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ECS Transactions, ISSN 1938-6737, 08/2017, Volume 80, Issue 1, pp. 365 - 371
Journal Article
ECS Transactions, ISSN 1938-6737, 05/2017, Volume 79, Issue 1, pp. 131 - 138
Journal Article
ECS Transactions, ISSN 1938-5862, 2017, Volume 79, Issue 1, pp. 131 - 138
Conference Proceeding
ECS Transactions, ISSN 1938-6737, 2017, Volume 80, Issue 1, pp. 365 - 371
Conference Proceeding
AIP Advances, ISSN 2158-3226, 04/2019, Volume 9, Issue 4, pp. 45019 - 045019-7
Liquid ethylcyclopentadienyl indium (InEtCp) was synthesized, and this compound exhibited superior characteristics, including a relatively high vapor pressure... 
Thin films | Plasma | Nucleation | Vapor pressure | Atomic layer deposition | Oxidants | Precursors | Oxidizing agents | Oxidation | Indium oxides | Thermal stability
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 09/2019, Volume 58, Issue 9, p. 90506
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2014, Volume 104, Issue 10, p. 102103
Incorporating SiO2 into amorphous In2O3-based thin films is found to suppress the formation of unstable oxygen vacancies. The SiO2 incorporated thin film... 
PHYSICS, APPLIED | OXIDE SEMICONDUCTORS | STABILITY | ELECTRICAL-PROPERTIES | SILICON | Current carriers | Thermal stress | Conduction bands | Vacancies | Semiconductor devices | Thin film transistors | Indium oxides | Transistors | Sputtering | Silicon dioxide
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 07/2019, Volume 215, p. 111013
We investigated the characteristics of 10-nm-thick ferroelectric Hf Zr O (HZO) thin films fabricated using plasma-enhanced atomic layer deposition (PE-ALD) at... 
High-k material | Low temperature fabrication process | Ferroelectric HfxZr1-xO2 thin film | Plasma-enhanced atomic layer deposition | Thin films | Crystal growth | Annealing | Nanocrystals | Ferroelectricity | Phases | Ferroelectric materials | Atomic layer deposition | Metallizing | Electric fields | Low temperature
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2013, Volume 103, Issue 17, p. 172105
Amorphous metal oxide thin-film transistors (TFTs) are fabricated using InOx-based semiconductors doped with TiO2, WO3, or SiO2. Even at low-dopant densities,... 
GA-ZN-O | ROOM-TEMPERATURE | PHYSICS, APPLIED | TFTS | CARRIER TRANSPORT | HIGH-MOBILITY | CRYSTALLINE | Physics - Materials Science
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2014, Volume 104, Issue 15, p. 152103
Journal Article
AIP Advances, ISSN 2158-3226, 08/2019, Volume 9, Issue 8, pp. 85319 - 085319-5
Interfaces in Al2O3/n-GaN capacitors fabricated on free-standing GaN substrates were investigated using sub-bandgap photo-assisted capacitance-voltage... 
NANOSCIENCE & NANOTECHNOLOGY | DEFECTS | PHYSICS, APPLIED | SEMICONDUCTOR | OXIDES | MATERIALS SCIENCE, MULTIDISCIPLINARY | Metal oxides | Conduction bands | Electrical measurement | Energy gap | Gallium nitrides | Metallizing | Capacitance | Interfacial properties | Valence band | Substrates | Aluminum oxide
Journal Article
SCIENTIFIC REPORTS, ISSN 2045-2322, 02/2019, Volume 9, Issue 1, pp. 2757 - 7
We have found a memristive characteristic of an alpha-GTO thin-film device. The alpha-GTO thin-film layer is deposited using radio-frequency (RF) magnetron... 
ROOM-TEMPERATURE FABRICATION | MULTIDISCIPLINARY SCIENCES | OXIDE | Electrodes
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2019, Volume 115, Issue 17
The Mg doping efficiency is found to be drastically enhanced in the p-GaN films grown on the free-standing GaN substrates by metal organic chemical vapor... 
Semiconductor devices | Gallium nitrides | Field effect transistors | Doping | Metalorganic chemical vapor deposition | Luminescence | Photoluminescence | Substrates | Dislocations | Metal oxides | Organic chemistry | Efficiency | Magnesium | Organic chemicals | Self compensation
Journal Article
CrystEngComm, 12/2018, Volume 2, Issue 48, pp. 7761 - 7765
We have investigated the crystal quality of a 4-inch GaN wafer by X-ray diffraction topography. GaN (112&cmb.macr;4) diffraction images at various incident... 
X-ray diffraction | Histograms | Bowing | Topography | Image reconstruction | Crystals
Journal Article
CrystEngComm, 7/2019, Volume 21, Issue 27, pp. 436 - 441
We have observed anisotropic mosaicity of an m -plane GaN homoepitaxial layer by X-ray diffraction topography imaging over a wafer and X-ray rocking curves... 
Domains | X-ray diffraction | X ray imagery | Twisting | Anisotropy | Image reconstruction
Journal Article
CRYSTENGCOMM, ISSN 1466-8033, 4/2019, Volume 21, Issue 14, pp. 2281 - 2285
We have studied the lattice-plane modulation of Mg-doped GaN homoepitaxial layers by X-ray diffraction topography. X-ray rocking curve images and full-width at... 
DISLOCATIONS | CRYSTAL | CRYSTALLOGRAPHY | STRAIN | CHEMISTRY, MULTIDISCIPLINARY | GROWTH | Fourier transforms | Modulation | Topography | Doping | Images | X-ray diffraction | Magnesium | Dislocations
Journal Article
Scientific Reports, ISSN 2045-2322, 08/2016, Volume 6, Issue 1, p. 32123
From visible to mid-infrared frequencies, molecular sensing has been a major successful application of plasmonics because of the enormous enhancement of the... 
TERAHERTZ METAMATERIALS | MULTIDISCIPLINARY SCIENCES | MONOLAYERS | SILVER ELECTRODE | Absorption spectroscopy | Vibrations | Bovine serum albumin | Rhodamine | Enzymes | Spectroscopy | Spectrum analysis | Rhodamine 6G
Journal Article
Thin Solid Films, ISSN 0040-6090, 06/2018, Volume 655, pp. 48 - 53
The influence of amorphous high- interlayers, such as Al O , (Ta/Nb)O (TN), and (Ta/Nb)O -Al O (TNA), on the leakage current ( ) and dielectric constant ( )... 
High-k material | ZrO2 | (Ta/Nb)Ox | Dynamic random access memory (DRAM) | Metal-insulator-metal capacitor | Al2O3 | Atomic layer deposition (ALD) | ZrO | (Ta/Nb)O
Journal Article
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