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Scientific reports, 09/2016, Volume 6, p. 34294
Niobium dioxide can exhibit negative differential resistance (NDR) in metal-insulator-metal (MIM) devices, which has recently attracted significant interest... 
Journal Article
Nature communications, 09/2017, Volume 8, Issue 1, p. 658
Negative differential resistance behavior in oxide memristors, especially those using NbO , is gaining renewed interest because of its potential utility in... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 103102
The integration of nonlinear current-voltage selectors and bi-stable memristors is a paramount step for reliable operation of crossbar arrays. In this paper,... 
MEMORIES | PHYSICS, APPLIED | FILMS | SWITCHING MECHANISM | THIN
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 11/2012, Volume 51, Issue 11S, p. 11
Journal Article
Energy Conversion and Management, ISSN 0196-8904, 05/2015, Volume 96, pp. 100 - 104
We present the fabrication and characterization of single, double, and quadruple stacked flexible silicon nanowire network based thermoelectric modules. From... 
Nanowire network | Silicon | Copper substrate | TiN nucleation layer | Plasma Enhanced Chemical Vapor Deposition (PECVD) | Deposition (PECVD) | Plasma enhanced chemical vapor | GENERATOR | ENERGY & FUELS | POWER | PHYSICS, NUCLEAR | THERMAL-CONDUCTIVITY | HEAT | MECHANICS | THERMODYNAMICS | DEVICES | Networks | Stacking | Modules | P-type semiconductors | Nanowires | Thermoelectricity | Supplying
Journal Article
Scientific Reports, ISSN 2045-2322, 09/2016, Volume 6, Issue 1, p. 34294
Niobium dioxide can exhibit negative differential resistance (NDR) in metal-insulator-metal (MIM) devices, which has recently attracted significant interest... 
VO2 | MULTIDISCIPLINARY SCIENCES | TRANSITIONS | Spectroscopy | Films | Temperature effects | Circuits | Crystallization | Alloys | Silicon | Silicon dioxide
Journal Article
Applied Physics A, ISSN 0947-8396, 10/2012, Volume 109, Issue 1, pp. 1 - 4
We demonstrate a promising new material system for ionic resistive switches: nitride memristors. The switching material is an AlN film, deposited using atomic... 
Condensed Matter Physics | Operating Procedures, Materials Treatment | Optical and Electronic Materials | Characterization and Evaluation of Materials | Surfaces and Interfaces, Thin Films | Physics | Nanotechnology | POINT-DEFECTS | OXYGEN | PHYSICS, APPLIED | ALN | MECHANISM | AIN | MATERIALS SCIENCE, MULTIDISCIPLINARY | NONVOLATILE MEMORY | LAYER | BAND-GAP
Journal Article
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 9/2013, Volume 8820, pp. 88200Q - 88200Q-6
The ability to make a good electrical/thermal contact to a large area filled with semiconductor nanowires has been a major engineering challenge in developing... 
metal organic chemical vapor deposition | semiconductor on metal | Top contact | vertical and horizontal growth | Networks | Semiconductors | Electric contacts | Indium phosphides | Nanowires | Devices | Thermoelectricity | Contact
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 9/2013, Volume 8820, pp. 882013 - 882013-7
The growth of silicon core-shell nanowires with a crystalline-core and a polycrystalline-shell on copper substrates pretreated with carbon via Plasma Enhanced... 
copper | metal organic chemical vapor deposition | thermoelectric | flexible | Graphene | CHEMICAL VAPOR DEPOSITION | PARTICLES | DEPOSITION | Silicon substrates | CRYSTAL STRUCTURE | Carbon | Thermoelectricity | Contact | MICROWIRE | Plasma enhanced chemical vapor deposition | Nanowires | Copper | VAPOR DEPOSITION
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 9/2013, Volume 8820, pp. 882012 - 882012-6
Indium phosphide (InP) nanowire networks coated with gold were characterized by Raman spectroscopy. First, InP nanowire networks were grown via metal organic... 
Networks | Gold | Indium phosphides | Phonons | Coating | Nanowires | Raman spectroscopy | Deposition
Conference Proceeding
Nanotechnology, ISSN 0957-4484, 04/2014, Volume 25, Issue 15, pp. 155302 - 6
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 9/2013, Volume 8820, pp. 88200L - 88200L-8
Semiconductor-oxide nanostructure devices can be a very intriguing material platform if optoelectronic properties of the original semiconductor nanostructures... 
photoluminescence | blue shift | Burstein-Moss shift | ALD | aluminum oxide | indium phosphide | MOCVD | nanowire | Blue shift | Networks | Wavelengths | Semiconductors | Oxide coatings | Spectra | Nanowires | Aluminum oxide
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 9/2016, Volume 9924, pp. 99240I - 99240I-5
Memristive devices are two-terminal electrical switches with electrical resistance that depends on a state variable equivalent to electrical charge. In... 
electroforming | selector | memristor | self-Assembly
Conference Proceeding
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