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Applied Physics Letters, ISSN 0003-6951, 07/2013, Volume 103, Issue 5, p. 53509
The in-situ metalorganic chemical vapor deposition of Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors (MOSCAPs) is reported. Al2O3 is grown using... 
EPITAXY | PHYSICS, APPLIED | TEMPERATURE | HEMTS | SIN PASSIVATION | LAYER | MOCVD | FIELD-EFFECT TRANSISTORS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2007, Volume 102, Issue 8, pp. 083546 - 083546-6
Smooth, high quality N-polar GaN films were realized by metal organic chemical vapor deposition (MOCVD) through growth on misoriented (0001) sapphire... 
SAPPHIRE SUBSTRATE | SURFACE-MORPHOLOGY | BUFFER LAYER | SINGLE-CRYSTALS | PHYSICS, APPLIED | ATOMIC-FORCE MICROSCOPY | MOLECULAR-BEAM EPITAXY | GALLIUM NITRIDE | ALGAN/GAN HETEROSTRUCTURES | FACE | MOCVD | Nucleation | Chemical properties | Chemical vapor deposition | Gallium compounds | Analysis
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2008, Volume 93, Issue 19, pp. 191906 - 191906-3
Growth conditions for AlN in two dimensional (2D) and three dimensional (3D) growth modes were explored on SiC using metal organic chemical vapor deposition.... 
EPITAXIAL LATERAL OVERGROWTH | SAPPHIRE | tensile strength | PHYSICS, APPLIED | X-ray diffraction | ALXGA1-XN | DISLOCATION-DENSITY | atomic force microscopy | dislocation density | MOCVD | semiconductor thin films | semiconductor growth | aluminium compounds | REDUCTION | GAN | SUBSTRATE | PHASE EPITAXY | wide band gap semiconductors | III-V semiconductors
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 08/2008, Volume 55, Issue 4, pp. 2106 - 2112
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2001, Volume 48, Issue 3, pp. 552 - 559
Journal Article
Indian Veterinary Journal, ISSN 0019-6479, 07/2016, Volume 93, Issue 7, pp. 81 - 83
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2008, Volume 310, Issue 6, pp. 1124 - 1131
Journal Article
Electronics Letters, ISSN 0013-5194, 01/2004, Volume 40, Issue 1, pp. 73 - 74
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2006, Volume 27, Issue 4, pp. 214 - 216
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2004, Volume 95, Issue 12, pp. 8456 - 8462
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2013, Volume 103, Issue 3, p. 33509
Traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors (HEMTs) are identified and compared using constant drain-current deep level transient... 
HEMTS | DEFECTS | PHYSICS, APPLIED | PERFORMANCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2000, Volume 77, Issue 2, pp. 250 - 252
The origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally. Based... 
PHYSICS, APPLIED | ALN | GAN | MOBILITY
Journal Article
Solid State Electronics, ISSN 0038-1101, 02/2013, Volume 80, pp. 19 - 22
This paper reports direct evidence for trap-related RF output power loss in GaN high electron mobility transistors (HEMTs) grown by metal organic chemical... 
Deep level transient spectroscopy (DLTS) | Deep level optical spectroscopy (DLOS) | Defect spectroscopy | GaN | High electron mobility transistors (HEMTs) | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Sensors & Actuators: B. Chemical, ISSN 0925-4005, 02/2013, Volume 177, pp. 577 - 582
In this work, detection of live cell biological activity has been confirmed for label-free AlGaN/GaN based biosensors. Live cells were seeded in solution onto... 
Calcium activated ion channels | Label-free pharmacology | Live cells | Biosensor | AlGaN/GaN | ELECTROCHEMISTRY | CHEMISTRY, ANALYTICAL | INSTRUMENTS & INSTRUMENTATION | FIELD-EFFECT TRANSISTORS | Calcium channels | Cells | Detectors
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2008, Volume 93, Issue 11, p. 112101
The incorporation of deep level defects in n-type GaN grown by ammonia-based molecular beam epitaxy (MBE) is studied via systematic adjustment of the NH3/Ga... 
POWER PERFORMANCE | MBE | IMPACT | STATES | PHYSICS, APPLIED | MOLECULAR BEAM EPITAXY | AMMONIA | DEEP LEVEL TRANSIENT SPECTROSCOPY | CRYSTAL GROWTH | INTERSTITIALS | SENSITIVITY | MATERIALS SCIENCE | IMPURITIES | ENERGY GAP | SEMICONDUCTOR MATERIALS | GALLIUM NITRIDES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2014, Volume 105, Issue 6, p. 63506
Journal Article
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