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IEEE Journal of Quantum Electronics, ISSN 0018-9197, 05/2008, Volume 44, Issue 5, pp. 468 - 472
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 11/2009, Volume 21, Issue 22, pp. 1683 - 1685
Journal Article
Nanotechnology, ISSN 0957-4484, 01/2011, Volume 22, Issue 4, pp. 045202 - 045202
For InGaN/GaN based nanorod devices using a top-down etching process, the optical output power is affected by non-radiative recombination due to sidewall... 
DIODE-ARRAYS | PHYSICS, APPLIED | GAN | QUANTUM | MATERIALS SCIENCE, MULTIDISCIPLINARY | INTENSITY | NANOSCIENCE & NANOTECHNOLOGY | GREEN | DEPENDENCE | Carriers | Indium gallium nitrides | Nanocomposites | Quantum wells | Nanomaterials | Nanostructure | Arrays | Devices
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2011, Volume 32, Issue 2, pp. 182 - 184
Partial strain relaxation from the light-emitting diode (LED) with surface-textured p-GaN was observed. The textured device possesses less efficiency droop and... 
Light-emitting diode (LED) | strain relaxation | Temperature | Light emitting diodes | Surface roughness | Rough surfaces | Surface texture | Gallium nitride | Strain | surface texturing | INTERNAL QUANTUM EFFICIENCY | ENGINEERING, ELECTRICAL & ELECTRONIC | Indium gallium nitrides | Gallium nitrides | Photoluminescence | Texturing | Roughening | Light-emitting diodes | Devices | Frozen
Journal Article
Optics Express, ISSN 1094-4087, 07/2008, Volume 16, Issue 14, pp. 10549 - 10556
A practical process to fabricate InGaN/GaN multiple quantum well light emitting diodes (LEDs) with a self-organized nanorod structure is demonstrated. The... 
FABRICATION | OPTICS | EMISSION | GROWTH
Journal Article
Optics Letters, ISSN 0146-9592, 12/2010, Volume 35, Issue 24, pp. 4109 - 4111
Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire... 
SUBSTRATE | FIELD | ENERGY-GAP | NANORODS | DIODES | OPTICS | EMISSION | DEPENDENCE
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 11/2010, Volume 22, Issue 21, pp. 1589 - 1591
Journal Article
Optics Express, ISSN 1094-4087, 04/2010, Volume 18, Issue 8, pp. 7664 - 7669
We fabricated InGaN/GaN nanorod light emitting diode (LED) arrays using nanosphere lithography for nanorod formation, PECVD (plasma enhanced chemical vapor... 
STRAIN | GROWTH | OPTICS
Journal Article
Nanotechnology, ISSN 0957-4484, 05/2010, Volume 21, Issue 21, pp. 215201 - 215201
In this work, n-GZO/a:amorphous-Si(i:intrinsic)/p(+)-Si photodiodes are fabricated. We employed a nanosphere lithographic technique to obtain nanoscale... 
ANTIREFLECTION COATINGS | FILM SOLAR-CELLS | NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | SURFACES | Acceptance | Nanocomposites | Surface chemistry | Planar structures | Nanomaterials | Nanostructure | Devices | Photodiodes | Diodes
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 05/2007, Volume 19, Issue 9, pp. 662 - 664
In this letter, we develop a nearly white-light-emitting device by integrating blue/green emission from a GaN-based light-emitting diode with red emission from... 
Si-nanocrystal | SiO | porous layer | White light | Light-emitting diodes (LEDs) | PHYSICS, APPLIED | BLUE | white light | ELECTROLUMINESCENCE | ENGINEERING, ELECTRICAL & ELECTRONIC | SiO2 porous layer | PHOSPHORS | light-emitting diodes (LEDs) | LUMINESCENCE | SI | SILICON NANOCRYSTALS | OPTICS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2008, Volume 29, Issue 7, pp. 658 - 660
A practical approach to fabricate textured GaN-based light-emitting diodes (LEDs) by nanosphere lithography is presented. By spin coating a monolayer of SiO2... 
Light-emitting diodes (LEDs) | Nanosphere lithography | Extraction efficiency | LIGHT-EMITTING-DIODES | extraction efficiency | light-emitting diodes (LEDs) | nanosphere lithography | TEMPERATURE | OUTPUT | SURFACE | NATURAL LITHOGRAPHY | LAYERS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2007, Volume 91, Issue 9
Journal Article
Nanotechnology, ISSN 0957-4484, 01/2009, Volume 20, Issue 3, pp. 035202 - 035202 (5)
We demonstrate a method of utilizing self-assembled nanorod array reflectors to collect the laterally propagating guided modes from a light emitting diode... 
PHYSICS, APPLIED | OUTPUT | EXTRACTION EFFICIENCY | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | LEDS | DIODE | PHOTONIC CRYSTALS | LAYERS | ENGINEERING, MULTIDISCIPLINARY | TEMPERATURE | SURFACE | IMPROVEMENT | NATURAL LITHOGRAPHY
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 05/2007, Volume 19, Issue 9, pp. 662 - 664
In this letter, we develop a nearly white-light-emitting device by integrating blue/green emission from a GaN-based light-emitting diode with red emission from... 
Radiative recombination | Light emitting diodes | Semiconductor diodes | Gallium nitride | white light | Nanocrystals | Spontaneous emission | Phosphors | Light-emitting diodes (LEDs) | Lighting | Voltage | Si-nanocrystal | Plasma temperature | SiO _{2} porous layer
Journal Article
by Pan, Siao-Cian and Wei, Yau-Huei and Chiu, Allen Wen-Hsiang and Callaghan, Cameron and Maddox, Michael and Maddox, Michael and Maddox, Michael and Peralta, Donna and Liu, James and Liu, James and Mandava, Sree Harsha and Mandava, Sree Harsha and Tarr, Matthew and Lee, Benjamin and Lee, Benjamin and Lee, Benjamin and Boonkaew, Benjawan and Chava, Srinivas and Dash, Srikanta and John, Vijay and Favorito, Luciano Alves and Fortes, Marco Antônio and Pereira-Sampaio, Marco A and Sampaio, Francisco J.B and Sampaio, Francisco J.B and Lo, Joey and Jäger, Wolfgang and Moskalev, Igor and Law, Adrienne and Chew, Ben H and Lange, Dirk and Lange, Dirk and Shilo, Yaniv and Pichamuthu, Joseph E and Lynam, John C and Averch, Timothy D and Vorp, David A and Bechis, Seth and Preston, Mark and Wilson, Kathryn and Barrisford, Glen and Sanchez, Alex and Rodriguez, Dayron and Feldman, Adam and Stampfer, Meir and Cho, Eunyoung and Pedersen, Katja Venborg and Drewes, Asbjoern Mohr and Graumann, Ole and Osther, Susanne Sloth and Olesen, Anne Estrup and Arendt-Nielsen, Lars and Sim, Mei Y and Go, Mei L and Faaborg, Daniel and Li, Roger and Maldonado, Jonathan and Lightfoot, Michelle and Alsyouf, Muhannad and Yeo, Alexander and Olgin, Gaudencio and Arenas, Javier L and Baldwin, D. Duane and Yam, Wai Loon and Lim, Sey Kiat and Ng, Foo Cheong and Ng, Kok Kit and Bylund, Jason and Strup, Stephen and Howard, Dianne and Johnson, Lewis and Lay, Aaron and Lay, Aaron and Bedir, Selahattin and Bedir, Selahattin and Ma, Yun-bo and Gahan, Jeffrey and Gahan, Jeffrey and Cadeddu, Jeffrey and Cadeddu, Jeffrey and Smith, Thomas and Smith, Thomas and Shrotri, Nitin and Shrotri, Nitin and Shrotri, Nitin and Shrotri, Nitin and Lee, Michael and Hodgson, Herbert and Martin, Jacob and Vassantachart, Janna and Arenas, Javier and Khater, Nazih and Fortes, Marco A and Sampaio, Francisco J.B and Favorito, Luciano A and Liao, Donghua and Steffensen, Elena and Gregersen, Hans and Drewes, Asbjoern Mohr and Ravindranathan, Preethi and ...
Journal of Endourology, ISSN 0892-7790, 09/2014, Volume 28, Issue S1, pp. P1 - A316
Journal Article
Optics Express, ISSN 1094-4087, 12/2009, Volume 17, Issue 25, pp. 22912 - 22917
In this work, GZO/ZnO/GaN diodes with the light emitting ZnO layer sandwiched between two SiO2 thin films was fabricated and characterized. We observed a... 
EMITTING-DIODES | ZNO | OPTICS | Ultraviolet Rays | Computer-Aided Design | Semiconductors | Equipment Design | Equipment Failure Analysis | Lighting - instrumentation
Journal Article
Optics Communications, ISSN 0030-4018, 03/2009, Volume 282, Issue 5, pp. 835 - 838
A low-junction-temperature light emitting diode (LED) by selectively ion-implantation in part of the p-type GaN layer is demonstrated. The junction temperature... 
Thermal dissipation | Junction temperature | Ion-implantation | Light emitting diode | OPTICS | Circuit components | Light-emitting diodes | Liquors
Journal Article
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