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2001, Research monograph of Academy of Asia-Pacific Studies, ISBN 9788187644255, Volume 2, iii, 130
Book
Production Planning & Control, ISSN 0953-7287, 04/2019, Volume 30, Issue 5-6, pp. 353 - 368
Competitive landscape, informed consumers and stringent regulations have forced many manufacturing small- and medium-sized enterprises (SMEs) to focus on... 
lean waste | Lean manufacturing | sustainability performance | green manufacturing | Carbon footprint | green waste
Journal Article
Hand surgery : an international journal devoted to hand and upper limb surgery and related research : journal of the Asia-Pacific Federation of Societies for Surgery of the Hand, 2014, Volume 19, Issue 3, pp. 491 - 492
Journal Article
Australian Economic Papers, ISSN 0004-900X, 06/2018, Volume 57, Issue 2, pp. 107 - 141
This paper examines the short‐ and long‐run linkages in pre and post global financial crisis among Middle East and North Africa (MENA) stock markets, between... 
MULTIVARIATE MODELS | CHINA | LINKAGES | RETURNS | VOLATILITIES | COINTEGRATION VECTORS | ECONOMICS | IMPULSE-RESPONSE ANALYSIS | COMMON STOCHASTIC TRENDS | EMERGING EQUITY MARKETS | EFFICIENCY | Stocks | Stock markets | Stock exchanges | Securities markets | Economic crisis
Journal Article
Economic Modelling, ISSN 0264-9993, 01/2013, Volume 30, Issue 1, pp. 595 - 601
In this paper, we use the common structural break test suggested by Bai et al. (1998) to test for a common structural break in the stock prices of the US, the... 
Stock markets | Common structural break test | UNIT-ROOT HYPOTHESIS | RETURNS | CONTAGION | LEVEL | OIL-PRICE SHOCK | MEAN REVERSION | TIME-SERIES | ECONOMICS | GREAT CRASH | TREND | PERMANENT | Business cycles | Statistics | Studies | Stock prices | Economic models | Growth rate | Housing prices | Securities markets
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2009, Volume 106, Issue 6
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2001, Volume 48, Issue 3, pp. 560 - 566
GaN based HFETs are of tremendous interest in applications requiring high power at microwave frequencies. Although excellent current-voltage (I-V)... 
Aluminum compounds | Current collapse | GaN | HEMT | Transistor | HFET | Dispersion | Surface states | AlGaN | Passivation | Research | Piezoelectric devices | Field-effect transistors | Gallium compounds | Collapse | Charging | Gallium nitrides | Drains | Power measurements | Devices | Gates | Microwaves
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 06/2002, Volume 90, Issue 6, pp. 1022 - 1031
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2006, Volume 27, Issue 9, pp. 713 - 715
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2013, Volume 60, Issue 10, pp. 3060 - 3066
Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology.... 
lateral transistors | Gallium nitride (GaN) | Logic gates | HEMTs | Apertures | vertical transistors | Silicon | Gallium nitride | Aluminum gallium nitride | VOLTAGE | PHYSICS, APPLIED | GAN | ENHANCEMENT | HEMTS | CAVET | FIELD-EFFECT TRANSISTORS | LAYERS | ENGINEERING, ELECTRICAL & ELECTRONIC | Measurement | Silicon compounds | Field-effect transistors | Gallium nitrate | Voltage | Innovations | Electric properties
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2004, Volume 25, Issue 3, pp. 117 - 119
Journal Article
Indian Journal of Transplantation, ISSN 2212-0017, 02/2014, Volume 8, pp. S5 - S9
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2001, Volume 48, Issue 8, pp. 1515 - 1521
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2004, Volume 25, Issue 4, pp. 161 - 163
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2004, Volume 51, Issue 10, pp. 1554 - 1561
Drain current dispersion effects are investigated in AlGaN-GaN HEMTs by means of pulsed, transient, and small-signal measurements. Gate- and drain-lag effects... 
Semiconductor device modeling | Aluminum compounds | MODFETs | Gallium compounds | Charge carrier lifetime | Bipolar transistors | Research | Simulation methods | Methods | Gallium arsenide semiconductors | Polarization | Drains | Surface chemistry | Aluminum gallium nitrides | Dispersions | High electron mobility transistors | Devices | Activation energy
Journal Article
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