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Journal of Applied Physics, ISSN 0021-8979, 12/2019, Volume 126, Issue 21, p. 215103
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e., due to electronic transport only) of... 
PHYSICS, APPLIED | TEMPERATURE-DEPENDENCE | RESISTIVITY | MOBILITY | DIRECT-GAP
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2011, Volume 109, Issue 11, pp. 113703 - 113703-5
First-principles electronic structure methods are used to predict the rate of n -type carrier scattering due to phonons in highly-strained Ge. We show that... 
ROOM-TEMPERATURE | TRANSPORT | PHYSICS, APPLIED | SEMICONDUCTORS | STRENGTH | BAND-STRUCTURE | NANOWIRES | Thermal properties | Usage | Nanocrystals | Germanium | Scattering (Physics) | Complementary metal oxide semiconductors | Methods
Journal Article
PHYSICAL REVIEW LETTERS, ISSN 0031-9007, 08/2019, Volume 123, Issue 8, p. 087401
We present a first-principles method for the calculation of the temperature-dependent relaxation of symmetry-breaking atomic driving forces in photoexcited... 
DYNAMICS | COHERENT THZ PHONONS | PHYSICS, MULTIDISCIPLINARY | DISPLACIVE EXCITATION | PHASE-TRANSITION | Temperature dependence | First principles | Broken symmetry | Decay rate | Mathematical analysis | Phonons | Bismuth | Antimony | Photons | Symmetry
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2011, Volume 110, Issue 12, pp. 123706 - 123706-7
First-principles electronic structure methods are used to predict the mobility of n -type carrier scattering in strained SiGe. We consider the effects of... 
TRANSPORT | PHYSICS, APPLIED | PARAMETERS | POTENTIALS | MOBILITY | SEMICONDUCTORS | Measurement | Thermal properties | Usage | Silicon alloys | Semiconductors | Stress-strain curves | Analysis | Optical properties | Plasticity | Electron-electron interactions | Thermoelectricity | Methods
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 07/2012, Volume 86, Issue 3
We use first-principles electronic structure methods to show that the piezoresistive strain gauge factor of single-crystalline bulk n-type silicon-germanium... 
PHYSICS, CONDENSED MATTER | TEMPERATURES | SEMICONDUCTORS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 07/2008, Volume 78, Issue 3
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 12/2015, Volume 7, Issue 48, pp. 26470 - 26481
The growth, structural and optical properties, and energy band alignments of tensile-strained germanium (ε-Ge) epilayers heterogeneously integrated on silicon... 
molecular beam epitaxy | germanium | optical domain | laser integration | efficient cost-effective light sources | heterostructure | HIGH-PERFORMANCE | PHOTOLUMINESCENCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | ELECTROABSORPTION MODULATOR | BAND-EDGE | TRANSISTORS | INTEGRATION | SI | GAP | OPTICAL GAIN | GE
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 08/2012, Volume 86, Issue 7
Journal Article
Physical Review Letters, ISSN 0031-9007, 04/2013, Volume 110, Issue 17, p. 177404
We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the... 
INTERFACES | ROOM-TEMPERATURE | DOTS | PHYSICS, MULTIDISCIPLINARY
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2012, Volume 112, Issue 6, p. 69901
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2012, Volume 112, Issue 6
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 09/2012, Volume 112, Issue 6
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 04/2012, Volume 85, Issue 16
A first-principles method is applied to find the intra and intervalley n-type carrier scattering rates for substitutional carbon in silicon. The method builds... 
PHYSICS, CONDENSED MATTER | TRANSPORT | SI1-YCY | DEFECTS | SUBSTITUTIONAL-CARBON PAIR | INTERSTITIAL-CARBON | SILICON | BAND-GAPS | QUASI-NEWTON METHODS | RESISTIVITY | PRESSURE COEFFICIENTS
Journal Article
Physical Review Letters, ISSN 0031-9007, 2006, Volume 97, Issue 9
Journal Article
Physical Review B, ISSN 1098-0121, 08/2012, Volume 86, Issue 7
Journal Article
Physical Review B (Condensed Matter and Materials Physics), ISSN 1098-0121, 07/2012, Volume 86, Issue 3
We use first-principles electronic structure methods to show that the piezoresistive strain gauge factor of single-crystalline bulk n-type silicon-germanium... 
Condensed matter | Strain gauges | Alloys | Silicon | Conduction band | Piezoresistance | Tuning | Strain
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 04/2007, Volume 75, Issue 15
The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements... 
STRAINED SI | PHYSICS, CONDENSED MATTER | HOLE MOBILITY | ELECTRON-MOBILITY | SEMICONDUCTORS | SUBSTRATE | DEVICES | SIXGE1-X ALLOYS | MODEL
Journal Article
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