | Optical properties | Photovoltaics | Electrical engineering | Sulfur compounds | Optoelectronics industry | Analysis | Iron | Chemical properties | Ethanolamines | Raman spectroscopy | Solvents | Optoelectronics | Pyrite | Weight reduction | Spectra | Nanostructure | X-ray photoelectron spectroscopy
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2017, Volume 111, Issue 17, p. 171103
Silicon nanowires were etched vertically in the channel between asymmetrical interdigital electrodes. The self-powered near-infrared photodetector consists of... 
PHYSICS, APPLIED | SOLAR-CELLS | EFFICIENCY | ARRAYS
Journal Article
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