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Journal of Physics D: Applied Physics, ISSN 0022-3727, 09/2018, Volume 51, Issue 37, p. 375101
Journal Article
Reports on Progress in Physics, ISSN 0034-4885, 03/2009, Volume 72, Issue 3, pp. 036502 - 036502 (40)
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps spanning the entire UV and visible ranges. Thin films of III-nitrides are... 
LIGHT-EMITTING-DIODES | TRANSMISSION ELECTRON-MICROSCOPY | THIN-FILMS | VAPOR-PHASE EPITAXY | PHYSICS, MULTIDISCIPLINARY | THERMAL-EXPANSION | QUANTUM-WELL STRUCTURES | MOLECULAR-BEAM EPITAXY | GALLIUM NITRIDE | LATTICE-PARAMETERS | GAN SINGLE-CRYSTALS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2009, Volume 94, Issue 16, pp. 161109 - 161109-3
The effect of ScN interlayer thickness on the defect density of ( 11 2 ¯ 2 ) semipolar GaN grown on m -plane sapphire was studied by transmission electron... 
gallium compounds | EPITAXIAL LATERAL OVERGROWTH | PHYSICS, APPLIED | FIELD | masks | DISLOCATION REDUCTION | dislocation density | MOCVD | vapour phase epitaxial growth | GREEN | LAYERS | LIGHT-EMITTING-DIODES | semiconductor growth | FILMS | scandium compounds | stacking faults | multilayers | transmission electron microscopy | wide band gap semiconductors | III-V semiconductors | sapphire
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 02/2018, Volume 51, Issue 10, p. 105108
The thermal expansion of the wide band gap semiconductor MgSiN2 has been determined using density functional calculations in combination with the... 
thermal expansion | density functional theory | nitrides | AUGMENTED-WAVE METHOD | MGGEN2 | PHYSICS, APPLIED | ALN
Journal Article
Journal of Chemical Physics, ISSN 0021-9606, 10/2015, Volume 143, Issue 14, p. 144104
We have performed density functional calculations using a range of local and semi-local as well as hybrid density functional approximations of the structure... 
AUGMENTED-WAVE METHOD | ENERGY | EXCHANGE | GENERALIZED GRADIENT APPROXIMATION | SOLIDS | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | Diffraction | Semiconductors | Functionals | Constants | Insulators | Modulus of elasticity | Elastic properties | Lattice parameters | Density | Bulk modulus | Physics - Materials Science
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 08/2018, Volume 51, Issue 37
The single crystal elastic constants, polycrystalline elastic moduli and related properties of orthorhombic MgSiN2, MgGeN2 and MgSnN2 have been calculated... 
nitrides | lattice matching | elastic constants | density functional theory | AUGMENTED-WAVE METHOD | PHYSICS, APPLIED | ALN | TEMPERATURE-DEPENDENCE | THERMAL-EXPANSION | AB-INITIO | OPTICAL-PROPERTIES | SPECTROSCOPY | GALLIUM NITRIDE | CRYSTALS | ALUMINUM NITRIDE | Applied Physics | Fysik | Tillämpad fysik | Physical Sciences | Naturvetenskap | Other Physics Topics | Annan fysik | Natural Sciences
Journal Article
J. Mater. Chem. A, ISSN 2050-7488, 2014, Volume 2, Issue 17, pp. 6042 - 6050
This review addresses the recent development and future prospects for Sc-based III-nitride alloys in energy-efficient device applications. Wurtzite-structure... 
Journal Article
Journal of Materials Chemistry A, ISSN 2050-7488, 05/2014, Volume 2, Issue 17, pp. 6042 - 6050
This review addresses the recent development and future prospects for Sc-based III-nitride alloys in energy-efficient device applications. Wurtzite-structure... 
THIN-FILMS | ELECTRONIC-PROPERTIES | ENERGY & FUELS | INGAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | DECOMPOSITION | CHEMISTRY, PHYSICAL | BAND-GAP | LIGHT-EMITTING-DIODES | PIEZOELECTRIC RESPONSE | GROWTH | SCANDIUM NITRIDE | MICROSTRUCTURE | Semiconductors | Sustainability | Alloys | Piezoelectricity | Epitaxial growth | Devices | Photonic band gaps | Energy gaps (solid state)
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2017, Volume 110, Issue 16, p. 162103
Fluctuations in local alloy composition on small length scales may have a significant effect on device performance, particularly when there is a large... 
DIMENSIONS | PHYSICS, APPLIED | SINGLE | LUMINESCENCE | INGAN | THRESHOLDS | ELECTRONIC-STRUCTURE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2009, Volume 105, Issue 11, pp. 113501 - 113501-7
X-ray diffraction (XRD) is widely used for the rapid evaluation of the structural quality of thin films. In order to determine how defect densities relate to... 
QUANTUM-WELLS | GAN | PHYSICS, APPLIED | Dislocations in crystals | Usage | Diffraction | Analysis | X-rays | Mechanical properties | Structure | Gallium compounds | Electric properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2019, Volume 125, Issue 16, p. 165701
Threading dislocations in thick layers of InxGa1−xN (5% < x < 15%) have been investigated by means of cathodoluminescence, time-resolved cathodoluminescence,... 
LIGHT-EMITTING-DIODES | PHYSICS, APPLIED | CASINO | TIME | QUANTUM-WELLS | CENTERS | EMISSION
Journal Article
Physical Review Letters, ISSN 0031-9007, 07/2013, Volume 111, Issue 2, p. 025502
Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in undoped GaN films with... 
THREADING EDGE DISLOCATION | PHYSICS, MULTIDISCIPLINARY | SCREW DISLOCATIONS | GROWTH
Journal Article
Journal of Physics Condensed Matter, ISSN 0953-8984, 06/2015, Volume 27, Issue 24, p. 245901
We present a computational study of spontaneous polarization and piezoelectricity in ScxAl1-xN alloys in the compositional range from x = 0 to x = 0.5,... 
polarization | nitride | piezoelectricity | berry phase | ScAlN | THIN-FILMS | AUGMENTED-WAVE METHOD | PHYSICS, CONDENSED MATTER | ALLOYS | SOLIDS | ALUMINUM NITRIDE | MACROSCOPIC POLARIZATION
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2014, Volume 105, Issue 11, p. 112108
Density functional theory calculations and electron energy loss spectroscopy indicate that the electronic structure of ordered orthorhombic MgSiN2 is similar... 
AUGMENTED-WAVE METHOD | PHYSICS, APPLIED | FILMS | AB-INITIO | GROWTH | OPTICAL-PROPERTIES | BASIS-SET
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2017, Volume 122, Issue 8, p. 85705
We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN2 and MgGeN2 using density functional... 
AUGMENTED-WAVE METHOD | PHYSICS, APPLIED | ALN | DIELECTRIC-CONSTANT | APPROXIMATION | SPECTROSCOPY | NITRIDE | FORCE-CONSTANTS | AB-INITIO CALCULATION | PHONON DISPERSIONS | Usage | Lattice dynamics | Analysis | Density functionals | Heat capacity | Research | Band theory (Physics)
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2009, Volume 106, Issue 7, pp. 073513 - 073513-9
A series of GaN films were grown by metalorganic vapor phase epitaxy on nitrided sapphire using an initial annealed low-temperature nucleation layer (LT-NL),... 
DENSITY | SAPPHIRE | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | GROWN GAN | PHASE EPITAXY | DIODES | MOVPE | EFFICIENCY | MICROSTRUCTURE | Atomic force microscopy | Dislocations in crystals | Annealing | Usage | Diffraction | Sapphires | Analysis | X-rays | Mechanical properties | Gallium compounds | Electric properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2019, Volume 125, Issue 16
Threading dislocations in thick layers of InxGa1−xN (5% < x < 15%) have been investigated by means of cathodoluminescence, time-resolved cathodoluminescence,... 
Transmission electron microscopy | Threading dislocations | Optical properties | Molecular dynamics | Indium | Cathodoluminescence | Diffusion length | Bundles
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2010, Volume 97, Issue 26, pp. 261907 - 261907-3
We demonstrate that significant dislocation movement occurs below the surface of heteroepitaxial c -plane GaN films during their growth by metalorganic vapor... 
DENSITY | VAPOR-PHASE EPITAXY | DEFECTS | PHYSICS, APPLIED | REDUCTION | MOVPE | LAYERS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2017, Volume 122, Issue 8
We have determined the structural and lattice dynamical properties of the orthorhombic, wide band gap semiconductors MgSiN2 and MgGeN2 using density functional... 
Raman spectra | Tensors | Wurtzite | Semiconductors | Mathematical analysis | Dielectric properties | Density functional theory | Band gap | Thermodynamic properties | Aluminum nitride
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2011, Volume 109, Issue 7, pp. 073509 - 073509-7
Dislocations in undoped GaN move in response to the in-plane tensile stress present during film growth. Dislocation movement during growth relieves tensile... 
LIGHT-EMITTING-DIODES | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | THREADING DISLOCATIONS | REDUCTION | WURTZITE GAN | PHASE EPITAXY | MOVPE | Gallium nitrate | Silicon | Electric properties
Journal Article
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