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physics, applied (13) 13
silicon (11) 11
materials science, multidisciplinary (10) 10
energy & fuels (8) 8
crystalline silicon (7) 7
defects (6) 6
solar cells (6) 6
lifetime spectroscopy (5) 5
degradation (4) 4
light-induced degradation (4) 4
materials science (4) 4
p-type (4) 4
photoluminescence (4) 4
silicium (4) 4
annealing (3) 3
boron (3) 3
carrier lifetime (3) 3
eisen (3) 3
impurities (3) 3
iron (3) 3
multicrystalline silicon (3) 3
passivation (3) 3
photovoltaic cells (3) 3
rekombination (3) 3
semiconductors (3) 3
silicon substrates (3) 3
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spektroskopie (3) 3
usage (3) 3
bor (2) 2
bulk lifetime (2) 2
crystals (2) 2
czochralski silicon (2) 2
defect parameters contour mapping (2) 2
directional solidification (2) 2
dpcm (2) 2
einfangquerschnitt (2) 2
electronic-properties (2) 2
energieniveau (2) 2
growth (2) 2
interstitial iron (2) 2
kristallwachstum (2) 2
mathematical models (2) 2
minority carriers (2) 2
monokristall (2) 2
optical properties (2) 2
parameters (2) 2
photovoltaik (2) 2
physics (2) 2
physics, condensed matter (2) 2
recombination centers (2) 2
regeneration (2) 2
sauerstoff (2) 2
shape (2) 2
silicon compounds (2) 2
solar energy (2) 2
solar energy industry (2) 2
solar-cells (2) 2
substrates (2) 2
thermal properties (2) 2
versetzungsdichte (2) 2
x-ray fluorescence (2) 2
a1. directional solidification (1) 1
a2. seed crystals (1) 1
absorption cross sections (1) 1
acceptor pairs (1) 1
amorphes silicium (1) 1
amorphous-silicon (1) 1
amorphous‐silicon (1) 1
analysis (1) 1
architecture and energy conservation (1) 1
b-o defects (1) 1
b2. semiconducting silicon (1) 1
b3. solar cells (1) 1
band theory (1) 1
barrier layers (1) 1
biodegradation (1) 1
block (1) 1
boron pairs (1) 1
boron-doping (1) 1
boron-oxygen (1) 1
capture cross sections (1) 1
carrier density (1) 1
carrier-induced degradation (1) 1
carriers (1) 1
characterization (1) 1
charge carrier lifetime (1) 1
chemical properties (1) 1
chemical reactions (1) 1
classical and quantum mechanics, general physics (1) 1
complex (1) 1
computer simulation (1) 1
contours (1) 1
cross sections (1) 1
crystal growth (1) 1
crystallography (1) 1
cz perc cells (1) 1
czochralski process (1) 1
czochralski-verfahren (1) 1
data analysis (1) 1
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Energy Procedia, ISSN 1876-6102, 09/2017, Volume 124, pp. 138 - 145
In this work, we are showing that iron (Fe) related defects in mono-silicon have very different recombination characteristics depending on the doping element... 
Lifetime Spectroscopy | Fe-contamination | Gallium-doping | Boron-doping | Indium-doping | DPCM
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 03/2017, Volume 25, Issue 3, pp. 209 - 217
Journal Article
physica status solidi (b), ISSN 0370-1972, 08/2018, Volume 255, Issue 8, pp. 1870130 - n/a
The correct identification of lifetime limiting impurities in silicon for photovoltaic application is often a problematic task, despite the many... 
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2013, Volume 113, Issue 19, p. 193707
In this paper, we present a new method for studying the light induced degradation process, in which the minority carrier density is monitored directly during... 
CRYSTALLINE SILICON | PHYSICS, APPLIED | Silicon compounds | Thermal properties | Measurement | Technology application | Usage | Optical properties | Photoluminescence | Simulation methods | Surface energy
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2017, Volume 122, Issue 8, p. 85703
Journal Article
physica status solidi (b), ISSN 0370-1972, 08/2018, Volume 255, Issue 8, pp. 1800082 - n/a
Temperature‐ and injection‐dependent lifetime spectroscopy (TIDLS) is extensively used for the characterization of defects in silicon material for photovoltaic... 
defect parameters contour mapping (DPCM) | lifetime spectroscopy | solar cells | semiconductors | defects | PHYSICS, CONDENSED MATTER | P-TYPE | TEMPERATURE | SILICON
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 08/2009, Volume 17, Issue 5, pp. 289 - 296
An investigation of impurities, crystal defects and microstructure has been performed on the edge zone, i.e. close to the crucible wall, which experiences... 
interstitial iron | edge zone | minority charge carrier lifetime | multicrystalline silicon | impurities | defects | Edge zone | Impurities | Multicrystalline silicon | Minority charge carrier lifetime | Interstitial iron | Defects | PHYSICS, APPLIED | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | IRON
Journal Article
physica status solidi (RRL) – Rapid Research Letters, ISSN 1862-6254, 07/2016, Volume 10, Issue 7, pp. 520 - 524
A demonstration that boron–oxygen related degradation in boron‐doped Czochralski silicon could be caused by a single defect with two trap energy levels is... 
silicon | boron | oxygen | light‐induced degradation | Czochralski process | defects | light-induced degradation | PHYSICS, CONDENSED MATTER | N-TYPE | PHYSICS, APPLIED | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | RECOMBINATION CENTERS | CRYSTALLINE SILICON | P-TYPE SILICON | Silicon | Biodegradation | Boron | Oxygen | Degradation | Annealing | Capture cross sections | Mathematical models | Defects
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2012, Volume 112, Issue 3, p. 33703
A new approach to investigate light induced degradation (LID) effects in boron-doped silicon has been developed. By studying spatial variations in LID... 
CRYSTALLINE SILICON | PHYSICS, APPLIED | BORON | Silicon compounds | Thermal properties | Usage | Semiconductors | Optical properties | Photoluminescence | Carriers | Degradation | Monitors | Silicon | Minority carriers | Diffusion | Carrier density | Defects
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 12/2017, Volume 173, pp. 25 - 32
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 10/2016, Volume 452, Issue C, pp. 272 - 275
Single crystal production of silicon for solar cell substrates has relied on the Dash neck technique developed more than 50 years ago. The technique is simple... 
A1. Directional solidification | B3. Solar cells | A2. Seed crystals | B2. Semiconducting silicon | Solar cells | PHYSICS, APPLIED | Directional solidification | Seed crystals | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | CRYSTALS | Semiconducting silicon | CRYSTALLOGRAPHY | EMISSIVITY | Solar energy industry | Silicon
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 03/2017, Volume 25, Issue 3, pp. 209 - 217
Journal Article
IEEE Journal of Photovoltaics, ISSN 2156-3381, 10/2013, Volume 3, Issue 4, pp. 1265 - 1270
Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by... 
Degradation | Boron | reaction kinetics | Czochralski silicon (Cz-Si) | Silicon | Kinetic theory | light-induced degradation (LID) | Charge carrier lifetime | minority carrier lifetime | B-O defects | rate equations | PHYSICS, APPLIED | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | CRYSTALLINE SILICON
Journal Article
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 06/2017, pp. 1 - 4
Conference Proceeding
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