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Physical Review B, ISSN 1098-0121, 07/2008, Volume 78, Issue 3
Journal Article
Physical Review B (Condensed Matter and Materials Physics), ISSN 1098-0121, 04/2012, Volume 85, Issue 16
A first-principles method is applied to find the intra and intervalley n-type carrier scattering rates for substitutional carbon in silicon. The method builds... 
Interpolation | Charging | Construction | Condensed matter | Scattering | Silicon | Mathematical models | Carbon | Residual resistivity
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 04/2007, Volume 75, Issue 15
Journal Article
Physical review letters, ISSN 0031-9007, 09/2006, Volume 97, Issue 9, p. 096606
First-principles electronic structure methods are used to find the rates of intravalley and intervalley n-type carrier scattering due to alloy disorder in... 
Journal Article
Physical Review Letters, ISSN 0031-9007, 09/2006, Volume 97, Issue 9
Journal Article
Chinese Journal of Physics, ISSN 0577-9073, 02/2011, Volume 49, Issue 1, pp. 209 - 213
We calculate the effects of strain on the intra- and intervalley electronphonon matrix elements of Ge-like SiGe. Second-order terms of the strain are added to... 
PHONON | HG1-XCDXTE | PHYSICS, MULTIDISCIPLINARY | GAP
Journal Article
Physical Review B, ISSN 1098-0121, 04/2007, Volume 75, Issue 15
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2016, Volume 9755
Conference Proceeding
11/2019
We use first-principles electronic structure methods to calculate the electronic thermoelectric properties (i.e. due to electronic transport only) of... 
Physics - Materials Science
Journal Article
Physical Review B, ISSN 2469-9950, 08/2018, Volume 98, Issue 8
We calculate the uniaxial and dilatation acoustic deformation potentials Xi(L)(u) and Xi(L)(d) of the conduction band L valleys of PbTe from first principles,... 
PBSE | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | TEMPERATURE-DEPENDENCE | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | TOTAL-ENERGY CALCULATIONS | TRANSPORT PHENOMENA | PSEUDOPOTENTIALS | CURRENT CARRIERS | LEAD CHALCOGENIDES | SOLIDS | SCATTERING | Physics - Materials Science
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 09/2012, Volume 112, Issue 6
Journal Article
Journal of Physics: Condensed Matter, ISSN 0953-8984, 05/2004, Volume 16, Issue 17, pp. S1437 - S1452
We review the theoretical description of spin-orbit (SO) scattering and electron spin resonance (ESR) in carbon nanotubes. Particular emphasis is laid on the... 
LIQUID BEHAVIOR | PHYSICS, CONDENSED MATTER | QUANTUM WIRES | TEMPERATURE
Journal Article
PHYSICAL REVIEW LETTERS, ISSN 0031-9007, 09/2006, Volume 97, Issue 9
First-principles electronic structure methods are used to find the rates of intravalley and intervalley n-type carrier scattering due to alloy disorder in... 
PSEUDOPOTENTIALS | TRANSPORT | PHYSICS, MULTIDISCIPLINARY | MOBILITY | SEMICONDUCTORS | ELECTRON THEORY | SYSTEMS | DEVICES | SIXGE1-X ALLOYS | MODEL
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 04/2007, Volume 75, Issue 15
The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements... 
STRAINED SI | PHYSICS, CONDENSED MATTER | HOLE MOBILITY | ELECTRON-MOBILITY | SEMICONDUCTORS | SUBSTRATE | DEVICES | SIXGE1-X ALLOYS | MODEL
Journal Article
Physical Review B, ISSN 2469-9950, 05/2018, Volume 97, Issue 19
Germanium is an indirect semiconductor which attracts particular interest as an electronics and photonics material due to low indirect-to-direct band... 
ROOM-TEMPERATURE | PHYSICS, CONDENSED MATTER | GERMANIUM | TEMPERATURE-DEPENDENCE | MOBILITY | SEMICONDUCTORS | SILICON | DEVICES | ELECTROREFLECTANCE | GAAS
Journal Article
PHYSICAL REVIEW B, ISSN 2469-9950, 07/2008, Volume 78, Issue 3
First-principles electronic structure methods are used to find the rates of inelastic intravalley and intervalley n-type carrier scattering in Si1-xGex alloys.... 
PHYSICS, CONDENSED MATTER | DEFORMATION POTENTIALS | MOBILITY | SEMICONDUCTORS | SILICON | ELECTRON THEORY | BAND-GAPS | UNIAXIAL-STRESS | SIXGE1-X ALLOYS | SIGE ALLOYS | PRESSURE COEFFICIENTS
Journal Article
11/2019
We investigate the generation of phonons on picosecond timescales and the relaxation of carriers in multiple conduction band valleys of photo-excited Ge by... 
Physics - Mesoscale and Nanoscale Physics
Journal Article
2014 20th International Conference on Ion Implantation Technology (IIT), 06/2014, pp. 1 - 4
The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of... 
Temperature measurement | junction | Annealing | Ion implantation | Semiconductor lasers | Laser thermal annealing | leakage current | dopant activation | Semiconductor diodes | Leakage currents | Junctions | ideality factor | Ge
Conference Proceeding
Physical Review. B, Covering Condensed Matter and Materials Physics, ISSN 2469-9950, 05/2018, Volume 97, Issue 19
Germanium is an indirect semiconductor which attracts particular interest as an electronics and photonics material due to low indirect-to-direct band... 
Buffer layers | Band structure | Indium gallium arsenides | Strain analysis | Energy gap | Tensile strain | Band structure of solids | Photoluminescence | Germanium | Photonics
Journal Article
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