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PHYSICAL REVIEW LETTERS, ISSN 0031-9007, 08/2019, Volume 123, Issue 8, p. 087401
We present a first-principles method for the calculation of the temperature-dependent relaxation of symmetry-breaking atomic driving forces in photoexcited... 
DYNAMICS | COHERENT THZ PHONONS | PHYSICS, MULTIDISCIPLINARY | DISPLACIVE EXCITATION | PHASE-TRANSITION | Temperature dependence | First principles | Broken symmetry | Decay rate | Mathematical analysis | Phonons | Bismuth | Antimony | Photons | Symmetry
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2011, Volume 109, Issue 11, pp. 113703 - 113703-5
First-principles electronic structure methods are used to predict the rate of n -type carrier scattering due to phonons in highly-strained Ge. We show that... 
ROOM-TEMPERATURE | TRANSPORT | PHYSICS, APPLIED | SEMICONDUCTORS | STRENGTH | BAND-STRUCTURE | NANOWIRES | Thermal properties | Usage | Nanocrystals | Germanium | Scattering (Physics) | Complementary metal oxide semiconductors | Methods
Journal Article
EPJ Photovoltaics, ISSN 2105-0716, 10/2018, Volume 9, p. 10
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2011, Volume 110, Issue 12, pp. 123706 - 123706-7
First-principles electronic structure methods are used to predict the mobility of n -type carrier scattering in strained SiGe. We consider the effects of... 
TRANSPORT | PHYSICS, APPLIED | PARAMETERS | POTENTIALS | MOBILITY | SEMICONDUCTORS | Measurement | Thermal properties | Usage | Silicon alloys | Semiconductors | Stress-strain curves | Analysis | Optical properties | Plasticity | Electron-electron interactions | Thermoelectricity | Methods
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 07/2012, Volume 86, Issue 3
We use first-principles electronic structure methods to show that the piezoresistive strain gauge factor of single-crystalline bulk n-type silicon-germanium... 
PHYSICS, CONDENSED MATTER | TEMPERATURES | SEMICONDUCTORS
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2017, Volume 10108
Conference Proceeding
ACS Applied Materials & Interfaces, ISSN 1944-8244, 12/2015, Volume 7, Issue 48, pp. 26470 - 26481
The growth, structural and optical properties, and energy band alignments of tensile-strained germanium (ε-Ge) epilayers heterogeneously integrated on silicon... 
molecular beam epitaxy | germanium | optical domain | laser integration | efficient cost-effective light sources | heterostructure | HIGH-PERFORMANCE | PHOTOLUMINESCENCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | ELECTROABSORPTION MODULATOR | BAND-EDGE | TRANSISTORS | INTEGRATION | GAP | OPTICAL GAIN
Journal Article
Physical Review Letters, ISSN 0031-9007, 04/2013, Volume 110, Issue 17, p. 177404
We studied the optical properties of a strain-induced direct-band-gap Ge quantum well embedded in InGaAs. We showed that the band offsets depend on the... 
INTERFACES | ROOM-TEMPERATURE | DOTS | PHYSICS, MULTIDISCIPLINARY
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 04/2012, Volume 85, Issue 16
A first-principles method is applied to find the intra and intervalley n-type carrier scattering rates for substitutional carbon in silicon. The method builds... 
PHYSICS, CONDENSED MATTER | TRANSPORT | SI1-YCY | DEFECTS | SUBSTITUTIONAL-CARBON PAIR | INTERSTITIAL-CARBON | SILICON | BAND-GAPS | QUASI-NEWTON METHODS | RESISTIVITY | PRESSURE COEFFICIENTS
Journal Article
Physical Review Letters, ISSN 0031-9007, 2006, Volume 97, Issue 9
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2016, Volume 9742
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2016, Volume 9755
Conference Proceeding
Physical Review. B, Covering Condensed Matter and Materials Physics, ISSN 2469-9950, 08/2018, Volume 98, Issue 8, p. 085201
We calculate the uniaxial and dilatation acoustic deformation potentials ΞuL and ΞdL of the conduction band L valleys of PbTe from first principles, using the... 
Perturbation theory | Conduction bands | First principles | Intermetallic compounds | Mathematical analysis | Valleys | Spin-orbit interactions | Acoustics | Deformation effects | Electron transport | Density | Stretching
Journal Article
Physical Review B, ISSN 2469-9950, 08/2018, Volume 98, Issue 8
We calculate the uniaxial and dilatation acoustic deformation potentials Xi(L)(u) and Xi(L)(d) of the conduction band L valleys of PbTe from first principles,... 
PBSE | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | TEMPERATURE-DEPENDENCE | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | TOTAL-ENERGY CALCULATIONS | TRANSPORT PHENOMENA | PSEUDOPOTENTIALS | CURRENT CARRIERS | LEAD CHALCOGENIDES | SOLIDS | SCATTERING | Physics - Materials Science
Journal Article
12/2017
Strain is commonly used in metal-oxide-semiconductor technologies to boost on-state performance. This booster has been in production for at least a decade.... 
Physics - Mesoscale and Nanoscale Physics
Journal Article
03/2019
We present a first-principles method for the calculation of the temperature-dependent relaxation of symmetry-breaking atomic driving forces in photoexcited... 
Physics - Materials Science
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 04/2007, Volume 75, Issue 15
The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements... 
STRAINED SI | PHYSICS, CONDENSED MATTER | HOLE MOBILITY | ELECTRON-MOBILITY | SEMICONDUCTORS | SUBSTRATE | DEVICES | SIXGE1-X ALLOYS | MODEL
Journal Article
PHYSICAL REVIEW B, ISSN 2469-9950, 07/2008, Volume 78, Issue 3
First-principles electronic structure methods are used to find the rates of inelastic intravalley and intervalley n-type carrier scattering in Si1-xGex alloys.... 
PHYSICS, CONDENSED MATTER | DEFORMATION POTENTIALS | MOBILITY | SEMICONDUCTORS | SILICON | ELECTRON THEORY | BAND-GAPS | UNIAXIAL-STRESS | SIXGE1-X ALLOYS | SIGE ALLOYS | PRESSURE COEFFICIENTS
Journal Article
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, 07/2017, pp. 802 - 804
Conference Proceeding
by Hamed, Tareq Abu and Adamovic, Nadja and Aeberhard, Urs and Alonso-Alvarez, Diego and Amin-Akhlaghi, Zoe and Auf Der Maur, Matthias and Beattie, Neil and Bednar, Nikola and Berland, Kristian and Birner, Stefan and Califano, Marco and Capan, Ivana and Cerne, Bostjan and Chilibon, Irinela and Connolly, James P and Juan, Frederic Cortes and Coutinho, Jose and David, Christin and Deppert, Knut and Donchev, Vesselin and Drev, Marija and Ehlen, Boukje and Ekins-Daukes, Nicholas and Even, Jacky and Fara, Laurentiu and Marron, David Fuertes and Gagliardi, Alessio and Garrido, Blas and Gianneta, Violetta and Gomes, Maria and Guillemoles, Jean Francois and Guina, Mircea and Halme, Janne and Hocevar, Mateja and Jacak, Lucjan and Jacak, Witold and Jaksic, Zoran and Joseph, Lejo K and Kassavetis, Spyridon and Kazukauskas, Vaidotas and Kleider, Jean Paul and Kluczyk, Katarzyna and Kopecek, Radovan and Krasovec, Ursa Opara and Lazzari, Jean Louis and Lifshitz, Efrat and Loncaric, Martin and Madsen, Søren Peder and Vega, Antonio Marti and Mencaraglia, Denis and Messing, Maria E and Armando, Felipe Murphy and Nassiopoulou, Androula G and Neijm, Ahmed and Nemcsics, Akos and Neto, Victor and Pedesseau, Laurent and Persson, Clas and Petridis, Konstantinos and Popescu, Lacramioara and Pucker, Georg and Radovanović, Jelena and Rimada, Julio C and Ristova, Mimoza and Savic, Ivana and Savin, Hele and Sendova-Vassileva, Marushka and Sengul, Abdurrahman and Silva, José and Steiner, Ullrich and Storch, Jan and Stratakis, Emmanuel and Tao, Shuxia and Tomanek, Pavel and Tomić, Stanko and Tukiainen, Antti and Turan, Rasit and Ulloa, Jose Maria and Wang, Shengda and Yuksel, Fatma and Zadny, Jaroslav and Zarbakhsh, Javad
EPJ Photovoltaics, ISSN 1099-159X, 01/2018, Volume 9
Photovoltaics is amongst the most important technologies for renewable energy sources, and plays a key role in the development of a society with a smaller... 
Solar cells | Condensed Matter Physics | Third generation photovoltaics | Naturresursteknik | Semiconductors | Device simulation | Teknik | Fysik | Engineering and Technology | Physical Sciences | Naturvetenskap | Multi-scale modelling | Environmental Engineering | Den kondenserade materiens fysik | Nano structures | Energisystem | Energy Systems | Natural Sciences
Journal Article
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