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09/2016, ISBN 9783035710847, 395
eBook
Applied Physics Letters, ISSN 0003-6951, 08/2007, Volume 91, Issue 8, pp. 082904 - 082904-3
In search of a proper passivation for high- k Ge metal-oxide-semiconductor devices, the authors have deposited high- k dielectric layers on Ge O 2 , grown at... 
OXIDATION | CYCLOTRON-RESONANCE PLASMA | PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2007, Volume 91, Issue 13, p. 133510
The authors show the implications that the free carrier trapping lifetime has on the capacitance-voltage (CV) characterization method applied to... 
PHYSICS, APPLIED
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 10/2013, Volume 103, Issue 16, p. 163904
We have fabricated Cu2ZnSnSe4-CdS-ZnO solar cells with a total area efficiency of 9.7%. The absorber layer was fabricated by selenization of sputtered... 
OPTICAL-PROPERTIES | PHYSICS, APPLIED | CU2ZNSNS4 | FILMS | MODULES | SELENIZATION | Conduction band
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 07/2009, Volume 86, Issue 7-9, pp. 1554 - 1557
In this paper we compare the interface trap distributions D (E) of sulfur treated Al O /In Ga As interfaces, which underwent MOS capacitor and transistor... 
InGaAs on InP | MOSFET | ALD | Inversion channel | III-V | Sulfur treatment | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 11/2019, Volume 27, Issue 11, pp. 905 - 917
Journal Article
08/2018, ISBN 9783035714173, 339
eBook
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 06/2008, Volume 92, Issue 24
The structural and electronic properties of (100)Ge/Ge(M)O-2 interfaces, with M=Al, La, or Hf, are investigated using density functional theory. When a Ge atom... 
PHYSICS, APPLIED | KAPPA GATE DIELECTRICS
Journal Article
12/2012, ISBN 9783037855270, 328
This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination... 
Electrical engineering | Surfaces | Congresses | Semiconductors
eBook
physica status solidi (a), ISSN 1862-6300, 07/2018, Volume 215, Issue 13, pp. 1800043 - n/a
Journal Article
Journal of Materials Chemistry A, ISSN 2050-7488, 2/2018, Volume 6, Issue 6, pp. 2653 - 2663
In this work, the addition of molar concentrations of Na + and/or K + in the form of fluorides during the processing of Cu 2 ZnSnSe 4 absorber layers was... 
PHOTOLUMINESCENCE | TEMPERATURE | POTENTIAL FLUCTUATIONS | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | RADIATIVE RECOMBINATION | CHEMISTRY, PHYSICAL | EFFICIENCY | DEPENDENCE | LAYERS | Solar cells | Salts | Photovoltaic cells | Electrical properties | Sodium | Copper zinc tin selenide | Doping | Absorbers | Fluorides | Potassium | Open circuit voltage | Energy conversion efficiency
Journal Article
Solid State Phenomena, 2016, Volume 255
Conference Proceeding
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