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Land Use Policy, ISSN 0264-8377, 2019
The increasing size of chemical plants and rapid growth in residential areas has led to many incompatible land-use scenarios in the last 100 years. In this... 
GIS, Seveso | Risk assessment | Land-use planning | Territorial compatibility
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 11/2019, Volume 25, Issue 6, pp. 1 - 5
Optically pumped vertical external cavity surface emitting lasers (VECSELs) based on flip-chip gain mirrors emitting at the 1.55 μm wavelength range are... 
Temperature measurement | Heating systems | Lasers | optical pumping | semiconductor lasers | diode pumped | Mirrors | Flip-chip devices | Vertical cavity surface emitting lasers | Power generation | vertical emitting lasers
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 11/2015, Volume 21, Issue 6, pp. 414 - 422
We investigate experimentally the impact of photon cavity lifetime variations on the static and dynamic performance of high-speed 1.3-μm wavelength wafer-fused... 
photon lifetime | Gallium arsenide | high speed | Modulation | VCSEL | Etching | Cavity resonators | damping | Distributed Bragg reflectors | Vertical cavity surface emitting lasers | Photonics | modulation
Journal Article
Optics Letters, ISSN 0146-9592, 2014, Volume 39, Issue 16, pp. 4855 - 4858
We present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 μm wavelength region. This is the first demonstration of a... 
Journal Article
ACS Photonics, ISSN 2330-4022, 08/2017, Volume 4, Issue 8, pp. 2018 - 2024
We compare the modulation efficiency of on–off keying (OOK) and four-level pulse-amplitude modulation (PAM4) using 1.3 μm wafer-fusion vertical-cavity... 
wafer-fusion | vertical-cavity surface-emitting laser | pulse-amplitude modulation | optical interconnects | energy efficiency | spectral efficiency
Journal Article
Optics express, ISSN 1094-4087, 12/2014, Volume 22, Issue 26, p. 32180
Digital chemical etching is used to trim the output mirror thickness of wafer-fused VCSELs emitting at a wavelength near 1.5µm. The fine control of the photon... 
Water | Signal Processing, Computer-Assisted - instrumentation | Lasers, Semiconductor | Computer-Aided Design | Equipment Design | Equipment Failure Analysis | Lenses
Journal Article
Optics Express, ISSN 1094-4087, 07/2009, Volume 17, Issue 15, pp. 12981 - 12986
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2019, Volume 115, Issue 17, p. 171105
A high-power InAs quantum dot (QD) vertical-external-cavity surface-emitting laser emitting at 1.5 μm is reported. The active region employs 20 layers of... 
Photonic | Optics | Condensed Matter | Materials Science | Engineering Sciences | Physics
Journal Article
Optics Express, ISSN 1094-4087, 10/2010, Volume 18, Issue 21, pp. 21645 - 21650
3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a... 
FUSION | OPTICS | PHOTODYNAMIC THERAPY | HIGH-POWER | WAVELENGTH | SURFACE-EMITTING LASER
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 07/2019, Volume 27, Issue 15, pp. 21083 - 21091
Spectral dependence of Lamb coupling constant C is experimentally investigated in an InGaAlAs Quantum Wells active medium. An Optically-Pumped... 
NOISE | OPTICS | SEMICONDUCTOR-LASER | GAIN | Photonic | Optics | Condensed Matter | Materials Science | Engineering Sciences | Physics
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 08/2011, Volume 19, Issue 18, pp. 16996 - 17001
We report record-high fundamental mode output power of 8 mW at 0 degrees C and 1.5 mW at 100 degrees C achieved with wafer-fused InAlGaAs-InP/AlGaAs-GaAs 1550... 
POWER | OPTICS
Journal Article
Optics Express, ISSN 1094-4087, 12/2008, Volume 16, Issue 26, pp. 21881 - 21886
Journal Article
OPTICS LETTERS, ISSN 0146-9592, 08/2014, Volume 39, Issue 16, pp. 4855 - 4858
We present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 mu m wavelength region. This is the first demonstration of... 
CONTINUOUS-WAVE | ABSORPTION-SPECTROSCOPY | SURFACE-EMITTING LASERS | INTRACAVITY | CAVITY | 3 W | GENERATION | OPTIMIZATION | OPTICS | Emittance | Wavelengths | Semiconductors | Lasers | Diamonds | Laser cavities | Disks | Spreaders
Journal Article
Optics Express, ISSN 1094-4087, 03/2011, Volume 19, Issue 6, pp. 4827 - 4832
We report coupled VCSEL arrays, emitting at 1.3 μm wavelength, in which both the optical gain/loss and refractive index distributions were defined on different... 
Journal Article
Optics express, ISSN 1094-4087, 01/2013, Volume 21, Issue 2, p. 2355
A single frequency wafer-fused semiconductor disk laser at 1.56 µm with 1 watt of output power and a coherence length over 5 km in fiber is demonstrated. The... 
Energy Transfer | Equipment Design | Equipment Failure Analysis | Lasers, Semiconductor
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 04/2012, Volume 20, Issue 8, pp. 9046 - 9051
We demonstrate an optically pumped semiconductor disk laser operating at 1580 nm with 4.6 W of output power, which represents the highest output power reported... 
HEAT SPREADER | FUSION | OPERATION | WAVELENGTH | INTRACAVITY 2ND-HARMONIC GENERATION | OPTICS | HIGH-POWER | MU-M | EMISSION | SURFACE-EMITTING LASER | Optical Phenomena | Lasers, Solid-State | Equipment Design | Light | Lasers, Semiconductor
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 01/2011, Volume 26, Issue 1, p. 014016
Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers... 
VCSELS | PHYSICS, CONDENSED MATTER | OPERATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Optics Letters, ISSN 0146-9592, 10/2009, Volume 34, Issue 20, pp. 3139 - 3141
Journal Article
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