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2011 37th IEEE Photovoltaic Specialists Conference, ISSN 0160-8371, 06/2011, pp. 001734 - 001738
The spectral characterization system presented in this work is one based on a monochromator and it is able to deliver an under - millimeter spot size. The... 
Reflectivity | Photovoltaic systems | Photovoltaic cells | Optical reflection | Junctions | Detectors
Conference Proceeding
Journal of Applied Physics, ISSN 0021-8979, 06/2003, Volume 93, Issue 12, pp. 10140 - 10142
Intersubband transitions in Si-doped molecular beam epitaxy grown GaN/AlGaN multiple quantum wells on c-plane sapphire were investigated using the... 
PHYSICS, APPLIED | NITRIDE SEMICONDUCTORS | WAVELENGTH RANGE | GAN | FIELD | ABSORPTION | MU-M | POLARIZATION | Research | Aluminum | Gallium nitrate | Optical properties | Quantum wells
Journal Article
Materials Research Society Symposium - Proceedings, ISSN 0272-9172, 2002, Volume 692, pp. 403 - 409
Conference Proceeding
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 9/2008, Volume 19, Issue 8, pp. 692 - 698
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2004, Volume 85, Issue 6
Optical absorption spectra of intersubband transitions in In{sub 0.3}Ga{sub 0.7}As/GaAs multiple quantum dots were investigated using the optical absorption as... 
EXCITED STATES | DISLOCATIONS | MOLECULAR BEAM EPITAXY | ABSORPTION SPECTRA | WAVELENGTHS | GALLIUM ARSENIDES | INDIUM ARSENIDES | MATERIALS SCIENCE | ABSORPTION | SEMICONDUCTOR MATERIALS | QUANTUM DOTS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2003, Volume 93, Issue 9, pp. 5824 - 5826
Journal Article
Materials Research Society Symposium - Proceedings, ISSN 0272-9172, 2002, Volume 692, pp. 581 - 586
Conference Proceeding
Journal of Applied Physics, ISSN 0021-8979, 03/2001, Volume 89, Issue 6, pp. 3517 - 3519
Intersubband transitions in 3 MeV He+-ion irradiated GaAs-AlGaAs multiple quantum wells were studied using an optical absorption technique. The intersubband... 
DEFECTS | PHYSICS, APPLIED | PROTON IRRADIATION | PHOTOLUMINESCENCE | LASERS | SUPERLATTICE BARRIERS | DISORDER | GALLIUM-ARSENIDE | DIODES | ELECTRON-IRRADIATION | GAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2001, Volume 78, Issue 15, pp. 2196 - 2198
Isochronal thermal annealing effect on the photoluminescence (PL) spectra of intersublevel transitions in InAs self-assembled quantum dots was investigated.... 
INTERSUBBAND TRANSITIONS | PHYSICS, APPLIED | TEMPERATURE | INFRARED PHOTODETECTORS | WAVELENGTH | ENERGY-LEVELS | WELLS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2003, Volume 82, Issue 15, pp. 2509 - 2511
Fourier-transform infrared spectroscopy technique was employed to investigate the optical absorption coefficient of intersubband transitions in Si-doped... 
INFRARED PHOTODETECTORS | PHYSICS, APPLIED | LAYERS
Journal Article
IEEE Journal of Photovoltaics, ISSN 2156-3381, 11/2016, Volume 6, Issue 6, pp. 1509 - 1514
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2002, Volume 80, Issue 25, pp. 4869 - 4870
Journal Article
Materials Research Society Symposium - Proceedings, ISSN 0272-9172, 2000, Volume 607, pp. 525 - 528
Conference Proceeding
Applied Physics Letters, ISSN 0003-6951, 01/2003, Volume 82, Issue 4, pp. 514 - 516
Photoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition on semi-insulating... 
PHYSICS, APPLIED | DOT-LIKE BEHAVIOR | GAAS | LASER-DIODES | MOLECULAR-BEAM EPITAXY
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/1999, Volume 75, Issue 5, pp. 659 - 661
Localized vibrational modes of carbon-hydrogen complexes in metalorganic chemical vapor deposition grown GaN on sapphire were studied using a Fourier-transform... 
COMPENSATION | PHYSICS, APPLIED | ACCEPTOR
Journal Article
physica status solidi c, ISSN 1862-6351, 01/2010, Volume 7, Issue 1, pp. 64 - 67
We report the growth of cubic GaN/AlN multi quantum well (MQW) structures by plasma‐assisted molecular beam epitaxy on 10 μm thick 3C‐SiC on top of 300 μm... 
78.30.Fs | 78.55.Cr | 78.67.Pt | 81.15.Hi | 61.05.cp | 81.05.Ea | Reproduction | Diffraction | Molecular structure | Gallium nitrides | Superlattices | Molecular beam epitaxy | Spectra | Aluminum nitride
Journal Article
Materials Research Society Symposium Proceedings, ISSN 0272-9172, 2005, Volume 829, pp. 87 - 92
Conference Proceeding
Journal of Applied Physics, ISSN 0021-8979, 11/1996, Volume 80, Issue 10, pp. 6045 - 6049
We present a theoretical study of intersubband transitions in multiple-quantum-well structure, which is designed such that the chemical potential lies between... 
PHYSICS, APPLIED | TEMPERATURE | PHOTODETECTOR | GAAS/ALGAAS | Infrared detectors | Quantum wells | Research
Journal Article
MRS Advances, 2016, Volume 1, Issue 14, pp. 957 - 963
Conference Proceeding
Applied Physics Letters, ISSN 0003-6951, 10/2000, Volume 77, Issue 18, pp. 2867 - 2869
Intersubband transitions in 1 MeV proton-irradiated GaAs/AlGaAs multiple quantum wells were studied using an optical absorption technique and isochronal... 
ELECTRON | PHYSICS, APPLIED | N-TYPE GAAS | INDUCED DEFECTS
Journal Article
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