X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
physics, applied (10) 10
gallium nitrides (8) 8
substrates (7) 7
engineering, electrical & electronic (5) 5
organic light emitting diodes (5) 5
electric potential (4) 4
gallium nitride (4) 4
high temperature (4) 4
optics (4) 4
performance evaluation (4) 4
photovoltaic cells (4) 4
quantum wells (4) 4
solar cells (4) 4
x-ray diffraction (4) 4
aluminum nitride (3) 3
breakdown (3) 3
gan (3) 3
iii-v semiconductor materials (3) 3
leakage current (3) 3
light-emitting-diodes (3) 3
metalorganic chemical vapor deposition (3) 3
organic chemistry (3) 3
physics (3) 3
power electronics (3) 3
schottky barrier diodes (3) 3
temperature (3) 3
absorption (2) 2
atomic force microscopy (2) 2
circuits (2) 2
condensed matter - materials science (2) 2
current density (2) 2
cytochrome oxidase subunit i (2) 2
degradation (2) 2
diodes (2) 2
efficiency (2) 2
electrical properties (2) 2
fabrication (2) 2
gallium oxides (2) 2
high voltages (2) 2
hirudinea (2) 2
junction diodes (2) 2
leckstrom (2) 2
light emitting diodes (2) 2
materials science, multidisciplinary (2) 2
microscopy (2) 2
molecular identification (2) 2
nanoscience & nanotechnology (2) 2
open circuit voltage (2) 2
optical properties (2) 2
p-n diodes (2) 2
photonics (2) 2
power (2) 2
quantum efficiency (2) 2
schottky barriers (2) 2
schottky diodes (2) 2
semiconductor (2) 2
semiconductor diodes (2) 2
short circuit currents (2) 2
surface properties (2) 2
temperature measurement (2) 2
threshold switching (2) 2
transmission electron microscopy (2) 2
voltage (2) 2
wide bandgap semiconductor (2) 2
2-photon absorption (1) 1
2nd-harmonic generation (1) 1
absorption spectra (1) 1
absorptivity (1) 1
aln (1) 1
aluminum gallium nitrides (1) 1
anisotropic magnetoresistance (1) 1
anisotropy (1) 1
bandwidth (1) 1
barrier height (1) 1
barriers (1) 1
beta phase (1) 1
biodegradation (1) 1
biodiversity conservation (1) 1
bit error rate (1) 1
boltzmann limit (1) 1
breakdown voltage (1) 1
breakdown-voltage (1) 1
carrier lifetime (1) 1
carrier transport (1) 1
cavity resonators (1) 1
chemical vapor deposition (1) 1
citocromo c oxidasa subunidad i (1) 1
coatings (1) 1
collection (1) 1
comparative studies (1) 1
conduction model (1) 1
contact stresses (1) 1
couplings (1) 1
crystal anisotropy (1) 1
crystal growth (1) 1
crystal structure (1) 1
crystals (1) 1
current carriers (1) 1
current measurement (1) 1
defocusing (1) 1
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Applied Physics Letters, ISSN 0003-6951, 05/2017, Volume 110, Issue 18, p. 181110
We report the basic nonlinear optical properties, namely, two-photon absorption coefficient ( β ), three-photon absorption coefficient ( γ ), and Kerr... 
PLATFORM | PHYSICS, APPLIED | FREQUENCY COMB GENERATION | 2-PHOTON ABSORPTION | Femtosecond | Gallium nitrides | Optical properties | Refractivity | Defocusing | Absorptivity | Photon absorption | Crystal structure | Photonics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2017, Volume 110, Issue 16, p. 161105
We demonstrate the nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on the nonpolar m-plane and semipolar ( 20 2 ¯ 1 ) plane bulk... 
LIGHT-EMITTING-DIODES | PHYSICS, APPLIED | LIMITATIONS | POLARIZATION | TAILS | Solar cells | Gallium nitrides | Quantum wells | Substrates | Carrier transport | Open circuit voltage | Quantum efficiency | Indium gallium nitrides | Photovoltaic cells | Efficiency | Optical properties | Collection | Absorption spectra
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2019, Volume 114, Issue 16, p. 162103
This work demonstrates the construction of p-n heterojunctions between mechanically exfoliated beta-phase gallium oxide (β-Ga2O3) and p-GaN. The detailed... 
DENSITY | PHYSICS, APPLIED | PHOTODETECTORS | FIELD-EFFECT TRANSISTORS | Atomic force microscopy | Gallium oxides | Beta phase | Transmission electron microscopy | Microscopy | Gallium nitrides | Heterojunctions | Threshold voltage | Exfoliation | P-n junctions | Photonics
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2018, Volume 65, Issue 8, pp. 3507 - 3513
This paper reports a comprehensive study on the anisotropic electrical properties of vertical ( \overline {\textsf... 
Gallium | Anisotropic magnetoresistance | Crystal anisotropy | semiconductor | Surface morphology | Schottky barrier diodes (SBDs) | Crystals | gallium oxide | Rough surfaces | Substrates | power electronics | Optical surface waves
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2017, Volume 111, Issue 23, p. 233511
We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray... 
VOLTAGE | PHYSICS, APPLIED | DIODES | GAN | Solar cells | Short circuit currents | Gallium nitrides | Circuits | Quantum wells | X-ray diffraction | High temperature | Thermal stability | Open circuit voltage | Degradation | Transmission lines | Quantum efficiency | Photovoltaic cells | Reliability analysis | Contact stresses | Thermal stresses
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2018, Volume 113, Issue 4, p. 43501
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2019, Volume 40, Issue 3, pp. 375 - 378
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2018, Volume 65, Issue 8, pp. 3507 - 3513
Journal Article
Optics express, ISSN 1094-4087, 06/2019, Volume 27, Issue 12, pp. 17262 - 17273
In this work, we study the crystalline defect induced optical scattering loss inside photonic waveguide. Volume current method is implemented with a close form... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2019, Volume 114, Issue 16
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2018, Volume 65, Issue 8, p. 3507
This paper reports a comprehensive study on the anisotropic electrical properties of vertical ([Formula Omitted]) and (010) [Formula Omitted]-Ga2O3 Schottky... 
Crystal growth | Temperature dependence | Electric potential | Schottky diodes | Electrical properties | Fermi surfaces | EFG (crystal growth) | Conduction model | Substrates | Hopping conduction | Single crystals | Gallium oxides | Anisotropy | Barriers | Comparative studies | Surface properties | Organic light emitting diodes | Leakage current
Journal Article
AIP Advances, ISSN 2158-3226, 10/2018, Volume 8, Issue 10, pp. 105017 - 105017-9
This paper gives an experimental demonstration of non-line-of-sight (NLOS) visible light communication (VLC) using a single 80 μm gallium nitride (GaN) based... 
NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Bit error rate | Gallium nitrides | Modulation | Bandwidth | Optical communication | Light emitting diodes | Line of sight communication
Journal Article
Optics Express, ISSN 1094-4087, 02/2018, Volume 26, Issue 4, pp. 3938 - 3946
We report, for the first time, the characterizations on optical nonlinearities of beta-phase gallium oxide (β-Ga O ), where both (010) β-Ga O and (2¯01) β-Ga O... 
Journal Article
Optics Express, ISSN 1094-4087, 07/2017, Volume 25, Issue 15, pp. 17971 - 17981
Visible light communication (VLC) holds the promise of a high-speed wireless network for indoor applications and competes with 5G radio frequency (RF) system.... 
POWER | OPTICS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2017, Volume 38, Issue 9, pp. 1286 - 1289
This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The... 
Temperature measurement | Schottky barriers | semiconductor | breakdown | Schottky barrier diodes | Ohmic contacts | III-V semiconductor materials | Substrates | power electronics | high temperature | Aluminum nitride | POWER | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 12/2017, Volume 25, Issue 25, pp. 31758 - 31773
We perform comprehensive studies on the fundamental loss mechanisms in III-nitride waveguides in the visible spectral region. Theoretical analysis shows that... 
LIGHT-EMITTING-DIODES | ALN | GALLIUM-NITRIDE | LASER-DIODES | SILICON | 2ND-HARMONIC GENERATION | REFRACTIVE-INDEX | FABRICATION | ULTRAVIOLET | ABSORPTION | OPTICS
Journal Article
Nanotechnology, ISSN 0957-4484, 05/2019, Volume 30, Issue 21, pp. 215201 - 215201
We report the demonstration of a steep-slope field-effect transistor with AlGaN/GaN MIS-HEMTs employing SiO2-based threshold switching devices in series with... 
PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | gallium nitride | Boltzmann limit | steep slope | threshold switching | transistor
Journal Article
No results were found for your search.

Cannot display more than 1000 results, please narrow the terms of your search.