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Chinese Semiotic Studies, ISSN 2198-9605, 08/2017, Volume 13, Issue 3, pp. 255 - 267
This paper takes as a starting point the age-long debate over the formidable divide between Chinese and Indo-European languages, a widely endorsed standpoint... 
semiotic solution | Chinese linguistics | contrastive analysis
Journal Article
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), ISSN 0302-9743, 2015, Volume 9388, pp. 145 - 154
Journal Article
复旦人文社会科学论丛:英文版, ISSN 1674-0750, 2016, Volume 9, Issue 4, pp. 695 - 702
The volume under review takes niche as an overarching framework within which a variety of discoveries on practices by non-native English speakers in the... 
EAL | 语言 | 国际学术交流 | 跨文化 | 学术流派 | 英语 | 谈判 | 国际学术界
Journal Article
Applied physics letters, ISSN 1077-3118, 2012, Volume 100, Issue 3, pp. 031105 - 031105-5
We studied the influence of a tapered AlGaN electron blocking layer (EBL) with step-graded aluminum composition on hole injection and electron overflow effects... 
BAND PARAMETERS | PHYSICS, APPLIED | MODEL | SIMULATION
Journal Article
复旦人文社会科学论丛:英文版, ISSN 1674-0750, 2015, Volume 8, Issue 3, pp. 487 - 500
This paper critically reviews a comprehensive and detailed philosophical account of the plausibility and practicability of artificial intelligence (AI), an... 
挑战性 | 出版社 | ISBN | 哲学基础 | 语言游戏 | 维特根斯坦 | 人工智能
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2011, Volume 109, Issue 7, pp. 073106 - 073106-5
Prestrained InGaN layers with different indium composition were grown by metalorganic chemical vapor deposition as an interlayer before the growth of InGaN/GaN... 
LIGHT-EMITTING-DIODES | X-RAY-DIFFRACTION | PHYSICS, APPLIED | NANOSTRUCTURES | Diffraction | Gallium arsenide | Quantum wells | Analysis | X-rays | Indium | Electric properties
Journal Article
Journal of physical chemistry. C, ISSN 1932-7447, 04/2019, Volume 123, Issue 14, pp. 8865 - 8870
The characteristics of vacancy-type point defects near the surface and inside the AlGaN films were studied by positron annihilation spectroscopy (PAS) and... 
CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | VACANCY-TYPE DEFECTS | GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
Journal of Luminescence, ISSN 0022-2313, 06/2019, Volume 210, pp. 169 - 174
Radiation effects of 10 MeV electrons on blue-lighting InGaN/GaN multiple quantum wells (MQWs) and ultraviolet-lighting GaN/AlGaN MQWs were investigated and... 
Radiation effect | Exciton localization energy | GaN/AlGaN | Non-radiation recombination centers | InGaN/GaN | Internal quantum efficiency | PHOTOLUMINESCENCE | OPTICS | Comparative analysis | Hardness | Quantum wells | Electrons
Journal Article
English today, ISSN 0266-0784, 08/2020, pp. 1 - 3
In their article, ‘Back to basics’, Zhou and Zha critique a ‘disheartening picture’ they found in my paper ‘The English major crisis in China’ (2019) and... 
Journal Article
Lecture Notes in Artificial Intelligence (Subseries of Lecture Notes in Computer Science), ISSN 0302-9743, 2015, Volume 8992, pp. 130 - 141
Conference Proceeding
Clinical Breast Cancer, ISSN 1526-8209, 2015, Volume 15, Issue 2, pp. e147 - e154
Journal Article
English today, ISSN 0266-0784, 10/2019, pp. 1 - 9
Any news on English education in China today is now no news, but this most recent one may offer us some fresh food for thought. 
Journal Article
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), ISSN 0302-9743, 2015, Volume 9513, pp. 60 - 71
Conference Proceeding
Corpora, ISSN 1749-5032, 04/2018, Volume 13, Issue 1, pp. 125 - 128
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2009, Volume 95, Issue 21, pp. 211104 - 211104-3
Spontaneous emission property of an asymmetrically graded 480 nm InGaN/GaN quantum well (QW) is investigated via k ⋅ p theory. Comparing to rectangular QW,... 
gallium compounds | PHYSICS, APPLIED | LASERS | SEMICONDUCTORS | indium compounds | INN | carrier density | light emitting diodes | semiconductor quantum wells | WURTZITE GAN | spontaneous emission | OPTICAL GAIN | wide band gap semiconductors | POLARIZATION | NITRIDES | III-V semiconductors
Journal Article
Fudan journal of the humanities and social sciences, ISSN 1674-0750, 04/2017
Journal Article
IEEE transactions on nuclear science, ISSN 1558-1578, 2018, Volume 65, Issue 11, pp. 2784 - 2792
Journal Article
by He, CG and Zhao, W and Wu, HL and Liu, NY and Zhang, S and Li, JZ and Jia, CY and Zhang, K and He, LF and Chen, ZT and Shen, B
Journal of physics. D, Applied physics, ISSN 0022-3727, 09/2020, Volume 53, Issue 40, p. 405303
Recently, there have been increasing demands for high-quality AlN/sapphire templates due to their applications in deep ultraviolet light-emitting diodes (DUV... 
SAPPHIRE | PHYSICS, APPLIED | MECHANISM | thick AlN film | mismatch stress | STRAIN RELAXATION | nano-voids | MOCVD | HIGH-QUALITY ALN | ALGAN
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2012, Volume 112, Issue 8, p. 83101
Three dual-wavelength InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs) with increasing indium content are grown by metal-organic chemical... 
EXCITON LOCALIZATION | EPITAXY | PHYSICS, APPLIED | MULTIQUANTUM-WELL | BLUE | SEMICONDUCTORS | PERFORMANCE | Thermal properties | Usage | Optical properties | Quantum wells | Wave functions | Indium | Light-emitting diodes | Gallium compounds | Carriers | Polarization | Wavelengths | Indium gallium nitrides | Gallium nitrides | Emission
Journal Article
Jpn J Appl Phys, ISSN 0021-4922, 7/2012, Volume 51, Issue 7, pp. 071001 - 071001-4
This is a report on parallel and perpendicular hole transport characteristics of Mg-doped Al x Ga 1-x N/GaN superlattices (SLs). For parallel transport, the... 
INSERTION | PHYSICS, APPLIED | MODEL | CHEMICAL-VAPOR-DEPOSITION | SEMICONDUCTORS
Journal Article
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