X
Search Filters
Format Format
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
physics, applied (23) 23
graphene (18) 18
silicon carbide (17) 17
epitaxy (13) 13
epitaxial growth (11) 11
siliciumcarbid (11) 11
condensed matter - mesoscale and nanoscale physics (10) 10
graphen (10) 10
growth (9) 9
basal plane dislocations (8) 8
engineering, electrical & electronic (8) 8
epitaxial graphene (8) 8
materials science, multidisciplinary (8) 8
substrates (8) 8
condensed matter - materials science (7) 7
defects (6) 6
epitaxialschicht (6) 6
graphite (6) 6
transistors (6) 6
4h-sic (5) 5
carrier mobility (5) 5
chemical vapor deposition (5) 5
fets (5) 5
physics, condensed matter (5) 5
silicon (5) 5
analysis (4) 4
cvd (4) 4
devices (4) 4
electric properties (4) 4
functionalization (4) 4
lifetime (4) 4
materials science (4) 4
nitrogen (4) 4
physics - mesoscale and nanoscale physics (4) 4
sic (4) 4
silicon compounds (4) 4
silicon-carbide (4) 4
substrat (4) 4
transport (4) 4
bpd reduction (3) 3
chemisches aufdampfen (3) 3
chemistry, physical (3) 3
crystal defects (3) 3
crystallography (3) 3
diodes (3) 3
educational institutions (3) 3
elektrische eigenschaft (3) 3
epilayers (3) 3
epitaxiales wachstum (3) 3
epitaxialwachstum (3) 3
feldeffekttransistor (3) 3
half-loop array (3) 3
laboratories (3) 3
ladungsträgerdichte (3) 3
logic gates (3) 3
multilayers (3) 3
oxygen (3) 3
raman spectroscopy (3) 3
siliciumverbindung (3) 3
spectroscopy (3) 3
stickstoff (3) 3
wafer (3) 3
3c-sic (2) 2
a1. etching (2) 2
a3. chemical vapor deposition (2) 2
aktivierungsenergie (2) 2
arrays (2) 2
b1. silicon carbide (2) 2
bilayer graphene (2) 2
bpd (2) 2
breakdown (2) 2
carrier transport (2) 2
characterization and evaluation of materials (2) 2
chemical-vapor-deposition (2) 2
chemistry, multidisciplinary (2) 2
condensed matter (2) 2
contact resistance (2) 2
current density (2) 2
current measurement (2) 2
deposition (2) 2
diffusion length (2) 2
dislocation glide (2) 2
doppelschicht (2) 2
electric contacts (2) 2
electric potential (2) 2
electronics (2) 2
electronics and microelectronics, instrumentation (2) 2
elektrische grösse (2) 2
elektron (2) 2
etching (2) 2
evaporation (2) 2
field-effect transistor (2) 2
funktionalisierung (2) 2
halbleiter mit grosser energielücke (2) 2
halbleiterdotierung (2) 2
halbleiterepitaxialschicht (2) 2
hall effect (2) 2
heterojunction (2) 2
heterojunctions (2) 2
heterostructures (2) 2
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Applied Physics Letters, ISSN 0003-6951, 09/2009, Volume 95, Issue 12, pp. 122102 - 122102-3
Epitaxial graphene (EG) films were grown in vacuo by silicon sublimation from the (0001) and ( 000 1 ¯ ) faces of 4 H -SiC and 6 H -SiC. Hall effect mobilities... 
PHYSICS, APPLIED | SIO2
Journal Article
ECS Transactions, ISSN 1938-5862, 2009, Volume 19, Issue 5, pp. 117 - 124
ECS Trans. 19, 117 (2009) An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a... 
Conference Proceeding
IEEE Electron Device Letters, ISSN 0741-3106, 10/2011, Volume 32, Issue 10, pp. 1343 - 1345
This letter reports the impact of surface morphology on the carrier transport and radio-frequency performance of graphene FETs formed on epitaxial graphene... 
Performance evaluation | Silicon carbide | Field-effect transistor (FET) | Morphology | radio-frequency (RF) | Logic gates | Epitaxial growth | FETs | graphene | TRANSISTORS | GROWTH | HIGH-FREQUENCY | ENGINEERING, ELECTRICAL & ELECTRONIC | Graphene | Terraces | Epitaxy | Carrier mobility | Carrier transport | Channels | Physics - Mesoscale and Nanoscale Physics
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2010, Volume 31, Issue 4, pp. 260 - 262
Journal Article
MRS bulletin, ISSN 0883-7694, 12/2012, Volume 37, Issue 12, pp. 1149 - 1157
Epitaxial graphene (EG) has attracted considerable interest because of its extraordinary properties and ability to be synthesized on the wafer scale. These... 
Fundamentals | 6H-SIC | EVAPORATION | TRANSISTORS | PHYSICS, APPLIED | SI-FACE | CARRIER MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | HETEROEPITAXIAL GRAPHITE | SILICON-CARBIDE | BILAYER GRAPHENE | ELECTRONICS
Journal Article
Journal of Physics Condensed Matter, ISSN 0953-8984, 04/2015, Volume 27, Issue 16, p. 164202
Energy relaxation of hot Dirac fermions in bilayer epitaxial graphene is experimentally investigated by magnetotransport measurements on Shubnikov-de Haas... 
bilayer graphene | energy loss rate | hot carriers | magnetotransport | PHYSICS, CONDENSED MATTER | TRANSPORT | TEMPERATURES | ELECTRONS | HETEROSTRUCTURES | BERRYS PHASE | OSCILLATIONS | 2-DIMENSIONAL GAS | Physics - Mesoscale and Nanoscale Physics | Condensed Matter Physics | Den kondenserade materiens fysik
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2010, Volume 96, Issue 22, p. 222103
Epitaxial graphene layers were grown on the C-face of 4H-SiC and 6H-SiC using an argon-mediated growth process. Variations in growth temperature and pressure... 
nucleation | chemical vapour deposition | PHYSICS, APPLIED | CARRIER MOBILITY | GROWTH | epitaxial layers | island structure | GRAPHITE | SILICON-CARBIDE | STRAIN | graphene | THICKNESS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2014, Volume 104, Issue 22, p. 224102
Journal Article
Carbon, ISSN 0008-6223, 12/2014, Volume 80, Issue 1, pp. 75 - 81
Epitaxial graphene is grown on a non-polar n+ 6H-SiC m-plane substrate and studied using atomic scale scanning tunneling microscopy. Multilayer graphene is... 
CHEMISTRY, PHYSICAL | TRANSPORT | GRAPHITE | MATERIALS SCIENCE, MULTIDISCIPLINARY | Grain boundaries | Silicon carbide | Graphene | Microscope and microscopy | Graphite | Atoms | Multilayers | Scanning tunneling microscopy | Amplitudes | Wavelengths | Modulation | Epitaxial growth | Moire patterns
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2011, Volume 98, Issue 24, pp. 243111 - 243111-3
Ambient-environment Kelvin probe microscopy of many ( 10   μ m ) 2 areas of single-layer graphene on SiC(0001) shows area-to-area rms surface potential... 
PHYSICS, APPLIED | EPITAXIAL GRAPHENE | SILICON-CARBIDE | WAFER-SCALE
Journal Article
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 08/2014, Volume 90, Issue 6
Twisted graphene layers produce a moire pattern (MP) structure with a predetermined wavelength for a given twist angle. However, predicting the membrane... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Physics - Mesoscale and Nanoscale Physics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2011, Volume 99, Issue 7, pp. 073506 - 073506-3
Electrical characteristics of Cr/Au and Ti/Au metal contacts on epitaxial graphene on 4H-SiC showed significant variations in resistance parameters at 300 K.... 
PHYSICS, APPLIED | INTERFACE | RAMAN-SPECTROSCOPY | SURFACES
Journal Article
Physical Review Letters, ISSN 0031-9007, 08/2013, Volume 111, Issue 7, p. 077402
We report on the polarization selection rules of inter-Landau-level transitions using reflection-type optical Hall effect measurements from 600 to 4000 cm(-1)... 
PHYSICS, MULTIDISCIPLINARY | Physics - Mesoscale and Nanoscale Physics
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 905 - 908
...Processing of Cavities in SiC Material for Quantum Technologies R.L. Myers-Ward1,a*, K.D. Horbart1, K.M. Daniels2†, A.J. Giles1, M.J. Tadjer1, L.E. Luna2, F.J... 
Si vacancies | Quantum technology | Epitaxy | Processing | Coherence length | Crystal defects | Point defects | Electron irradiation | Photonic crystals | Holes | Epitaxial growth
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 02/2014, Volume 241, pp. 8 - 12
Epitaxial graphene is promising material for future graphene-based applications including high frequency devices and chemical/biological sensors. Modifying the... 
Hall effect | Functionalization | Electrical characterization | Graphene | Plasma modification | RAMAN-SCATTERING | DEFECTS | PHYSICS, APPLIED | FILMS | MATERIALS SCIENCE, COATINGS & FILMS | RISE | Raman spectroscopy | Epitaxy | Graphite | Electrical properties | X-rays | Surface chemistry | High frequencies | Plasmas | Devices | Coatings
Journal Article
Surface Science, ISSN 0039-6028, 11/2013, Volume 617, pp. 113 - 117
Scanning tunneling microscopy (STM) images are obtained for the first time on few layer and twisted multilayer epitaxial graphene states synthesized on n+... 
Scanning tunneling microscopy | Silicon carbide | Moiré pattern | Twisted graphene | Twisted grapheme | BANDGAP | PHYSICS, CONDENSED MATTER | ATOMIC-STRUCTURE | TRANSPORT | EPITAXIAL GRAPHENE | Moire pattern | NANORIBBONS | GROWTH | CHEMISTRY, PHYSICAL | Graphene | Graphite | Multilayers | Dynamics | Images | Moire patterns | Bonding
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2010, Volume 96, Issue 16, pp. 162101 - 162101-3
Epitaxial graphene field effect transistors were fabricated, characterized, and studied. Both the capacitance and transport measurements were performed on the... 
TRANSISTORS | PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2012, Volume 100, Issue 19, pp. 193506 - 193506-4
Vertical diodes of epitaxial graphene on n − 4H-SiC were investigated. The graphene Raman spectra exhibited a higher intensity in the G-line than the 2D-line,... 
PHYSICS, APPLIED | FILMS | SCHOTTKY BARRIERS | SILICON | GROWTH
Journal Article