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Japanese Journal of Applied Physics, ISSN 0021-4922, 04/2015, Volume 54, Issue 4, pp. 44301 - 1-044301-5
High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through... 
ROOM-TEMPERATURE | RADIATION DETECTORS | DESIGN | PHYSICS, APPLIED | ARRAY | SPECTROSCOPY | PERFORMANCE | HIGH-RESOLUTION | PIN DIODE | LATERAL DIFFUSION | Electric potential | X-ray fluorescence | Simulation | X-rays | Silicon | Photons | Drift | Foods | Counting
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 2/2013, Volume 52, Issue 2, pp. 024301 - 024301-5
High-resolution X-ray detectors can be used to detect traces of hazardous or radioactive elements in food, soil, and the human body by measuring the energies... 
ROOM-TEMPERATURE | RADIATION DETECTORS | DESIGN | PHYSICS, APPLIED | ARRAY | SPECTROSCOPY | PERFORMANCE | HIGH-RESOLUTION | PIN DIODE | LATERAL DIFFUSION | Electric potential | X-ray fluorescence | Simulation | X-rays | Silicon | Photons | Drift | Silicon dioxide
Journal Article
The journal of medical investigation, ISSN 1343-1420, 2017, Volume 64, Issue 3.4, pp. 217 - 221
Amyloidosis is often overlooked because its clinical manifestations can mimic those of more-common diseases. It is important to get a precise diagnosis as... 
DAPI | amyloidosis | Amyloidosis
Journal Article
Scientific reports, ISSN 2045-2322, 2017, Volume 7, Issue 1, pp. 6688 - 9
Journal Article
Internal medicine (Tokyo, 1992), ISSN 0918-2918, 2017, Volume 56, Issue 16, pp. 2187 - 2193
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 188 - 191
...Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC Hideharu Matsuura1,a *, Akinobu Takeshita1, Tatsuya... 
Al-doped 4H-SiC | Heavily doped 4H-SiC | Codoped 4H-SiC | Al- and N-codoped 4H-SiC | P-type 4H-SiC | Temperature-dependent resistivity
Journal Article
The journal of medical investigation, ISSN 1343-1420, 2017, Volume 64, Issue 1.2, pp. 146 - 152
Background: Serum albumin concentration (SAC) is a prognostic factor that is affected by many factors such as postural change, liver function and food intake.... 
Chronic kidney disease | Hospitalization | Postural change | Serum albumin concentration | Proteinuria
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 2006, Volume 74, Issue 24
The density (N-A) and energy level (E-A) of an acceptor in a p-type wide-band-gap semiconductor (e.g., SiC, GaN, and diamond) are determined by a least-squares... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | BORON | DIAMOND | MATERIALS SCIENCE, MULTIDISCIPLINARY | ACCEPTOR
Journal Article
Materials science forum, ISSN 0255-5476, 02/2014, Volume 778-780, pp. 685 - 688
Because Al and B (elements of III group) in SiC are deep-level acceptors and these acceptors cannot reduce the resistivity of p-type SiC very much, Mg (element... 
Distribution function for deep-level acceptor | Mg acceptor | Mg acceptor level | Mg implantation | Mg-implanted 4H-SiC | Occupation | Annealing | Energy levels | Silicon carbide | Electrical properties | Magnesium | Density | Distribution functions
Journal Article
Journal Article
Sensors (Switzerland), ISSN 1424-8220, 05/2015, Volume 15, Issue 5, pp. 12022 - 12033
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2004, Volume 95, Issue 8, pp. 4213 - 4218
The distribution function suitable for an acceptor in p-type SiC is investigated using lightly or heavily Al-doped SiC samples. From the temperature dependence... 
CARRIER CONCENTRATION | PHYSICS, APPLIED | SEMICONDUCTOR | DENSITIES | DONOR | IMPURITIES | EXCITED-STATES | Silicon carbide | Research | Semiconductor doping | Analysis
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 9/2008, Volume 19, Issue 8, pp. 720 - 726
Journal Article
PLoS ONE, ISSN 1932-6203, 06/2013, Volume 8, Issue 6, p. e66759
Journal Article
Materials science forum, ISSN 0255-5476, 05/2012, Volume 717-720, pp. 271 - 274
To determine the energy levels of intrinsic defects in high-purity semi-insulating 4H-SiC, we apply discharge current transient spectroscopy (DCTS) that is a... 
Journal Article